Vishay BZX84B6V2-V Small signal zener diode Datasheet

BZX84-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• These diodes are also available in other
case styles and other configurations
including: the SOD-123 case with type e3
designation BZT52 series, the dual zener
diode common anode configuration in the SOT-23
case with type designation AZ23 series and the
dual zener diode common cathode configuration
in the SOT-23 case with type designation DZ23
series.
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for
± 2 % tolerance.
• Silicon Planar Power Zener Diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
18078
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
1)
Symbol
Ptot
Value
Unit
1)
mW
300
Device on fiberglass substrate, see layout.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
RthJA
420 1)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
Thermal resistance junction to ambient air
1)
Test condition
Device on fiberglass substrate, see layout.
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
1
BZX84-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener
Voltage
Range
VZ @ IZT1
Dynamic Resistance
rzj @ IZT1
Temp.
Coefficient
of Zener
Voltage
Test
Current
Reverse Leakage
Current
IZT1
αVZ @ IZT1
IZT2
IR
@ VR
mA
10-4/°C
mA
µA
V
min
max
min
max
BZX84C2V4-V
Z11
2.2
2.6
70 (≤100)
275
5
-9.0
-4.0
1
50
1
BZX84C2V7-V
Z12
2.5
2.9
75 (≤100)
300 (≤600)
5
-9.0
-4.0
1
20
1
BZX84C3V0-V
Z13
2.8
3.2
80 (≤95)
325 (≤600)
5
-9.0
-3.0
1
10
1
BZX84C3V3-V
Z14
3.1
3.5
85 (≤95)
350 (≤600)
5
-8.0
-3.0
1
5
1
BZX84C3V6-V
Z15
3.4
3.8
85 (≤90)
375 (≤600)
5
-8.0
-3.0
1
5
1
BZX84C3V9-V
Z16
3.7
4.1
85 (≤90)
400 (≤600)
5
-7.0
-3.0
1
3
1
BZX84C4V3-V
Z17
4
4.6
80 (≤90)
410 (≤600)
5
-6.0
-1.0
1
3
1
BZX84C4V7-V
Z1
4.4
5
50 (≤80)
425 (≤500)
5
-5.0
+2.0
1
3
2
BZX84C5V1-V
Z2
4.8
5.4
40 (≤60)
400 (≤480)
5
-3.0
+4.0
1
2
2
BZX84C5V6-V
Z3
5.2
6
15 (≤40)
80 (≤400)
5
-2.0
+6.0
1
1
2
BZX84C6V2-V
Z4
5.8
6.6
6.0 (≤10)
40 (≤150)
5
-1.0
+7.0
1
3
4
BZX84C6V8-V
Z5
6.4
7.2
6.0 (≤15)
30 (≤80)
5
+2.0
+7.0
1
2
4
BZX84C7V5-V
Z6
7
7.9
6.0 (≤15)
30 (≤80)
5
+3.0
+7.0
1
1
5
BZX84C8V2-V
Z7
7.7
8.7
6.0 (≤15)
40 (≤80)
5
+4.0
+7.0
1
0.7
5
BZX84C9V1-V
Z8
8.5
9.6
6.0 (≤15)
40 (≤100)
5
+5.0
+8.0
1
0.5
6
BZX84C10-V
Z9
9.4
10.6
8.0 (≤20)
50 (≤150)
5
+5.0
+8.0
1
0.2
7
BZX84C11-V
Y1
10.4
11.6
10 (≤20)
50 (≤150)
5
+5.0
+9.0
1
0.1
8
BZX84C12-V
Y2
11.4
12.7
10 (≤25)
50 (≤150)
5
+6.0
+9.0
1
0.1
8
BZX84C13-V
Y3
12.4
14.1
10 (≤30)
50 (≤170)
5
+7.0
+9.0
1
0.1
8
BZX84C15-V
Y4
13.8
15.6
10 (≤30)
50 (≤200)
5
+7.0
+9.0
1
0.05
0.7 VZnom.
BZX84C16-V
Y5
15.3
17.1
10 (≤40)
50 (≤200)
5
+8.0
+9.5
1
0.05
0.7 VZnom.
BZX84C18-V
Y6
16.8
19.1
10 (≤45)
50 (≤225)
5
+8.0
+9.5
1
0.05
0.7 VZnom.
BZX84C20-V
Y7
18.8
21.2
15 (≤55)
60 (≤225)
