Cypress CY62256VNLL-70ZRXI 256k (32k x 8) static ram Datasheet

CY62256VN
256K (32K x 8) Static RAM
Features
Functional Description
■
Temperature Ranges
❐ Commercial: 0°C to 70°C
❐ Industrial: –40°C to 85°C
❐ Automotive-A: –40°C to 85°C
❐ Automotive-E: –40°C to 125°C
The CY62256VN[1] family is composed of two high performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and tristate drivers.
These devices have an automatic power down feature, reducing
the power consumption by over 99% when deselected.
■
Speed: 70 ns
■
Low Voltage Range: 2.7V to 3.6V
■
Low Active Power and Standby Power
■
Easy Memory Expansion with CE and OE Features
■
TTL Compatible Inputs and Outputs
■
Automatic Power Down when Deselected
■
CMOS for Optimum Speed and Power
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O0 through I/O7) is written into the memory location addressed
by the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
■
Available in Standard Pb-free and non Pb-free 28-Pin (300-mil)
Narrow SOIC, 28-Pin TSOP-I, and 28-Pin Reverse TSOP-I
Packages
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH.
Logic Block Diagram
I/O0
INPUTBUFFER
I/O1
32K x 8
ARRAY
I/O2
SENSE AMPS
ROW DECODER
A10
A9
A8
A7
A6
A5
A4
A3
A2
I/O3
I/O4
I/O5
CE
WE
COLUMN
DECODER
I/O6
POWER
DOWN
I/O7
A12
A11
A1
A0
A13
A14
OE
.
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06512 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 25, 2009
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CY62256VN
Product Portfolio
Product
Power Dissipation
VCC Range (V)
Range
Min
Typ[2]
Max
Operating, ICC (mA)
Standby, ISB2 (μA)
Typ[2]
Typ[2]
Max
Max
CY62256VNLL
Com’l
2.7
3.0
3.6
11
30
0.1
5
CY62256VNLL
Ind’l
2.7
3.0
3.6
11
30
0.1
10
CY62256VNLL
Automotive-A
2.7
3.0
3.6
11
30
0.1
10
CY62256VNLL
Automotive-E
2.7
3.0
3.6
11
30
0.1
130
Pin Configurations
Narrow SOIC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
VCC
WE
A4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
OE
A1
A2
A3
A4
WE
VCC
A5
A6
A7
A8
A9
A10
A11
21
22
23
24
25
26
27
28
1
2
3
4
5
6
7
TSOP I
Top View
(not to scale)
20
19
18
17
16
15
14
13
12
11
10
9
8
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
VCC
WE
A4
A3
A2
A1
OE
7
6
8
9
5
4
3
2
10
11
12
13
14
15
16
17
18
1
28
27
26
25
24
23
22
TSOP I
Reverse Pinout
Top View
(not to scale)
19
20
21
A12
A13
A14
I/O0
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A0
Pin Definitions
Pin Number
Type
Description
1–10, 21, 23–26 Input
A0–A14. Address Inputs
11–13, 15–19
Input/Output
I/O0–I/O7. Data lines. Used as input or output lines depending on operation
27
Input/Control
WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted
20
Input/Control
CE. When LOW, selects the chip. When HIGH, deselects the chip
22
Input/Control
OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins
14
Ground
GND. Ground for the device
28
Power Supply
VCC. Power supply for the device
Note
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25°C, and tAA = 70 ns.
Document #: 001-06512 Rev. *B
Page 2 of 13
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CY62256VN
Maximum Ratings
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Latch-up Current.................................................... > 200 mA
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)...........................................–0.5V to + 4.6V
Operating Range
Device
Range
CY62256VN Commercial
Ambient
Temperature
(TA)[4]
VCC
0°C to +70°C
2.7V to 3.6V
−40°C to +85°C
Industrial
DC Voltage Applied to Outputs
in High-Z State[3] .................................... –0.5V to VCC + 0.5V
Automotive-A
−40°C to +85°C
DC Input Voltage[3] ................................ –0.5V to VCC + 0.5V
Automotive-E
−40°C to +125°C
Output Current into Outputs (LOW) ............................. 20 mA
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
IOH = −1.0 mA
VCC = 2.7V
VOL
Output LOW Voltage
IOL = 2.1 mA
VCC = 2.7V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IIX
Input Leakage Current
GND < VIN < VCC
-70
Min
Typ[2]
