Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005S is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. · · · · The APT13005S is available in TO-220F-3, TO-126 and TO-251 packages. Applications · · · TO-126 APT13005S High Switching Speed High Collector-Emitter Voltage: 700V Low Cost High Efficiency Battery Chargers for Mobile Phone of BCD Solution Power Supply for DVD/STB of BCD Solution Driver for LED Lighting of BCD Solution TO-251 TO-220F-3 Figure 1. Package Types of APT13005S Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Pin Configuration U Package (TO-126) 3 Emitter 2 Collector 1 Base TF Package (TO-220F-3) 3 Emitter 2 Collector 1 Base I Package (TO-251) 3 Emitter 2 Collector 1 Base Figure 2. Pin Configuration of APT13005S (Front View) Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Ordering Information APT13005S - Circuit Type E1: Lead Free G1: Green Package U: TO-126 TF: TO-220F-3 I: TO-251 Blank: Tube Part Number Package Marking ID Green Lead Free Green Lead Free Packing Type TO-126 APT13005SU-E1 APT13005SU-G1 EU13005S GU13005S Tube TO-220F-3 APT13005STF-E1 APT13005STF-G1 APT13005STF-E1 APT13005STF-G1 Tube APT13005SI-E1 APT13005SI-G1 APT13005SI-E1 APT13005SI-G1 Tube TO-251 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 450 V Emitter-Base Breakdown Voltage (IC=0) VEBO 9 V IC 3.2 A ICM 6.4 A IB 1.6 A IBM 3.2 A Collector Current Collector Peak Current Base Current Base Peak Current 28 TO-220F-3 Power Dissipation, TC=25oC TO-251 PTOT TO-126 W 20 Operating Junction Temperature Storage Temperature Range 25 TJ 150 TSTG -55 to 150 oC o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Thermal Characteristics Parameter Symbol Maximum Thermal Resistance Condition θJC Value TO-220F-3 4.5 TO-251 5.0 TO-126 6.25 Junction to Case Unit oC/W Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) (Note 2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICEV VCE=700V VCEO (sus) IC=100µA VCE(sat) VBE(sat) DC Current Gain (Note 2) hFE Turn-on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Output Capacitance Current Gain Bandwidth Product Condition COB fT Min Typ Max Unit 10 µA 450 V IC=1.0A, IB=0.2A 0.3 IC=2.0A, IB=0.5A 0.6 IC=3.0A, IB=0.75A 1.0 IC=1.0A, IB=0.2A 1.2 IC=2.0A, IB=0.5A 1.4 V IC=1.0A, VCE=5.0V 15 35 IC=2.0A, VCE=5.0V 8 35 IC=2.0A, VCC=125V IB1=0.4A, IB2=-0.4A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A V 35 4 0.7 µs 4.5 µs 0.8 µs pF MHz Note 2: Pulse test for Pulse Width≤ 300µs, Duty Cycle ≤ 2%. Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Typical Performance Characteristics 10 10 DC Collector Current IC(A) Collector Current IC(A) DC 1 0.1 1 0.1 o TC=25 C 0.01 1 10 100 o TC=25 C 0.01 1000 1 10 Collector-Emitter Clamp Voltage VCE(V) 100 1000 Collector-Emitter Clamp Voltage VCE(V) Figure 3. Safe Operating Areas (TO-220F-3 Package) Figure 4. Safe Operating Areas (TO-251 Package) 125 10 100 Power Derating Factor (%) Collector Current IC(A) DC 1 0.1 75 50 25 o TC=25 C 0.01 0 1 10 100 1000 Collector-Emitter Clamp Voltage VCE(V) 0 25 50 75 100 125 150 175 200 o Case Temperature ( C) Figure 5. Safe Operating Areas (TO-126 Package) Figure 6. Power Derating Curve Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Typical Performance Characteristics (Continued) 3.5 50 IB=450mA IB=400mA IB=350mA IB=500mA 3.0 40 DC Current Gain Collector Current IC (A) IB=250mA 2.5 IB=200mA 2.0 IB=150mA 1.5 IB=100mA 1.0 IB=50mA 0.5 IB=20mA VCE=5V 45 IB=300mA o TJ=125 C 35 30 o TJ=25 C 25 20 15 10 0.0 0 1 2 3 4 5 6 5 0 7 0.01 Figure 7. Static Characterstics 1 Figure 8. DC Current Gain 1 1.2 Base-Emitter Voltage VBE(V) Collector-Emitter Voltage VCE(V) 0.1 Collector Current IC(A) Collector-Emitter Voltage VCE (V) HFE=4 o TJ=125 C 0.1 o TJ=25 C HFE=4 1.1 1.0 0.9 o TJ=25 C 0.8 o TJ=125 C 0.7 0.6 0.01 0.1 1 0.5 0.1 10 Collector Current IC(A) 1 10 Collector Current IC(A) Figure 9. Collector-Emitter Saturation Region Figure 10. Base-Emitter Saturation Voltage Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Mechanical Dimensions 2.400(0.094) 2.900(0.114) 1.060(0.042) 1.500(0.059) 0.000(0.000) 0.300(0.012) 3.900(0.154) 7.400(0.291) 8.200(0.323) 10.600(0.417) 11.200(0.440) Unit: mm(inch) 3.600(0.142) TO-126 Φ 3.100(0.122) 3.550(0.140) 1.170(0.046) 1.470(0.058) 2.100(0.083) 1.700(0.067) 14.500(0.570) 15.900(0.626) 0.660(0.026) 4.560(0.180) TYP. 0.860(0.034) 2.280(0.090) TYP Aug. 2011 Rev. 1. 1 0.400(0.016) 0.600(0.024) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10. 300(0. 406) Φ 3. 000(0. 119) 3. 550(0. 140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6. 900(0. 272) ∅7. 100(0. 280) 2. 350(0. 093) 2. 900(0. 114) 3. 370(0. 133) 3. 900(0. 154) 14. 700(0. 579) 16. 000(0. 630) 2.790(0.110) 4.500(0.177) 4. 300(0. 169) 4. 900(0. 193) 1. 000(0. 039) 1. 400(0. 055) 1. 100(0. 043) 1. 500(0. 059) 2.520(0.099) 2.920(0.115) 12. 500(0. 492) 13. 500(0. 531) 0. 550(0. 022) 0. 900(0. 035) 2. 540(0. 100) 2. 540(0. 100) Aug. 2011 Rev. 1. 1 0. 450(0. 018) 0. 600(0. 024) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S Mechanical Dimensions (Continued) Unit: mm(inch) 6.450(0.254) 6.750(0.266) 2.200（0. 087） 2.400（0. 094） 5. 200(0. 205) 5. 400( 0. 213) 0. 450(0. 018) 0. 550( 0. 022) 9.000(0.354) 9.400(0.370) 5.950 (0.234) 6.250 (0.246) 0.950(0.037) 1.250(0.049) TO-251 0. 640 (0.025 ) 0. 740 (0.029 ) 4.430 (0. 174) 4.730 ( 0. 186 ) 0. 450(0. 018) 0. 550(0. 022) 2. 240(0. 088 ) 2. 340(0.092) 0.950(0.037) 1.150(0.045) Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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