BCD APT13005SU-G1 High voltage fast switching npn power transistor Datasheet

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
General Description
Features
The APT13005S is a high voltage, high speed, high
efficiency switching transistor, and it is specially
designed for off-line switch mode power supplies with
low output power.
·
·
·
·
The APT13005S is available in TO-220F-3, TO-126
and TO-251 packages.
Applications
·
·
·
TO-126
APT13005S
High Switching Speed
High Collector-Emitter Voltage: 700V
Low Cost
High Efficiency
Battery Chargers for Mobile Phone of BCD Solution
Power Supply for DVD/STB of BCD Solution
Driver for LED Lighting of BCD Solution
TO-251
TO-220F-3
Figure 1. Package Types of APT13005S
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Pin Configuration
U Package
(TO-126)
3
Emitter
2
Collector
1
Base
TF Package
(TO-220F-3)
3
Emitter
2
Collector
1
Base
I Package
(TO-251)
3
Emitter
2
Collector
1
Base
Figure 2. Pin Configuration of APT13005S (Front View)
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Ordering Information
APT13005S
-
Circuit Type
E1: Lead Free
G1: Green
Package
U: TO-126
TF: TO-220F-3
I: TO-251
Blank: Tube
Part Number
Package
Marking ID
Green
Lead Free
Green
Lead Free
Packing Type
TO-126
APT13005SU-E1
APT13005SU-G1
EU13005S
GU13005S
Tube
TO-220F-3
APT13005STF-E1
APT13005STF-G1
APT13005STF-E1
APT13005STF-G1
Tube
APT13005SI-E1
APT13005SI-G1
APT13005SI-E1
APT13005SI-G1
Tube
TO-251
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Emitter Voltage (IB=0)
VCEO
450
V
Emitter-Base Breakdown Voltage (IC=0)
VEBO
9
V
IC
3.2
A
ICM
6.4
A
IB
1.6
A
IBM
3.2
A
Collector Current
Collector Peak Current
Base Current
Base Peak Current
28
TO-220F-3
Power Dissipation, TC=25oC
TO-251
PTOT
TO-126
W
20
Operating Junction Temperature
Storage Temperature Range
25
TJ
150
TSTG
-55 to 150
oC
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
Condition
θJC
Value
TO-220F-3
4.5
TO-251
5.0
TO-126
6.25
Junction to Case
Unit
oC/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Collector-Emitter Sustaining
Voltage (IB=0) (Note 2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Symbol
ICEV
VCE=700V
VCEO (sus)
IC=100µA
VCE(sat)
VBE(sat)
DC Current Gain (Note 2)
hFE
Turn-on Time with Resistive Load
ton
Storage Time with Resistive Load
ts
Fall Time with Resistive Load
tf
Output Capacitance
Current Gain Bandwidth Product
Condition
COB
fT
Min
Typ
Max
Unit
10
µA
450
V
IC=1.0A, IB=0.2A
0.3
IC=2.0A, IB=0.5A
0.6
IC=3.0A, IB=0.75A
1.0
IC=1.0A, IB=0.2A
1.2
IC=2.0A, IB=0.5A
1.4
V
IC=1.0A, VCE=5.0V
15
35
IC=2.0A, VCE=5.0V
8
35
IC=2.0A, VCC=125V
IB1=0.4A, IB2=-0.4A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
V
35
4
0.7
µs
4.5
µs
0.8
µs
pF
MHz
Note 2: Pulse test for Pulse Width≤ 300µs, Duty Cycle ≤ 2%.
