MCC BAT54S 250mwatt, 30volt schottky barrier diode Datasheet

MCC
BAT54
THRU
BAT54S
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
Features
•
•
•
Low Forward Voltage
Surface Mount device
Very small conduction losses
MCC
Catalog
Number
BAT54
BAT54A
BAT54C
BAT54S
250mWatt, 30Volt
Schottky Barrier Diode
Device
Marking
Type
L4P
L42
L43
L44
Single
Dual
Dual
Dual
Pin
Configuration
SOT-23
(See Page 3)
Figure 1
Figure 2
Figure 3
Figure 4
A
D
C
Maximum Ratings
F
Continuos Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ TA = 25°C
Storage Temperature Range
Junction Temperature
Soldering temperature during 10s
VR
IF
IFSM
PD
Tstg
Tj
Tj
30V
0.3A
1.0mA
250mW
-55°C to 150°C
150°C
260°C
Electrical Characteristics @ 25 °C Unless Otherwise Specified
Ratings
Forward Voltage at
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
Reverse Current
Reverse Breakdown
Voltage
Capacitance
Symbol
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
Max.
IR
V(BR)
240mV
320mV
400mV
500mV
900mV
2.0 uA
>30V
CJ
10pF
trr
5nS
RθJA
500K/W
VF
Notes
B
E
H
G
J
K
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
VR = 25V
.035
.900
.079
2.000
Measured at
1.0MHz, VR=1.0V
IF=IR=10mA;
I(REC) = 1mA
.037
.950
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.037
.950
inches
mm
MCC
BAT54 thru BAT54S
Fig.1 : Average forward power dissipation versus
average forward current.
PF(av)(W)
0.35
0.30
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
0.30
0.25
δ=1
0.20
0.20
0.15
0.15
0.10
0.10
T
T
0.05
0.05
IF(av) (A)
0.05
0.10
0.15
0.20
δ=tp/T
0.25
tp
0.30
Fig.3 : Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 IM
0.2
0.1
0.0
1E-3
IF(av)(A)
0.35
0.25
0.00
0.00
Fig.2 : Average forward current versus ambient
temperature ( δ = 1).
0.00
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
Ta=25°C
δ = 0.1
Ta=50°C
0.10
Ta=100°C
T
Single pulse
t
δ=0.5
tp(s)
t(s)
1E-2
1E-1
1E+0
0.01
1E-3
1E-2
1E-1
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δ=tp/T
1E+0
1E+1
tp
1E+2
MCC
BAT54 thru BAT54S
Fig.5 : Reverse leakage current versus reverse
voltage applied (typical values).
Fig.6 : Reverse leakage current versus junction
temperature.
IR(µA)
IR(µA)
1E+4
VR=30V
1E+2
1E+3
Tj=100°C
1E+1
1E+2
1E+1
1E+0
Tj=50°C
1E+0
Tj=25°C
1E-1
1E-1
Tj(°C)
VR(V)
1E-2
0
5
10
1E-2
15
20
25
30
Fig.7 : Junction capacitance versus reverse
voltage applied (typical values).
0
25
50
100
125
150
Fig.8 : Forward voltage drop versus forward
current (typical values).
C(pF)
IFM(A)
5E-1
10
F=1MHz
Tj=25°C
1E-1
5
Tj=100°C
1E-2
Tj=50°C
Tj=25°C
2
1E-3
VFM(V)
VR(V)
1
75
1
2
5
10
20
30
1E-4
0.0 0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Pin Configuration - Top View
3
1
2
Figure 1
Figure 2
BAT54
BAT54A
Figure 3
BAT54C
Figure 4
BAT54S
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