BCP54...BCP56 NPN Silicon AF Transistors For AF driver and output stages 4 High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) 3 2 1 Type Marking Pin Configuration BCP54 BCP 54 1=B 2=C 3=E 4=C SOT223 BCP54-10 BCP 54-10 1 = B 2=C 3=E 4=C SOT223 BCP54-16 BCP 54-16 1 = B 2=C 3=E 4=C SOT223 BCP55 BCP 55 1=B 2=C 3=E 4=C SOT223 BCP55-10 BCP 55-10 1 = B 2=C 3=E 4=C SOT223 BCP55-16 BCP 55-16 1 = B 2=C 3=E 4=C SOT223 BCP56 BCP 56 1=B 2=C 3=E 4=C SOT223 BCP56-10 BCP 56-10 1 = B 2=C 3=E 4=C SOT223 BCP56-16 BCP 56-16 1 = B 2=C 3=E 4=C SOT223 1 VPS05163 Package Nov-29-2001 BCP54...BCP56 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCP54 BCP55 BCP56 VCEO 45 60 80 Collector-emitter voltage RBE 1k VCER 45 60 100 Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg 1 V A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP54...BCP56 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP54 45 - - BCP55 60 - - BCP56 80 - - BCP54 45 - - BCP55 60 - - BCP56 100 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 µA hFE 25 - - BCP54...56 40 - 250 hFE-grp.10 63 100 160 hFE-grp.16 100 160 250 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V hFE DC current gain 1) hFE IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test: t ≤=300µs, D = 2% 3 Nov-29-2001 BCP54...BCP56 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 1800 mA fT BCP 54...56 EHP00267 MHz 1500 5 1350 IF 1200 1050 10 2 900 750 5 600 450 300 150 0 0 15 30 45 60 75 90 105 120 °C 10 1 10 0 150 5 10 1 5 10 2 TS mA ΙC DC current gain hFE = f (IC ) Collector cutoff current ICBO = f (T A) VCE = 2V VCB = 30V 10 3 h FE BCP 54...56 EHP00268 10 4 5 Ι CBO BCP 54...56 EHP00269 nA max 10 3 10 2 10 3 100 C 25 C -50 C 10 2 5 typ 10 1 10 1 5 10 0 0 10 10 0 10 1 10 2 10 3 mA 10 ΙC 10 -1 4 0 50 100 C 150 TA 4 Nov-29-2001 BCP54...BCP56 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 4 ΙC BCP 54...56 EHP00270 10 4 ΙC mA EHP00271 mA 10 3 10 3 100 C 25 C -50 C 10 2 100 C 25 C -50 C 10 2 10 1 10 1 10 0 BCP 54...56 0 0.2 0.4 0.6 0.8 V 10 0 1.2 0 0.2 0.4 0.6 V 0.8 V CEsat V BEsat Permissible pulse load Ptotmax / PtotDC = f (tp ) 5 BCP 54...56 Ptot max Ptot DC EHP00272 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Nov-29-2001