CYSTEKEC DTD143EN3 Npn digital transistors (built-in resistors) Datasheet

Spec. No. : C378N3
Issued Date : 2004.01.15
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTD143EN3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTB143EN3
Equivalent Circuit
Outline
SOT-23
DTD143EN3
R1=4.7kΩ , R2=4.7 kΩ
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
DTD143EN3
Symbol
Limits
Unit
VCC
VIN
IO
Pd
Tj
Tstg
50
-10~+30
500
200
150
-55~+150
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C378N3
Issued Date : 2004.01.15
Revised Date :
Page No. : 2/4
Characteristics (Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
47
3.29
0.8
-
Typ.
0.1
4.7
1
200
Max.
0.5
0.3
1.8
0.5
6.11
1.2
-
Unit
V
V
V
mA
µA
kΩ
MHz
Test Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
VCE=10V, IC=50mA, f=100MHz *
* Transition frequency of the device
DTD143EN3
CYStek Product Specification
Spec. No. : C378N3
Issued Date : 2004.01.15
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Output Current
Output Voltage vs Output Current
1
Output Voltage---V O(ON)(V)
Current Gain---G I
1000
100
10
Io / Ii = 20
0.1
0.01
1
0.1
1
10
100
Output Current---I O(mA)
1
1000
Input Voltage vs Output Current(ON characteristics)
100
1000
Output Current vs Input Voltage(OFF characteristics)
10
100
Vcc = 5V
Vo = 0.3V
Output Current---Io(mA)
Input Voltage---V I(ON)(V)
10
Output Current---Io(mA)
10
1
1
0.1
0.01
0.1
1
10
100
1000
Output Current---Io(mA)
0
0.5
1
1.5
2
2.5
3
Input Voltage---VI(OFF)(V)
Power Derating Curve
Power Dissipation---P D(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
DTD143EN3
CYStek Product Specification
Spec. No. : C378N3
Issued Date : 2004.01.15
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
B
F23
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style : Pin 1.IN 2.GND 3.OUT
D
K
H
J
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTD143EN3
CYStek Product Specification
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