5
+8.0
+10
1
0.05
0.7 VZnom.
BZX84C22-V
Y8
20.8
23.3
20 (≤55)
60 (≤250)
5
+8.0
+10
1
0.05
0.7 VZnom.
BZX84C24-V
Y9
22.8
25.6
25 (≤70)
60 (≤250)
5
+8.0
+10
1
0.05
0.7 VZnom.
BZX84C27-V
Y10
25.1
28.9
25 (≤80)
65 (≤300)
2
+8.0
+10
0.5
0.05
0.7 VZnom.
BZX84C30-V
Y11
28
32
30 (≤80)
70 (≤300)
2
+8.0
+10
0.5
0.05
0.7 VZnom.
BZX84C33-V
Y12
31
35
35 (≤80)
75 (≤325)
2
+8.0
+10
0.5
0.05
0.7 VZnom.
BZX84C36-V
Y13
34
38
35 (≤90)
80 (≤350)
2
+8.0
+10
0.5
0.05
0.7 VZnom.
BZX84C39-V
Y14
37
41
40 (≤130)
80 (≤350)
2
+10
+12
0.5
0.05
0.7 VZnom.
BZX84C43-V
Y15
40
46
45 (≤150)
85 (≤375)
2
+10
+12
0.5
0.05
0.7 VZnom.
BZX84C47-V
Y16
44
50
50 (≤170)
85 (≤375)
2
+10
+12
0.5
0.05
0.7 VZnom.
BZX84C51-V
Y17
48
54
60 (≤180)
85 (≤400)
2
+10
+12
0.5
0.05
0.7 VZnom.
BZX84C56-V
Y18
52
60
70 (≤200)
100 (≤425)
2
+9.0
+11
0.5
0.05
0.7 VZnom.
BZX84C62-V
Y19
58
66
80 (≤215)
100 (≤450)
2
+9.0
+12
0.5
0.05
0.7 VZnom.
BZX84C68-V
Y20
64
72
90 (≤240)
150 (≤475)
2
+10
+12
0.5
0.05
0.7 VZnom.
BZX84C75-V
Y21
70
79
95 (≤255)
170 (≤500)
2
+10
+12
0.5
0.05
0.7 VZnom.
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2
rzj @ IZT2
Ω
V
Test
Current
Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener
Voltage
Range
VZ @ IZT1
Dynamic Resistance
rzj @ IZT1
rzj @ IZT2
Ω
V
Test
Current
Temp.
Coefficient
of Zener
Voltage
Test
Current
Reverse Leakage
Current
IZT1
αVZ @ IZT1
IZT2
IR
@ VR
mA
10-4/°C
mA
µA
V
min
max
min
max
BZX84B2V4-V
Z50
2.35
2.45
70 (≤100)
275
5
-9
-4
1
50
1
BZX84B2V7-V
Z51
2.65
2.75
75 (≤100)
300 (≤600)
5
-9
-4
1
20
1
BZX84B3V0-V
Z52
2.94
3.06
80 (≤95)
325 (≤600)
5
-9
-3
1
10
1
BZX84B3V3-V
Z53
3.23
3.37
85 (≤95)
350 (≤600)
5
-8
-3
1
5
1
BZX84B3V6-V
Z54
3.53
3.67
85 (≤90)
375 (≤600)
5
-8
-3
1
5
1
BZX84B3V9-V
Z55
3.82
3.98
85 (≤90)
400 (≤600)
5
-7
-3
1
3
1
BZX84B4V3-V
Z56
4.21
4.39
80 (≤90)
410 (≤600)
5
-6
-1
1
3
1
BZX84B4V7-V
Z57
4.61
4.79
50 (≤80)
425 (≤500)
5
-5
2
1
3
2
BZX84B5V1-V
Z58
5
5.2
40 (≤60)
400 (≤480)
5
-3
4
1
2
2
BZX84B5V6-V
Z59
5.49
5.71
15 (≤40)
80 (≤400)
5
-2
6
1
1
2
BZX84B6V2-V
Z60
6.08
6.32
6.0 (≤10)
40 (≤150)
5
-1
7
1
3
4
BZX84B6V8-V
Z61
6.66
6.94
6.0 (≤15)
30 (≤80)
5
2
7
1
2
4
BZX84B7V5-V
Z62
7.35
7.65
6.0 (≤15)
30 (≤80)
5
3
7
1
1
5
BZX84B8V2-V
Z63
8.04
8.36
6.0 (≤15)
40 (≤80)
5
4
7
1
0.7
5
BZX84B9V1-V
Z64
8.92
9.28
6.0 (≤15)
40 (≤100)
5
5
8
1
0.5
6
BZX84B10-V
Z65
9.8
10.2
8.0 (≤20)
50 (≤150)
5
5
8
1
0.2
7
BZX84B11-V
Z66
10.8
11.2
10 (≤20)
50 (≤150)
5
5
9
1
0.1
8
BZX84B12-V
Z67
11.8
12.2
10 (≤25)
50 (≤150)
5
6
9
1
0.1
8
BZX84B13-V
Z68
12.7
13.3
10 (≤30)
50 (≤170)
5
7
9
1
0.1
8
BZX84B15-V
Z69
14.7
15.3
10 (≤30)
50 (≤200)
