BCD AZ494BP-E1 Pulse-width-modulation control circuit Datasheet

Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
General Description
Features
The AZ494B/D is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control.
·
The AZ494B/D consists of a reference voltage circuit,
two error amplifiers, an on-chip adjustable oscillator, a
dead-time control (DTC) comparator, a pulse-steering
control flip-flop, and an output control circuit. The
AZ494B/D is capable for push-pull or single-ended
output operation, which can be selected through the
output control.
·
AZ494B has 4.95V and AZ494D has 5V reference
voltage respectively. The precision of voltage reference
(VREF) is improved up to ± 1.5% through trimming
and this provides a better output voltage regulation.
The AZ494B/D is available in standard packages of
DIP-16 and SOIC-16.
·
·
·
·
AZ494B/D
Stable 4.95V for AZ494B or 5V for AZ494D Reference Voltage Trimmed to ±1.5% Accuracy
Uncommitted Output TR for 200mA Sink or
Source Current
Single-End or Push-Pull Operation Selected by
Output Control
Internal Circuitry Prohibits Double Pulse at Either
Output
Complete PWM Control Circuit with Variable
Duty Cycle
On-Chip Oscillator with Master or Slave Operation
Applications
·
·
·
SMPS
Back Light Inverter
Charger
DIP-16
SOIC-16
Figure 1. Package Types of AZ494B/D
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
1
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Pin Configuration
M / P Package
(SOIC-16 / DIP-16)
1IN +
1
16
2IN +
1IN -
2
15
2IN -
FEEDBACK
3
14
REF
DTC
4
13
OUTPUT CTRL
CT
5
12
VCC
RT
6
11
C2
GND
7
10
E2
C1
8
9
E1
Figure 2. Pin Configuration of AZ494B/D (Top View)
Output Function Control Table
Signal for Output Control
Output Function
VI = GND
Single-ended or parallel output
VI = VREF
Normal push-pull operation
Functional Block Diagram
OUTPUT CTRL
RT
CT
6
5
8
13
Oscillator
Pulse-Steering
Flip-Flop
Q1
Dead-Time Control
Comparator
DTC
9
D
4
+
11
CK
0.12V
Error Amplifier 1
1IN +
1IN -
1
+
10
PWM
Comparator
FEEDBACK
E2
2
12
2IN -
E1
C2
Q2
+
Error Amplifier 2
2IN +
C1
16
+
14
Reference
Regulator
15
0.7mA
7
VCC
REF
GND
3
Figure 3. Functional Block Diagram of AZ494B/D
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
2
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Ordering Information
AZ494
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-16
P: DIP-16
Reference Voltage
B: 4.95V
D: 5.0V
Package
Temperature
Range
SOIC-16
-40 to 85oC
DIP-16
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ494BM
AZ494BM-E1
AZ494BM
AZ494BM-E1
Tube
AZ494BMTR
AZ494BMTR-E1
AZ494BM
AZ494BM-E1
Tape & Reel
AZ494DM
AZ494DM-E1
AZ494DM
AZ494DM-E1
Tube
AZ494DMTR
AZ494DMTR-E1
AZ494DM
AZ494DM-E1
Tape & Reel
AZ494BP
AZ494BP-E1
AZ494BP
AZ494BP-E1
Tube
AZ494DP
AZ494DP-E1
AZ494DP
AZ494DP-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
3
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage (Note 2)
VCC
40
V
Amplifier Input Voltage
VI
-0.3 to VCC + 0.3
V
Collector Output Voltage
VO
40
V
Collector Output Current
IO
250
mA
Package Thermal Impedance
(Note 3)
θJA
M Package
73
P Package
67
Lead Temperature 1.6mm from case for 10 seconds
Storage Temperature Range
TSTG
ESD rating (Machine Model)
oC/W
260
oC
-65 to 150
oC
200
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA ) / θJA. Operating at the absolute maximum TJ
of 150oC can affect reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
VCC
7
36
V
Amplifier Input Voltage
VI
-0.3
VCC - 2
V
Collector Output Voltage
VO
36
V
200
mA
Supply Voltage
Collector Output Current
(Each Transistor)
Current Into Feedback Terminal
0.3
mA
300
KHz
0.47
10000
nF
RT
1.8
500
KΩ
TA
-40
85
oC
10
mA
Oscillator Frequency
fosc
Timing Capacitor
CT
Timing Resistor
Operating Free-Air Temperature
Reference Output Current
IREF
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
4
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Electrical Characteristics
TA = 25oC, VCC=15V, f=10KHz unless otherwise noted.
