Mitsubishi CM400HU-24H Igbt modules high power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400HU-24H
● IC ................................................................... 400A
● VCES ....................................................... 1200V
● Insulated Type
● 1-element in a pack
● UL Recognized
Yellow Card No. E80276
File No. E80271
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
4-φ6.5
MOUNTING HOLES
107
93 ±0.25
26
A B
20.5
24.35
E
C
18
2-M4NUTS
CM
2-M8NUTS
TC measured point
6
NUTS
A
M8
(6.8)
M4
(3.2)
B
(7.2)
(4)
C
(14)
(7.2)
23
+1
23
4
34 –0.5
6.5
+1
CIRCUIT DIAGRAM
G
E
9
26 –0.5
G
C
29
21.15
17.2
62
48 ±0.25
10 9.5
19.1
(7)
13.5
C
12.55
(7)
E
E
LABEL
Feb. 2009
1
MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified.)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
(Note 1)
(Note 1)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
Auxiliary terminals M4 screw
Typical value
Ratings
Unit
1200
±20
400
800
400
800
2100
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
450
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified.)
Symbol
Collector cutoff current
Gate-emitter
VGE(th)
threshold voltage
Gate-leakage current
IGES
Collector-emitter
VCE(sat)
saturation voltage
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
QG
Total gate charge
td (on)
Turn-on delay time
tr
Turn-on rise time
td (off)
Turn-off delay time
tf
Turn-off fall time
V EC(Note 2) Emitter-collector voltage
t rr (Note 2) Reverse recovery time
Q rr (Note 2) Reverse recovery charge
Rth(j-c)Q
Thermal resistance (Note 5)
Rth(j-c)R
Rth(c-f)
Contact thermal resistance
ICES
Note 1.
2.
3.
4.
5.
6.
VCE = VCES, VGE = 0V
Min
—
Limits
Typ
—
Max
2
IC = 40mA, VCE = 10V
4.5
6
7.5
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.9
2.85
—
—
—
1500
—
—
—
—
—
—
2.2
—
—
0.02
0.5
3.7
—
60
21
12
—
250
350
350
350
3.2
300
—
0.06
0.09
—
µA
Item
Test Conditions
±VGE = VGES, VCE = 0V
IC = 400A, VGE = 15V
(Note 4)
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 600V, IC = 400A, VGE = 15V
VCC = 600V, IC = 400A
VGE = ±15V
RG = 0.78Ω
Resistive load
IE = 400A, VGE = 0V
IE = 400A,
die / dt = –800A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to heat sink, conductive grease applied (Note 6)
Unit
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
Junction temperature (Tj) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
11
400
10
200
9
8
0
1
2
3
4
5
6
7
8
600
400
200
Tj = 25°C
Tj = 125°C
0
9 10
0
2
4
6
8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
VCE = 10V
12
600
0
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
3
2
EMITTER CURRENT IE (A)
800
15
VGE = 20
(V)
Tj = 25°C
0
200
400
600
8
IC = 800A
7
6
IC = 400A
5
4
3
2
IC = 160A
1
0
2
4
6
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
7
5
3
2
102
7
5
1.0
Tj = 25°C
9
COLLECTOR CURRENT IC (A)
103
3
10
0
800
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR CURRENT IC (A)
800
1.5
2.0
2.5
3.0
3.5
3
2
VGE = 0V
102
7
5
3
2
Cies
101
7
5
3
2
100
7
5
Coes
Cres
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
103
2
td(on)
102
7
5
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
3
tr
101 1
10
2
3
5 7 102
2
3
2
5
lrr
3
2
2
102
101
7
5
7
5
3
3
2
2
2
3
5 7 102
100
2
3
5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
Per unit base = Rth(j – c) = 0.06K/W
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
3
trr
COLLECTOR CURRENT IC (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
100
5
101 1
10
5 7 103
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
SWITCHING TIMES (ns)
tf
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
REVERSE RECOVERY TIME trr (ns)
td(off)
7
5
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
102
–di/dt = 800A/µs
7
7
Tj = 25°C
REVERSE RECOVERY CURRENT Irr (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
2
100
Per unit base = Rth(j – c) = 0.09K/W
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 400A
VCC = 400V
15
VCC = 600V
10
5
0
0
400
800
1200
1600
2000
GATE CHARGE QG (nC)
Feb. 2009
4
Similar pages