isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT21B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT21B 450V(Min)- BUT21C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE= 0 VALUE BUT21B UNIT 750 V BUT21C 850 BUT21B 400 BUT21C 450 V Collector-Emitter Voltage Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.cn MAX UNIT 1.25 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT21B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage CONDITIONS MIN TYP. MAX 400 BUT21B IC= 0.1A ;IB= 0; L= 25mH BUT21C BUT21B UNIT V 450 IC= 3A; IB= 0.4A 1.5 V BUT21C IC= 3A; IB= 0.5A 1.5 BUT21B IC= 3A; IB= 0.4A 1.5 BUT21C IC= 3A; IB= 0.5A 1.5 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 mA hFE DC Current Gain IC= 0.5A ; VCE= 10V 1.0 μs 4.5 μs 0.7 μs 25 Switching Times; Resistive Load ton Turn-On Time tstg Storage Time VCC= 250V, tp= 20μs, T= 2ms For BUT21B IC= 3A; IB1= -IB2= 0.4A Fall Time For BUT21C IC= 3A; IB1= -IB2= 0.5A tf isc website：www.iscsemi.cn 2