DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification Supersedes data of 1999 May 21 2002 Feb 28 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. k columns a APPLICATIONS • Low voltage stabilizers or voltage references. MAM215 DESCRIPTION Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 ±2% (BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The cathode is indicated by a yellow band. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge see Tables 1 and 2 A Ptot total power dissipation Tamb ≤ 50 °C; note 1 − 400 mW tie-point ≤ 50 °C; note 1 − 500 mW 40 W tp = 100 µs; square wave; − Tj = 25 °C prior to surge; see Fig.3 250 mA PZSM non-repetitive peak reverse power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. 2002 Feb 28 2 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series ELECTRICAL CHARACTERISTICS Total BZV55-B and BZV55-C series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER MAX. UNIT IF = 10 mA; see Fig.4 0.9 V BZV55-B/C2V4 VR = 1 V 50 µA BZV55-B/C2V7 VR = 1 V 20 µA BZV55-B/C3V0 VR = 1 V 10 µA BZV55-B/C3V3 VR = 1 V 5 µA BZV55-B/C3V6 VR = 1 V 5 µA BZV55-B/C3V9 VR = 1 V 3 µA BZV55-B/C4V3 VR = 1 V 3 µA BZV55-B/C4V7 VR = 2 V 3 µA BZV55-B/C5V1 VR = 2 V 2 µA BZV55-B/C5V6 VR = 2 V 1 µA BZV55-B/C6V2 VR = 4 V 3 µA BZV55-B/C6V8 VR = 4 V 2 µA BZV55-B/C7V5 VR = 5 V 1 µA BZV55-B/C8V2 VR = 5 V 700 nA BZV55-B/C9V1 VR = 6 V 500 nA BZV55-B/C10 VR = 7 V 200 nA BZV55-B/C11 VR = 8 V 100 nA BZV55-B/C12 VR = 8 V 100 nA BZV55-B/C13 VR = 8 V 100 nA BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZnom 50 nA VF forward voltage IR reverse current 2002 Feb 28 CONDITIONS 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... DIFFERENTIAL RESISTANCE rdif (Ω) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA MIN. MIN. TYP. MAX. MAX. MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C at IZtest = 5 mA TYP. MAX. MIN. TYP. MAX. MAX. MAX. 2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 4 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5 22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25 Product specification 2.94 3.23 BZV55 series 3V0 3V3 Philips Semiconductors BZV55Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 5 mA Voltage regulator diodes 2002 Feb 28 Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24 Tj = 25 °C unless otherwise specified. This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C 5 Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 MAX. at IZtest = 0.5 mA at IZtest = 2 mA TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. Philips Semiconductors BZV55Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 2 mA Voltage regulator diodes 2002 Feb 28 Table 2 Per type, BZV55-B/C27 to BZV55-B/C75 Tj = 25 °C unless otherwise specified. Product specification BZV55 series Philips Semiconductors Product specification Voltage regulator diodes BZV55 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient see Fig.2 and note 1 380 K/W Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp T 1 10−1 1 10 102 103 104 δ= 6 T tp (ms) Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 2002 Feb 28 tp 105 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Fig.4 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 VF (V) 1.0 Typical forward current as a function of forward voltage. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 0 4 8 BZV55-B/C2V4 to BZV55-B/C4V3. Tj = 25 to 150 °C. BZV55-B/C4V7 to BZV55-B/C12. Tj = 25 to 150 °C. Fig.5 Fig.6 Temperature coefficient as a function of working current; typical values. 2002 Feb 28 7 12 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZV55 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 2002 Feb 28 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 8 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Feb 28 9 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series NOTES 2002 Feb 28 10 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series NOTES 2002 Feb 28 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Feb 28 Document order number: 9397 750 09386