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Typical Performance Characteristics
10
10
DC
Collector Current IC(A)
Collector Current IC(A)
DC
1
0.1
1
0.1
o
TC=25 C
0.01
1
10
100
o
TC=25 C
0.01
1000
1
10
Collector-Emitter Clamp Voltage VCE(V)
100
1000
Collector-Emitter Clamp Voltage VCE(V)
Figure 3. Safe Operating Areas
(TO-220F-3 Package)
Figure 4. Safe Operating Areas
(TO-251 Package)
125
10
100
Power Derating Factor (%)
Collector Current IC(A)
DC
1
0.1
75
50
25
o
TC=25 C
0.01
0
1
10
100
1000
Collector-Emitter Clamp Voltage VCE(V)
0
25
50
75
100
125
150
175
200
o
Case Temperature ( C)
Figure 5. Safe Operating Areas
(TO-126 Package)
Figure 6. Power Derating Curve
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Typical Performance Characteristics (Continued)
3.5
50
IB=450mA
IB=400mA
IB=350mA
IB=500mA
3.0
40
DC Current Gain
Collector Current IC (A)
IB=250mA
2.5
IB=200mA
2.0
IB=150mA
1.5
IB=100mA
1.0
IB=50mA
0.5
IB=20mA
VCE=5V
45
IB=300mA
o
TJ=125 C
35
30
o
TJ=25 C
25
20
15
10
0.0
0
1
2
3
4
5
6
5
0
7
0.01
Figure 7. Static Characterstics
1
Figure 8. DC Current Gain
1
1.2
Base-Emitter Voltage VBE(V)
Collector-Emitter Voltage VCE(V)
0.1
Collector Current IC(A)
Collector-Emitter Voltage VCE (V)
HFE=4
o
TJ=125 C
0.1
o
TJ=25 C
HFE=4
1.1
1.0
0.9
o
TJ=25 C
0.8
o
TJ=125 C
0.7
0.6
0.01
0.1
1
0.5
0.1
10
Collector Current IC(A)
1
10
Collector Current IC(A)
Figure 9. Collector-Emitter Saturation Region
Figure 10. Base-Emitter Saturation Voltage
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions
2.400(0.094)
2.900(0.114)
1.060(0.042)
1.500(0.059)
0.000(0.000)
0.300(0.012)
3.900(0.154)
7.400(0.291)
8.200(0.323)
10.600(0.417)
11.200(0.440)
Unit: mm(inch)
3.600(0.142)
TO-126
Φ 3.100(0.122)
3.550(0.140)
1.170(0.046)
1.470(0.058)
2.100(0.083)
1.700(0.067)
14.500(0.570)
15.900(0.626)
0.660(0.026)
4.560(0.180)
TYP.
0.860(0.034)
2.280(0.090)
TYP
Aug. 2011 Rev. 1. 1
0.400(0.016)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions (Continued)
TO-220F-3
9.700(0.382)
10. 300(0. 406)
Φ 3. 000(0. 119)
3. 550(0. 140)
Unit: mm(inch)
3.000(0.119)
3.400(0.134)
6. 900(0. 272)
∅7. 100(0. 280)
2. 350(0. 093)
2. 900(0. 114)
3. 370(0. 133)
3. 900(0. 154)
14. 700(0. 579)
16. 000(0. 630)
2.790(0.110)
4.500(0.177)
4. 300(0. 169)
4. 900(0. 193)
1. 000(0. 039)
1. 400(0. 055)
1. 100(0. 043)
1. 500(0. 059)
2.520(0.099)
2.920(0.115)
12. 500(0. 492)
13. 500(0. 531)
0. 550(0. 022)
0. 900(0. 035)
2. 540(0. 100)
2. 540(0. 100)
Aug. 2011 Rev. 1. 1
0. 450(0. 018)
0. 600(0. 024)
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005S
Mechanical Dimensions (Continued)
Unit: mm(inch)
6.450(0.254)
6.750(0.266)
2.200(0. 087)
2.400(0. 094)
5. 200(0. 205)
5. 400( 0. 213)
0. 450(0. 018)
0. 550( 0. 022)
9.000(0.354)
9.400(0.370)
5.950 (0.234)
6.250 (0.246)
0.950(0.037)
1.250(0.049)
TO-251
0. 640 (0.025 )
0. 740 (0.029 )
4.430 (0. 174)
4.730 ( 0. 186 )
0. 450(0. 018)
0. 550(0. 022)
2. 240(0. 088 )
2. 340(0.092)
0.950(0.037)
1.150(0.045)
Aug. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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