AP9579GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Lower Gate Charge D D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S S G BVDSS -60V RDS(ON) 25mΩ ID -7.3A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -60 V +20 V 3 -7.3 A 3 -5.8 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current -30 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 ℃/W 1 201110261 AP9579GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -60 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - 18.2 25 mΩ VGS=-4.5V, ID=-5A - 22.5 30 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.5 -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 27 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-7A - 40 64 nC Qgs Gate-Source Charge VDS=-30V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC td(on) Turn-on Delay Time VDS=-30V - 12 - ns tr Rise Time ID=-1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω - 77 - ns tf Fall Time VGS=-10V - 37 - ns Ciss Input Capacitance VGS=0V - 3700 5920 pF Coss Output Capacitance VDS=-15V - 450 - pF Crss Reverse Transfer Capacitance f=1MHz - 300 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-7A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9579GM-HF 40 40 30 - 10 V - 7.0 V - 6.0 V - 5.0 V V G = - 4.0 V o - 10 V - 7.0 V - 6.0 V - 5.0 V V G = - 4.0 V T A = 150 C -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 20 10 30 20 10 0 0 0 1 2 3 4 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 24 I D = -7 A V G = -10V I D = -5 A T A =25 ℃ 23 Normalized RDS(ON) RDS(ON) (mΩ) 2.0 22 21 1.6 1.2 20 0.8 19 0.4 18 2 4 6 8 -50 10 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2 Normalized -VGS(th) (V) I D = -250uA -IS(A) 6 4 T j =150 o C T j =25 o C 1.6 1.2 0.8 2 0.4 0 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9579GM-HF 10 f=1.0MHz 5000 8 4000 C iss 6 C (pF) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -30V 3000 4 2000 2 1000 C oss C rss 0 0 0 20 40 60 1 80 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 100us Operation in this area limited by RDS(ON) 10 -ID (A) 1ms 10ms 1 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W Single Pulse 0.001 0.01 0.01 0.1 1 10 100 0.0001 1000 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 8 40 -ID , Drain Current (A) -ID , Drain Current (A) V DS = -5V 30 20 6 4 2 10 T j =150 o C o T j =25 C o T j = -40 C 0 0 0 1 2 3 4 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4