CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 45 MHz - 21.5 - dB f = 1000 MHz 22.0 23.0 24.0 dB 430 450 470 mA Itot [1] total current Direct Current (DC). [1] CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 2. Pinning information Table 2. Pinning Pin Description 1 input 2, 3 common Simplified outline Graphic symbol 5 1 3 5 7 9 1 5 +VB 7, 8 common 9 output 9 2 3 7 8 sym095 3. Ordering information Table 3. Ordering information Type number CGD1042H Package Name Description Version - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VB supply voltage Vi(RF) RF input voltage Tstg storage temperature Tmb mounting base temperature Conditions single tone CGD1042H_2 Product data sheet Min Max Unit - 30 V - 75 dBmV −40 +100 °C −20 +100 °C © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 2 of 7 CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 5. Characteristics Table 5. Characteristics Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp f = 45 MHz - 21.5 - dB f = 1000 MHz 22.0 23.0 24.0 dB power gain SLsl f = 45 MHz to 1000 MHz [1] - 1.5 - dB f = 45 MHz to 1000 MHz [2] - 0.5 - dB Vo = 55 dBmV at 1000 MHz [3] - −83 - dBc Vo = 59 dBmV at 1000 MHz [3] - −75 −70 dBc composite second-order distortion Vo = 55 dBmV at 1000 MHz [3] - −80 - dBc Vo = 59 dBmV at 1000 MHz [3] - −76 −68 dBc Vo = 55 dBmV at 1000 MHz [3] - −75 - dB Vo = 59 dBmV at 1000 MHz [3] - −67 - dB Vo = 55 dBmV at 1000 MHz [3] - 65 - dBc Vo = 59 dBmV at 1000 MHz [3] 55 58 - dBc f = 45 MHz to 200 MHz 20.0 - - dB f = 200 MHz to 550 MHz 17.5 - - dB f = 550 MHz to 870 MHz 15.0 - - dB f = 870 MHz to 914 MHz 14.5 - - dB f = 914 MHz to 1000 MHz 14.0 - - dB f = 45 MHz to 200 MHz 21.0 - - dB f = 200 MHz to 550 MHz 20.0 - - dB f = 550 MHz to 870 MHz 18.0 - - dB f = 870 MHz to 914 MHz 17.5 - - dB f = 914 MHz to 1000 MHz 17.0 - - dB - 5.0 5.5 dB 430 450 470 mA slope straight line FL flatness of frequency response CTB CSO Xmod CCN RLin RLout NF composite triple beat cross modulation carrier-to-composite noise input return loss output return loss noise figure Itot f = 50 MHz to 1000 MHz [4] total current [1] Gp at 1000 MHz minus Gp at 45 MHz. [2] flatness straight line (peak to valley). [3] 79 NTSC channels + 75 digital channels (−6 dB offset); tilt extrapolated to 18 dB at 1000 MHz. [4] Direct Current (DC). CGD1042H_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 3 of 7 CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c D max. d E max. e e1 F L min. p 4.15 2.04 0.51 0.25 27.2 13.75 2.54 5.08 12.7 8.8 3.85 2.54 0.38 Q max. q q1 JEDEC JEITA U1 U2 W w x EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 99-02-06 04-02-04 SOT115J Fig 1. S 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC REFERENCES IEC q2 Package outline SOT115J CGD1042H_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 4 of 7 CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 7. Abbreviations Table 6. Abbreviations Acronym Description CATV Community Antenna TeleVision GaAs Gallium-Arsenide NTSC National Television Standard Committee RF Radio Frequency UNC UNified Coarse 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes CGD1042H_2 20091116 Product data sheet - CGD1042H_1 Modifications: CGD1042H_1 • Table 5 on page 3: Correction made to the unit of Xmod. 20071009 Product data sheet CGD1042H_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 5 of 7 CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] CGD1042H_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 6 of 7 CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 4 5 5 6 6 6 6 6 6 7 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 November 2009 Document identifier: CGD1042H_2