CHENMKO ENTERPRISE CO.,LTD CHT8050PT SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . .019 (0.50) * D805 * E805 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10) (1) (3) (2) .055 (1.40) .047 (1.20) .028 (0.70) .020 (0.50) .007 (0.177) .045 (1.15) .033 (0.85) C (3) CIRCUIT .103 (2.64) .086 (2.20) .002 (0.05) CONSTRUCTION * NPN transistors in one package. .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 (1) B E(2) SOT-23 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 700 mA Ptot total power dissipation − 225 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2008-01 RATING CHARACTERISTIC CURVES ( CHT8050PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciped. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage CONDITIONS IC = -10uA ; IE = 0A IC = -1mA ; IB = 0A MIN. 25 20 − MAX. V UNIT − V V(BR)EBO emitter-base breakdown voltage IE = -10uA ; IC = 0A 5 − V ICBO collector cut-off current IEBO emitter cut-off current VCB = 20V VEB = 5V − − 1.0 100 uA nA 150 500 hFE DC current gain IC = 150 mA; VCE = 1V VCEsat collector-emitter saturation IC = 500 mA; IB = 50 mA − 500 mV VBEon base-emitter voltage IC = 150 mA; VCE = 1.0V − 1000 mV Ccb output capacitance VCB=-10V; f=1.0MHZ; IE=0 − 10 pF fT transition frequency VCB=10V; Ic=20mA; f=100MHz 150 − MHz 2. hFE: D Classification: 150~300 E Classification: 250~500 RATING CHARACTERISTIC CURVES ( CHT8050PT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current 10000 IC/IB=10 BASE-EMITTER SATURATION VOLTAGE, VBEsat(V) COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 10000 Figure 2. Base-Emitter Saturation Voltage vs Collector Current 1000 Ta = 25oC 100 10 0.1 1.0 10 100 1000 10000 COLLECTOR CURRENT, IC(A) DC CURRENT GAIN, hFE VCE=1.0V 100 10 0.1 1.0 10 100 1000 COLLECTOR CURRENT, IC(A) 1000 Ta = 25oC 100 10 0.1 1.0 10 100 COLLECTOR CURRENT, IC(A) Figure 3. DC Current Gain 1000 IC/IB=10 10000 1000 10000