AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issue Issue Date June.2014 0 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION Fast access time : 10ns Low power consumption: Operating current: 90mA (TYP.) Standby current: 4mA (TYP.) Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage: 1.5V (MIN.) All parts ROHS Compliant Package : 44-pin 400mil TSOP-II 48-ball 6mm x 8mm TFBGA The AS7C316096C is a 16M-bit high speed CMOS static random access memory organized as 2048K words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS7C316096C operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible Table 1. Speed Grade Information Product Family AS7C316096C VCC Range Speed 2.7 ~ 3.6V 10ns Power Dissipation Standby(ISB1,TYP.) Operating(ICC,TYP.) 4mA 90mA Table 2. Ordering Information Product part No Org Temperature Package AS7C316096C-10TIN 2048K x 8 Industrial -40°C to 85°C 44-pin 400mil TSOP-II AS7C316096C-10BIN 2048K x 8 Industrial -40°C to 85°C 48-ball 6mm x 8mm TFBGA Confidential 1 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A20 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT Confidential 2048Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A20 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground COLUMN I/O 2 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 PIN CONFIGURATION 1 44 NC NC 2 43 NC A0 3 42 A20 A1 4 41 A18 A2 5 40 A17 A3 6 39 A16 A4 7 38 A15 CE# 8 37 OE# DQ0 9 36 DQ7 DQ1 10 35 DQ6 VCC 11 34 VSS VSS 12 33 VCC DQ2 13 32 DQ5 DQ3 14 31 DQ4 WE# 15 A5 16 A6 17 A7 18 AS7C316096C XXX XXXX XXXXXXXXX NC 30 A14 29 A13 28 A12 27 A11 A8 19 26 A10 A9 20 25 A19 NC 21 24 NC NC 22 23 NC TSOP-II A NC OE# A0 A1 B NC NC A3 A4 CE# DQ0 C NC NC A5 A6 DQ1 DQ2 D Vss NC A17 A7 DQ3 Vcc E Vcc NC NC A16 DQ4 Vss F NC NC A14 A15 DQ5 DQ6 G NC A20 A12 A13 WE# DQ7 H A18 A8 A9 A10 A2 A19 1 2 3 4 5 6 TFBGA(See through with Top View) Confidential AS7C316096C XXX XXXX XXXXXXXXX A11 NC TFBGA(Top View) 3 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 RATING -0.5 to 4.6 -0.5 to VCC+0.5 UNIT V V TA -40 to 85(I grade) ℃ TSTG PD IOUT -65 to 150 1 50 ℃ Operating Temperature Storage Temperature Power Dissipation DC Output Current W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L SUPPLY CURRENT ISB1 ICC ICC ICC I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS PARAMETER Supply Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Average Operating Power Supply Current Standby Power Supply Current SYMBOL TEST CONDITION VCC *1 VIH *2 VIL ILI VCC ≧ VIN ≧ VSS VCC ≧ VOUT ≧ VSS, ILO Output Disabled VOH IOH = -4mA VOL IOL = 8mA CE# ≦0.2, ICC Others at 0.2V or Vcc-0.2V II/O = 0mA;f=max CE# ≧VCC - 0.2V, ISB1 Others at 0.2V or VCC - 0.2V MIN. 2.7 2.2 - 0.3 -1 TYP. 3.3 - *4 MAX. 3.6 VCC+0.3 0.8 1 UNIT V V V µA -1 - 1 µA 2.4 - - 0.4 V V 90 120 mA 4 40 mA - Notes: 1. VIH(max) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(min) = VSS - 2.0V for pulse width less than 6ns. 3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ Confidential 4 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 8 10 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Speed Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 10ns 0.2V to VCC - 0.2V 3ns VCC/2 CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change AS7C316096C-10 MIN. MAX. 10 10 10 4.5 2 0 4 4 2 - SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH UNIT ns ns ns ns ns ns ns ns ns (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z AS7C316096C-10 MIN. MAX. 10 8 8 0 8 0 6 0 2 4 SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW * tWHZ* UNIT ns ns ns ns ns ns ns ns ns ns *These parameters are guaranteed by device characterization, but not production tested. Confidential 5 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Confidential 6 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.WE#,CE#, LB#, UB# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Confidential 7 Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL TEST CONDITION VDR CE# ≧ VCC - 0.2V VCC = 1.5V IDR CE# ≧ VCC - 0.2V Others at 0.2V or VCC – 0.2V See Data Retention tCDR Waveforms (below) tR MIN. 1.5 TYP. - MAX. 3.6 UNIT V - 4 40 mA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≥ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# Confidential VIH tR CE# ≥ Vcc-0.2V 8 VIH Rev 1.0 / May 2014 AS7C316096C 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ Confidential DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 0 3 6 9 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Rev 1.0 / May 2014 AS7C316096C Rev. 1.0 2048K X 8 BIT HIGH SPEED CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension Confidential 10 Rev 1.0 / May 2014 AS7C316096C Rev. 1.0 2048K X 8 BIT HIGH SPEED CMOS SRAM Alliance Memory Inc. reserves the rights to change the specifications and products without notice. ________________________________________ Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 Confidential 11 Rev 1.0 / May 2014