Parameter
Symbol
Conditions (Note 4)
Min
Typ
Max
Unit
for AZ494B
VREF
IREF=1mA
4.875
4.95
5.025
V
for AZ494D
VREF
IREF=1mA
4.925
5.0
5.075
V
Line Regulation
RLINE
VCC = 7V to 36V
2
25
mV
Load Regulation
RLOAD
IREF=1mA to 10mA
1
15
mV
VREF = 0V
25
mA
10
KHz
100
Hz/KHz
1
Hz/KHz
Reference Section
Output Reference
Voltage
Short-Circuit Output Current(Note 5)
ISC
Oscillator Section, CT = 0.01µF, RT = 12KΩ (See Figure 4)
Frequency
fosc
Standard Deviation of Frequency
(Note 6)
All values of VCC, CT, RT and TA
constant
Frequency Change with Voltage
VCC=7V to 36V, TA = 25oC
Frequency Change with Temperature
(Note 7)
∆TA= MIN to MAX
10
Hz/KHz
Error-Amplifier Section
Input Offset Voltage
VIO
VO (FEEDBACK) = 2.5V
2
10
mV
Input Offset Current
IIO
VO (FEEDBACK) = 2.5V
25
250
nA
Input Bias Current
IBIAS
VO (FEEDBACK) = 2.5V
0.2
1
µA
Common-Mode Input Voltage Range
VCM
VCC=7V to 36V
VCC2
V
Large-Signal
Gain
AVO
∆VO = 3V, RL =2KΩ,
VO =0.5V to 3.5V
Open-Loop
Voltage
Unity-Gain Bandwidth
-0.3
70
GB
Common-Mode Rejection Ratio
Output Sink Current (FEEDBACK)
Output Source Current (FEEDBACK)
CMRR
ISINK
ISOURCE
95
dB
800
KHz
VCC=7V to 36V
65
80
dB
VID = -15mV to -5V,
V(FEEDBACK) = 0.7V
- 0.3
- 0.7
mA
VID = 15mV to 5V, V(FEEDBACK) = 3.5V
2
mA
Output Section
Collector Off-State Current
IC, OFF
VCE = 36V, VCC=36V
Emitter Off-State Current
IE, OFF
VCC = VC = 36V, VE = 0
Collector-Emitter
Saturation Voltage
2
100
µA
-100
µA
V
Common
Emitter
VE = 0, IC =200mA
1.1
1.3
Emitter
Follower
VO (C1 or C2) = 15V,
IE = -200mA
1.5
2.5
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
5
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions (Note 4)
Min
Typ
VI = VREF
Output Control Input Current
Max
Unit
3.5
mA
-10
µA
Dead-Time Control Section
Input Bias Current
VI = 0 to 5.25V
-2
Maximum Duty Cycle,
Each Output
VI (DEAD-TIME CTRL) = 0, CT
=0.01µF, RT =12KΩ
45
Input Threshold Voltage
Zero Duty Cycle
3
3.3
V
4
4.5
V
Maximum Duty Cycle
%
0
PWM Comparator Section (See Figure 4)
Input Threshold Voltage (FEEDBACK)
Zero duty cycle
Input Sink Current (FEEDBACK)
V(FEEDBACK) = 0.7V
-0.3
-0.7
mA
Total Device
Standby Supply Current
ISTDBY
Average Supply Current
VRT=VREF,
All VCC = 15V
other inputs and V = 36V
CC
outputs open
6
10
9
15
mA
VI (DEAD-TIME-CTRL) =2V
See Figure 4.
7.5
mA
Common-emitter Configuration
See Figure 6
100
200
ns
25
100
ns
Emitter-follower Configuration
See Figure 7
100
200
ns
40
100
ns
Switching Characteristics
Rise Time
tr
Fall Time
tf
Rise Time
tr
Fall Time
tf
Note 4: For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating
conditions.
Note 5: Duration of the short circuit should not exceed one second.