Max
2.4
Unit
V
0.4
V
2.2
VCC + 0.3V
V
–0.5
0.8
V
Com’l/Ind’l/Auto-A
–1
+1
μA
Auto-E
–10
+10
μA
+1
μA
IOZ
Output Leakage Current
GND < VIN < VCC, Output
Disabled
Com’l/Ind’l/Auto-A
–1
Auto-E
–10
ICC
VCC Operating Supply
Current
VCC = 3.6V, IOUT = 0 mA,
f = fMAX = 1/tRC
All Ranges
ISB1
Automatic CE Power
Down Current TTL Inputs
ISB2
Automatic CE Power
Down Current- CMOS
Inputs
+10
μA
11
30
mA
VCC = 3.6V, CE > VIH,
All Ranges
VIN > VIH or VIN < VIL, f = fMAX
100
300
μA
VCC = 3.6V, CE > VCC – 0.3V Com’l
VIN > VCC – 0.3V or VIN < 0.3V,
Ind’l/Auto-A
f=0
Auto-E
0.1
5
μA
10
130
Notes
3. VIL (min) = –2.0V for pulse durations of less than 20 ns.
4. TA is the “Instant-On” case temperature.
Document #: 001-06512 Rev. *B
Page 3 of 13
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CY62256VN
Capacitance[5]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 3.0V
Max
Unit
6
pF
8
pF
Thermal Resistance[5]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
SOIC
TSOPI
RTSOPI
Unit
68.45
87.62
87.62
°C/W
26.94
23.73
23.73
°C/W
Figure 1. AC Test Loads and Waveforms
R1
VCC
ALL INPUT PULSES
OUTPUT
VCC
10%
R2
50 pF
90%
10%
90%
GND
< 5 ns
< 5 ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
THÉVENIN EQUIVALENT
Rth
OUTPUT
Parameter
R1
R2
RTH
VTH
Vth
Value
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics (Over the Operating Range)
Parameter
Conditions[6]
Description
VDR
VCC for Data Retention
ICCDR
Data Retention Current
Min
Typ[2]
Max
1.4
VCC = 1.4V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V
or VIN < 0.3V
tCDR[6]
Chip Deselect to Data
Retention Time
tR[5]
Operation Recovery Time
Com’l
V
0.1
Ind’l/Auto-A
Unit
μA
3
6
Auto-E
50
0
ns
tRC
ns
Figure 2. Data Retention Waveform
DATA RETENTION MODE
VCC
1.8V
VDR > 1.4V
tCDR
1.8V
tR
CE
Notes
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed VCC + 0.3V.
Document #: 001-06512 Rev. *B
Page 4 of 13
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CY62256VN
Switching Characteristics Over the Operating Range[7]
Parameter
Description
CY62256VN-70
Min
Max
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tDOE
OE LOW to Data Valid
tLZOE
OE LOW to Low-Z[8]
tHZOE
OE HIGH to High-Z[8, 9]
CE LOW to
Low-Z[8]
tHZCE
CE HIGH to
High-Z[8, 9]
tPU
CE LOW to Power Up
tLZCE
ns
70
10
ns
ns
70
35
5
ns
ns
ns
25
10
ns
ns
25
0
CE HIGH to Power Down
tPD
Write Cycle
70
ns
ns
70
ns
[10, 11]
tWC
Write Cycle Time
70
ns
tSCE
CE LOW to Write End
60
ns
tAW
Address Setup to Write End
60
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Setup to Write Start
0
ns
tPWE
WE Pulse Width
50
ns
tSD
Data Setup to Write End
30
ns
tHD
Data Hold from Write End
0
ns
High-Z[8, 9]
tHZWE
WE LOW to
tLZWE
WE HIGH to Low-Z[8]
25
10
ns
ns
Notes
7. Test conditions assume signal transition time of 5 ns or less timing reference levels of VCC/2, input pulse levels of 0 to VCC, and output loading of the specified IOL/IOH
and 100-pF load capacitance.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 001-06512 Rev. *B
Page 5 of 13
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CY62256VN
Switching Waveforms
Figure 3. Read Cycle No. 1[12, 13]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Figure 4. Read Cycle No. 2[13, 14]
t RC
CE
tACE
OE
t HZOE
tHZCE
tDOE
DATA OUT
t LZOE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
t PD
t PU
ICC
50%
50%
ISB
Figure 5. Write Cycle No. 1 (WE Controlled)[10, 15, 16]
tWC
ADDRESS
CE
tAW
tSA
WE
tHA
t PWE
OE
tSD
DATA I/O
NOTE 17
tHD
DATAINVALID
t HZOE
Notes
12. Device is continuously selected. OE, CE = VIL.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
15. Data I/O is high impedance if OE = VIH.
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state.
17. During this period, the I/Os are in output state and input signals should not be applied.
Document #: 001-06512 Rev. *B
Page 6 of 13
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CY62256VN
Switching Waveforms (continued)
Figure 6. Write Cycle No. 2 (CE Controlled)[10, 15, 16]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
WE
tSD
DATA I/O
t HD
DATAINVALID
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW)[11, 16]
tWC
ADDRESS
CE
tAW
t HA
tSA
WE
tSD
DATA I/O
NOTE 17
t HZWE
Document #: 001-06512 Rev. *B
t HD
DATA INVALID
tLZWE
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CY62256VN
Typical DC and AC Characteristics
1.4
1.6
1.4
1.2
2.5
1.0
2.0
TA= 25°C
0.4
0.2
0.0
0.0
−55
3.6
3.2
2.8
2.4
2.0
1.8
1.6
0.5
25
125
2.5
1.6
2.0
1.4
NORMALIZED tAA
VCC = 3.0V
TA = 25°C
1.0
0.0
1.65
1.2
1.0
0.8
0.5
2.1
2.6
3.1
3.6
0.6
−55
25
125
AMBIENT TEMPERATURE (°C)
OUTPUT SOURCE CURRENT (mA)
SUPPLY VOLTAGE (V)
3.
