isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage (RBE= 100Ω) Collector-Emitter Voltage VALUE BD246 -55 BD246A -70 BD246B -90 BD246C -115 BD246 -45 BD246A -60 BD246B -80 BD246C -100 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -3 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 W 80 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.56 ℃/W 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD246/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD246 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT -45 BD246A -60 IC= -30mA ;IB=0 V BD246B -80 BD246C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -4.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.6 V VBE(on)-2 Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V -0.4 mA -0.7 mA -1.0 mA ICES ICEO Collector Cutoff Current Collector Cutoff Current BD246 VCE= -55V; VBE= 0 BD246A VCE= -70V; VBE= 0 BD246B VCE= -90V; VBE= 0 BD246C VCE= -115V; VBE= 0 BD246/A VCE= -30V;IB= 0 BD246B/C VCE= -60V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 20 hFE-3 DC Current Gain IC= -10A ; VCE= -4V 4 Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V,ftest= 1.0MHz fT isc website：www.iscsemi.com 2 3.0 MHz isc & iscsemi is registered trademark