Dynex DCR1650C65 Phase control thyristor Datasheet

DCR1650C65
Phase Control Thyristor
Preliminary Information
DS5949-1.0 September 2009 (LN26869)
FEATURES
KEY PARAMETERS
Double Side Cooling
High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
6500V
1650A
22000A
1500V/µs
300A/µs
* Higher dV/dt selections available
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR1650C65*
DCR1650C60
DCR1650C55
DCR1650C50
Repetitive Peak
Voltages
VDRM and VRRM
V
6500
6000
5500
5000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
0
0
* 6200V @ -40 C, 6500V @ 0 C
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Outline type code: C
For example:
(See Package Details for further information)
DCR1650C65
Fig. 1 Package outline
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR1650C65
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
1650
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2590
A
Continuous (direct) on-state current
-
2575
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
22.0
kA
VR = 0
2.42
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.0101
°C/W
Single side cooled
Anode DC
-
0.0176
°C/W
Cathode DC
-
0.0239
°C/W
Double side
-
0.0025
°C/W
-
0.005
°C/W
-
125
°C
Clamping force 37kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
33
41
kN
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DCR1650C65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
150
A/µs
Gate source 30V, 10,
Non-repetitive
-
300
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
100A to 1500A at Tcase = 125°C
-
1.0
V
Threshold voltage – High level
1500A to 7200A at Tcase = 125°C
-
1.2
V
On-state slope resistance – Low level
100A to 1500A at Tcase = 125°C
-
0.615
m
On-state slope resistance – High level
1500A to 7200A at Tcase = 125°C
-
0.5
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
-
1200
µs
2000
4500
µC
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR1650C65
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
15
mA
CURVES
Instantaneous on-state current IT - (A)
7000
6000
5000
4000
3000
2000
min 125°C
max 125°C
min 25°C
max 25°C
1000
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.666848
B = 0.033446
C = 0.000418
D = 0.009666
these values are valid for Tj = 125°C for IT 100A to 7200A
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DCR1650C65
SEMICONDUCTOR
10
130
180
120
90
60
30
120
Maximum case temperature, T case ( o C )
110
Mean power dissipation - (kW)
8
6
4
180
120
90
60
30
2
100
90
80
70
60
50
40
30
20
10
0
0
0
500
1000
1500
2000
0
2500
500
Fig.3 On-state power dissipation – sine wave
2000
2500
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
125
16
180
120
90
60
30
100
14
Mean power dissipation - (kW)
Maximum heatsink temperature, THeatsink - ( °C)
1500
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
1000
75
50
25
12
10
8
6
d.c.
180
120
90
60
4
2
0
0
0
500
1000
1500
2000
2500
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000
2000
3000
4000
5000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR1650C65
SEMICONDUCTOR
d.c.
180
120
90
60
30
100
125
Maximum heatsink temperature Theatsink -(o C)
Maximum permissible case temperature , Tcase -(°C)
125
75
50
25
d.c.
180
120
90
60
30
100
75
50
25
0
0
0
0
500 1000 1500 2000 2500 3000 3500
500 1000 1500 2000 2500 3000 3500 4000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.8 Maximum
125 permissible heatsink temperature,
double side cooled – rectangular wave
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Double side cooled
Thermal impedance, Zth(j-c) - ( °C/kW)
30
25
20
1
1.1043
3
4.5096
4
1.9009
Ri (°C/kW)
0.006176 0.0517916 0.3820376
1.0977
2.4566
4.0469
1.06
9.9994
Ti (s)
0.006153
Ri (°C/kW)
Ti (s)
Double Side
Cooling
Anode side cooled
Anode Side
Cooling
Cathode side cooled Ri (°C/kW)
Ti (s)
Cathode Sided
Cooling
Zth = [Ri x ( 1-exp. (t/ti))]
2
2.576
0.050142 0.3129407
1.1519
2.8926
5.27
2.4064
17.4793
0.006389 0.0582953 0.3775516
3.97
[1]
Zth = [Ri x ( 1-exp. (t/ti))]
15
Rth(j-c) Conduction
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
10
Double side cooling
Zth (z)
5
0
0.001
0.01
0.1
1
10
100
°
180
120
90
60
30
15
sine.
1.95
2.32
2.74
3.14
3.46
3.61
rect.
1.26
1.89
2.27
2.70
3.19
3.47
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.95
2.32
2.74
3.14
3.46
3.62
rect.
1.26
1.89
2.27
2.70
3.19
3.47
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.95
2.31
2.72
3.12
3.43
3.58
rect.
1.26
1.88
2.26
2.68
3.17
3.44
Time - ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR1650C65
SEMICONDUCTOR
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
25000
700
Reverse recovery current, IRR - (A)
Qs (Max) = 5265.1*(di/dt)0.4473
Stored Charge, Qs- (uC)
20000
15000
Qs(Min)=2592.3*(di/dt)0.5818
10000
Conditions:
Tj = 125° C, VRpeak ~ 4500V
VRM ~ 3000V
snubber as appropriate to
control reverse voltages
5000
5
10
15
20
25
30
Rate of change of on-state current, di/dt - (A/us)
Fig.12 Reverse recovery charge
600
500
400
300
Irr (Min)= 37.17*(di/dt)0.8012
Conditions:
Tj = 125° C, VRpeak ~ 4500V
VRM ~ 3000V
snubber as appropriate to
control reverse voltages
200
100
0
0
Irr (Max) = 53.831*(di/dt)0.729
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current
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DCR1650C65
SEMICONDUCTOR
10
9
Pulse
Width us
100
200
500
1000
10000
Gate trigger voltage, VGT - (V)
8
7
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Upper Limit
6
5
Preferred gate drive area
4
3
2
o
1
Tj = -40oC
Tj = 25oC
Lower Limit
Tj = 125 C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR1650C65
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Minimum
Thickness
(mm)
26.415
26.49
26.76
26.84
27.1
27.46
25.865
25.94
26.17
26.29
26.55
26.91
Ø98.9 MAX
Ø62.85 NOM
Ø1.5
CATHODE
Device
DCR2860C22
DCR2630C28
DCR2150C42
DCR1950C52
DCR1650C65
DCR1370C85
Maximum
Thickness
(mm)
GATE
ANODE
Ø62.85 NOM
FOR PACKAGE HEIGHT
SEE TABLE
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: C
Fig.16 Package outline
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DCR1650C65
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
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products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
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