Chenmko CHT8050PT Epitaxial transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT8050PT
SURFACE MOUNT
EPITAXIAL Transistor
VOLTAGE 20 Volts
CURRENT 700 mAmpere
FEATURE
* Small surface mounting type. (SOT-23)
* High DC current .
.019 (0.50)
* D805
* E805
.066 (1.70)
.119 (3.04)
MARKING
.110 (2.80)
.082 (2.10)
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.045 (1.15)
.033 (0.85)
C (3)
CIRCUIT
.103 (2.64)
.086 (2.20)
.002 (0.05)
CONSTRUCTION
* NPN transistors in one package.
.018 (0.30)
.041 (1.05)
.033 (0.85)
SOT-23
(1) B
E(2)
SOT-23
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
700
mA
Ptot
total power dissipation
−
225
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
2008-01
RATING CHARACTERISTIC CURVES ( CHT8050PT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage
CONDITIONS
IC = -10uA ; IE = 0A
IC = -1mA ; IB = 0A
MIN.
25
20
−
MAX.
V
UNIT
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = -10uA ; IC = 0A
5
−
V
ICBO
collector cut-off current
IEBO
emitter cut-off current
VCB = 20V
VEB = 5V
−
−
1.0
100
uA
nA
150
500
hFE
DC current gain
IC = 150 mA; VCE = 1V
VCEsat
collector-emitter saturation
IC = 500 mA; IB = 50 mA
−
500
mV
VBEon
base-emitter voltage
IC = 150 mA; VCE = 1.0V
−
1000
mV
Ccb
output capacitance
VCB=-10V; f=1.0MHZ; IE=0
−
10
pF
fT
transition frequency
VCB=10V; Ic=20mA; f=100MHz
150
−
MHz
2. hFE: D Classification: 150~300
E Classification: 250~500
RATING CHARACTERISTIC CURVES ( CHT8050PT )
Figure 1. Collector-Emitter Saturation
Voltage vs Collector Current
10000
IC/IB=10
BASE-EMITTER SATURATION
VOLTAGE, VBEsat(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCEsat(mV)
10000
Figure 2. Base-Emitter Saturation Voltage
vs Collector Current
1000
Ta = 25oC
100
10
0.1
1.0
10
100
1000
10000
COLLECTOR CURRENT, IC(A)
DC CURRENT GAIN, hFE
VCE=1.0V
100
10
0.1
1.0
10
100
1000
COLLECTOR CURRENT, IC(A)
1000
Ta = 25oC
100
10
0.1
1.0
10
100
COLLECTOR CURRENT, IC(A)
Figure 3. DC Current Gain
1000
IC/IB=10
10000
1000
10000
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