3V
25
105
AMBIENT TEMPERATURE (°C)
NORMALIZED ACCESS TIME
vs. AMBIENT TEMPERATURE
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
ISB
–0.5
−55
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
1.5
1.0
0.4
OUTPUT SINK CURRENT (mA)
0.6
0.6
1.5
=
0.8
0.8
cc
1.0
V
1.2
3.0
VCC = 3.0V
ISB2 μA
NORMALIZED ICC
NORMALIZED ICC
1.8
0.2
NORMALIZED tAA
STANDBY CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED SUPPLY CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
OUTPUT SINK CURRENT
14 vs. OUTPUT VOLTAGE
12
10
8
6
4
TA = 25°C
2
0
0.0
1.0
2.0
3.0
OUTPUT VOLTAGE (V)
OUTPUT SOURCE CURRENT
vs. OUTPUT VOLTAGE
–14
–12
–10
–8
–6
TA = 25°C
–4
0
0.0
0.5
1.0
1.5
2
2.5
OUTPUT VOLTAGE (V)
Document #: 001-06512 Rev. *B
Page 8 of 13
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CY62256VN
Typical DC and AC Characteristics
(continued)
TYPICAL ACCESS TIME CHANGE
vs. OUTPUT LOADING
NORMALIZED ICC vs. CYCLE TIME
1.25
NORMALIZED ICC
DELTA tAA (ns)
30.0
25.0 T = 25°C
A
VCC = 3V
20.0
15.0
10.0
VCC = 3.0V
1.00
TA = 25°C
VIN = 0.5V
0.75
5.0
0.0
0
200
400
600
0.50
1
800 1000
20
10
30
CYCLE FREQUENCY (MHz)
CAPACITANCE (pF)
Truth Table
CE
WE
OE
H
X
X
High-Z
Inputs/Outputs
Deselect/Power Down
Mode
Standby (ISB)
Power
L
H
L
Data Out
Read
Active (ICC)
L
L
X
Data In
Write
Active (ICC)
L
H
H
High-Z
Deselect, Output Disabled
Active (ICC)
Ordering Information
Speed
(ns)
70
Ordering Code
CY62256VNLL-70SNC
Package
Diagram
51-85092
28-Pin (300-mil) Narrow SOIC
51-85071
28-Pin TSOP I
CY62256VNLL-70SNXC
CY62256VNLL-70ZC
Package Type
Commercial
28-Pin (300-mil) Narrow SOIC (Pb-Free)
CY62256VNLL-70ZXC
28-Pin TSOP I (Pb-Free)
CY62256VNLL-70SNXI
51-85092
28-Pin (300-mil) Narrow SOIC (Pb-Free)
CY62256VNLL-70ZI
51-85071
28-Pin TSOP I
CY62256VNLL-70ZXI
CY62256VNLL-70ZRI
Operating
Range
Industrial
28-Pin TSOP I (Pb-Free)
51-85074
CY62256VNLL-70ZRXI
28-Pin Reverse TSOP I
28-Pin Reverse TSOP I (Pb-Free)
CY62256VNLL-70ZXA
51-85071
28-Pin TSOP I (Pb-Free)
Automotive-A
CY62256VNLL-70SNXE
51-85092
28-Pin (300-mil) Narrow SOIC (Pb-Free)
Automotive-E
CY62256VNLL-70ZXE
51-85071
28-Pin TSOP I (Pb-Free)
CY62256VNLL-70ZRXE
51-85074
28-Pin Reverse TSOP I (Pb-Free)
Contact your local Cypress sales representative for availability of other parts
Document #: 001-06512 Rev. *B
Page 9 of 13
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CY62256VN
Package Diagrams
Figure 8. 28-Pin (300-mil) SNC (Narrow Body) (51-85092)
51-85092-*B
Document #: 001-06512 Rev. *B
Page 10 of 13
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CY62256VN
Figure 9. 28-Pin TSOP 1 (8 × 13.4 mm) (51-85071)
51-85071-*G
Document #: 001-06512 Rev. *B
Page 11 of 13
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CY62256VN
Figure 10. 28-Pin Reverse TSOP 1 (8 × 13.4 mm) (51-85074)
51-85074-*F
Document #: 001-06512 Rev. *B
Page 12 of 13
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CY62256VN
Document History Page
Document Title: CY62256VN 256K (32K x 8) Static RAM
Document Number: 001-06512
Rev.
ECN No.
Submission
Date
Orig. of
Change
**
426504
See ECN
NXR
New Data Sheet
*A
488954
See ECN
NXR
Added Automotive product
Updated ordering Information table
*B
2769239
09/25/09
Description of Change
VKN/AESA Corrected VIL description in the Electrical Characteristics table
Sales, Solutions, and Legal Information
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© Cypress Semiconductor Corporation, 2006-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-06512 Rev. *B
Revised September 25, 2009
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