MCC BAT54 THRU BAT54S omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • Low Forward Voltage Surface Mount device Very small conduction losses MCC Catalog Number BAT54 BAT54A BAT54C BAT54S 250mWatt, 30Volt Schottky Barrier Diode Device Marking Type L4P L42 L43 L44 Single Dual Dual Dual Pin Configuration SOT-23 (See Page 3) Figure 1 Figure 2 Figure 3 Figure 4 A D C Maximum Ratings F Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t<1s Total Power Dissipation @ TA = 25°C Storage Temperature Range Junction Temperature Soldering temperature during 10s VR IF IFSM PD Tstg Tj Tj 30V 0.3A 1.0mA 250mW -55°C to 150°C 150°C 260°C Electrical Characteristics @ 25 °C Unless Otherwise Specified Ratings Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA Reverse Current Reverse Breakdown Voltage Capacitance Symbol Reverse Recovery Time Thermal Resistance, Junction to Ambient Max. IR V(BR) 240mV 320mV 400mV 500mV 900mV 2.0 uA >30V CJ 10pF trr 5nS RθJA 500K/W VF Notes B E H G J K DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 VR = 25V .035 .900 .079 2.000 Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA .037 .950 www.mccsemi.com .037 .950 inches mm MCC BAT54 thru BAT54S Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 0.30 0.25 δ=1 0.20 0.20 0.15 0.15 0.10 0.10 T T 0.05 0.05 IF(av) (A) 0.05 0.10 0.15 0.20 δ=tp/T 0.25 tp 0.30 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 IF(av)(A) 0.35 0.25 0.00 0.00 Fig.2 : Average forward current versus ambient temperature ( δ = 1). 0.00 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) 1.00 δ = 0.5 δ = 0.2 Ta=25°C δ = 0.1 Ta=50°C 0.10 Ta=100°C T Single pulse t δ=0.5 tp(s) t(s) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 www.mccsemi.com δ=tp/T 1E+0 1E+1 tp 1E+2 MCC BAT54 thru BAT54S Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). Fig.6 : Reverse leakage current versus junction temperature. IR(µA) IR(µA) 1E+4 VR=30V 1E+2 1E+3 Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C) VR(V) 1E-2 0 5 10 1E-2 15 20 25 30 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). 0 25 50 100 125 150 Fig.8 : Forward voltage drop versus forward current (typical values). C(pF) IFM(A) 5E-1 10 F=1MHz Tj=25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V) VR(V) 1 75 1 2 5 10 20 30 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Pin Configuration - Top View 3 1 2 Figure 1 Figure 2 BAT54 BAT54A Figure 3 BAT54C Figure 4 BAT54S www.mccsemi.com