5
7
9
1
0.05
0.7 VZnom.
BZX84B16-V
Z70
15.7
16.3
10 (≤40)
50 (≤200)
5
8
9.5
1
0.05
0.7 VZnom.
BZX84B18-V
Z71
17.6
18.4
10 (≤45)
50 (≤225)
5
8
9.5
1
0.05
0.7 VZnom.
BZX84B20-V
Z72
19.6
20.4
15 (≤55)
60 (≤225)
5
8
10
1
0.05
0.7 VZnom.
BZX84B22-V
Z73
21.6
22.4
20 (≤55)
60 (≤250)
5
8
10
1
0.05
0.7 VZnom.
BZX84B24-V
Z74
23.5
24.5
25 (≤70)
60 (≤250)
5
8
10
1
0.05
0.7 VZnom.
BZX84B27-V
Z75
26.5
27.5
25 (≤80)
65 (≤300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX84B30-V
Z76
29.4
30.6
30 (≤80)
70 (≤300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX84B33-V
Z77
32.3
33.7
35 (≤80)
75 (≤325)
2
8
10
0.5
0.05
0.7 VZnom.
BZX84B36-V
Z78
35.3
36.7
35 (≤90)
80 (≤350)
2
8
10
0.5
0.05
0.7 VZnom.
BZX84B39-V
Z79
38.2
39.8
40 (≤130)
80 (≤350)
2
10
12
0.5
0.05
0.7 VZnom.
BZX84B43-V
Z80
42.1
43.9
45 (≤150)
85 (≤375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX84B47-V
Z81
46.1
47.9
50 (≤170)
85 (≤375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX84B51-V
Z82
50
52
60 (≤180)
85 (≤400)
2
10
12
0.5
0.05
0.7 VZnom.
BZX84B56-V
Z83
54.9
57.1
70 (≤200)
100 (≤425)
2
9
11
0.5
0.05
0.7 VZnom.
BZX84B62-V
Z84
60.8
63.2
80 (≤215)
100 (≤450)
2
9
12
0.5
0.05
0.7 VZnom.
BZX84B68-V
Z85
66.6
69.4
90 (≤240)
150 (≤475)
2
10
12
0.5
0.05
0.7 VZnom.
BZX84B75-V
Z86
73.5
76.5
95 (≤255)
170 (≤500)
2
10
12
0.5
0.05
0.7 VZnom.
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
3
BZX84-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18117
18114
Figure 1. Forward characteristics
18115
Figure 4. Dynamic Resistance vs. Zener Current
18118
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
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4
18119
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
°C
, =
18135
18120
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W
18124
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
18136
Figure 9. Dynamic Resistance vs. Zener Voltage
Document Number 85763
Rev. 1.7, 14-Jul-05
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
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BZX84-V-Series
Vishay Semiconductors
18126
Figure 13. Change of Zener Voltage vs. Junction Temperature
18137
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18138
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
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Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
18111
Figure 16. Breakdown Characteristics
18112
Figure 17. Breakdown Characteristics
Document Number 85763
Rev. 1.7, 14-Jul-05
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7
BZX84-V-Series
Vishay Semiconductors
18113
Figure 18. Breakdown Characteristics
Layout for RTheta;JA test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
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17451
Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.95 (.037)
1.15 (.045)
Package Dimensions in mm (Inches)
2.6 (.102)
2.35 (.092)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.52 (0.020)
0.4 (.016)
0.95 (.037)
0.95 (.037)
1.20(.047)
1.43 (.056)
0.9 (0.035)
2.0 (0.079)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
9
BZX84-V-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85763
Rev. 1.7, 14-Jul-05