Note 6: Standard deviation is a measure of the statistical distribution about the mean as derived from the formula:
Note 7: Temperature coefficient of timing capacitor and timing resistor are not taken into account.
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
6
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Parametr Measurement information
VCC = 15V
12
4
Test
Inputs
3
12KΩ 6
5
VCC
C1
DTC
FEEDBACK
E1
RT
C2
CT
E2
8
150Ω
4W
150Ω
4W
Output 1
9
11
Output 2
10
0.01µF 1
1IN+
2
16
15
13
1IN2IN+
2INOUTPUT
CTRL
GND
REF
14
50KΩ
7
Test Circuit
Voltage
at C1
VCC
Voltage
at C2
VCC
0V
0V
Voltage
at CT
Threshold Voltage
DTC
0V
Threshold Voltage
FEEDBACK
0.7V
Duty Cycle
0%
0%
MAX
Voltage Waveforms
Figure 4. Operational Test Circuit and Waveforms
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
7
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Parametr Measurement information (Continued)
Amplifier Under Test
+
VI
FEEDBACK
+
Vref
Other Amplifier
Figure 5. Error Amplifier Characteristics
15V
68Ω
4W
Each Output
Circuit
tf
Output
tr
90%
90%
CL = 15pF
(See Note A)
10%
10%
Note A: CL includes probe and jig capacitance.
Figure 6. Common-Emitter Configuration
15V
Each Output
Circuit
90%
90%
Output
CL = 15pF
(See Note A)
10%
10%
68Ω
4W
tr
tf
Note A: CL includes probe and jig capacitance.
Figure 7. Emitter-Follower Configuration
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
8
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Typical Performance Characteristics
100k
VCC=15V
Oscillator Frequency (Hz)
0.001µF
o
TA=25 C
10k
0.01µF
1k
0.1µF
CT=1µF
100
10
1k
10k
100k
1M
Timing Resistance (Ω)
Figure 8. Oscillator Frequency vs. RT and CT
100
VCC=15V
∆VO=3V
90
Voltage Gain (dB)
80
o
TA=25 C
70
60
50
40
30
20
10
0
1
10
100
1k
10k
100k
1M
Frequency(Hz)
Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
9
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Mechanical Dimensions
SOIC-16
1.000(0.039)
1.300(0.051)
Unit: mm(inch)
1.650(0.065)
0.700(0.028)
7°
0.406(0.016)
φ 2.000(0.079)
Depth 0.060(0.002)
0.100(0.004)
7°
B
A
20:1
0.250(0.010)
0.500(0.020)
10.000(0.394)
1°
5°
R0.200(0.008)
R0.200(0.008)
0.150(0.006)
0.250(0.010)
0.203(0.008)
6.040(0.238)
3.940(0.155)
8°
9.5
°
0.200(0.008)
S φ1.000(0.039)
8°
8°
C-C
50:1
B
20:1
C
3°
7°
0.250(0.010)
0.200(0.008)MIN
Depth 0.200(0.008)
A
0.400(0.016)×45°
1.000(0.039)
1.270(0.050)
0.600(0.024)
C
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
10
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Mechanical Dimensions (Continued)
DIP-16
Unit: mm(inch)
7.620(0.300)TYP
6°
3.710(0.146)
4.310(0.170)
5°
6°
1.524(0.060)TYP
3.200(0.126)
3.600(0.142)
4°
4°
2.540(0.100) 0.510(0.020)MIN
TYP
Φ3.000(0.118)
Depth
0.050(0.002)
0.150(0.006)
0.204(0.008)
0.360(0.014)
0.254(0.010)
0.360(0.014)
0.560(0.022)
0.700(0.028)
8.200(0.323)
9.400(0.370)
3.000(0.118)
3.600(0.142)
6.200(0.244)
6.600(0.260)
18.800(0.740)
19.200(0.756)
R0.750(0.030)
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 1
11
http://www.bcdsemi.com
BCD Semiconductor Corporation
3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A
Tel: +1-408-988 6388, Fax: +1-408-988 6386
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, PRC
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Advanced Analog Circuits (Shanghai) Corporation
8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1 Rui Guang Road, Nei-Hu District, Taipei, Taiwan
Tel: +886-2-2656-2808, Fax: +886-2-2656-2806
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for
use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any
liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
Similar pages