EC747N65 650V,7A N-Channel Power MOSFET C o n v e r t e r Features ◆ 650V, 7A, RDS(ON)(Max.) = 1.2Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Adapter LCD Panel Power Switching Mode Power Supply E-Bike Charger Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Limit Symbol Parameter Unit TO-220 TO-220F TO-263 VDS Drain-Source Voltage VGS Gate-Source Voltage ID a 650 V ±30 V Drain Current-Continuous, TC =25℃ 7 A Drain Current-Continuous, TC =100℃ 4.2 A 28 A b IDM Drain Current-Pulsed PD Maximum Power Dissipation ＠ TJ=25℃ EAS TJ,TSTG Single Pulsed Avalanche Energy 125 c Operating and Store Temperature Range 40 W 195 mJ -55 to 150 ℃ Thermal Characteristics Symbol R JC Parameter Thermal Resistance, Junction-Case Max. R JA Thermal Resistance, Junction-Ambient Max. E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 Value 1 3.1 63 Unit ℃/W ℃/W 4J06N-Rev.F001 EC747N65 650V,7A N-Channel Power MOSFET IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - C o n v e r Max. Unit t V e 20 μ Ar IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA VDS = VGS, ID = 250μA 2.0 2.91 4.0 0.93 1.2 Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics Symbol Test Condition Parameter BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA Min. Typ. 650 ■ On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A V Ω ■ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 1272 - pF - 173 - pF - 27.1 - pF ■ Switching Characteristics td(on) Turn-On Delay Time tr td(off) Turn-On Rise Time Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge E-CMOS Corp. (www.ecmos.com.tw) VDD = 325V, ID = 7A RG = 10Ω, VGS = 10V VDS = 325V, ID = 7A VGS = 10V Page 2 of 6 - 28.7 - ns - 8.4 - ns - 49.3 - ns - - ns 134 - 32.5 nC 9.6 nC - 13.7 nC - 4J06N-Rev.F001 EC747N65 650V,7A N-Channel Power MOSFET ■ Drain-Source Diode Characteristics IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 7.0 ISM Miximum Pulsed Current VGS = 0V - - 28 VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =3.5A - - 1.5 C o n v e Ar t A e Vr Notes : a. TJ = +25 C to +150 C. b. Repetitive rating; pulse width limited by maximum junction temperature. c. L=10mH, VDD =50V, IAS =9A, RG =25Ω Starting TJ =25 ℃. d. Pulse width≦ 300 μs; duty cycle≦ 2%. ORDERING INFORMATION Part Number Package EC747N65AFR TO-220F-3L EC747N65AR TO-220-3L EC747N65A9R TO-263-3L E-CMOS Corp. (www.ecmos.com.tw) Marking 747N65 LLLLL YYWW Page 3 of 6 Marking Information 1. LLLLL：Lot No. 2. YY：Year code 3. WW：Week code 4J06N-Rev.F001 650V,7A N-Channel Power MOSFET EC747N65 C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 4J06N-Rev.F001 650V,7A N-Channel Power MOSFET EC747N65 C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 6 4J06N-Rev.F001 650V,7A N-Channel Power MOSFET EC747N65 C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 6 4J06N-Rev.F001