Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description Features The AZ494B/D is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. · The AZ494B/D consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The AZ494B/D is capable for push-pull or single-ended output operation, which can be selected through the output control. · AZ494B has 4.95V and AZ494D has 5V reference voltage respectively. The precision of voltage reference (VREF) is improved up to ± 1.5% through trimming and this provides a better output voltage regulation. The AZ494B/D is available in standard packages of DIP-16 and SOIC-16. · · · · AZ494B/D Stable 4.95V for AZ494B or 5V for AZ494D Reference Voltage Trimmed to ±1.5% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator with Master or Slave Operation Applications · · · SMPS Back Light Inverter Charger DIP-16 SOIC-16 Figure 1. Package Types of AZ494B/D BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 1 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Pin Configuration M / P Package (SOIC-16 / DIP-16) 1IN + 1 16 2IN + 1IN - 2 15 2IN - FEEDBACK 3 14 REF DTC 4 13 OUTPUT CTRL CT 5 12 VCC RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 Figure 2. Pin Configuration of AZ494B/D (Top View) Output Function Control Table Signal for Output Control Output Function VI = GND Single-ended or parallel output VI = VREF Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT 6 5 8 13 Oscillator Pulse-Steering Flip-Flop Q1 Dead-Time Control Comparator DTC 9 D 4 + 11 CK 0.12V Error Amplifier 1 1IN + 1IN - 1 + 10 PWM Comparator FEEDBACK E2 2 12 2IN - E1 C2 Q2 + Error Amplifier 2 2IN + C1 16 + 14 Reference Regulator 15 0.7mA 7 VCC REF GND 3 Figure 3. Functional Block Diagram of AZ494B/D BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 2 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Ordering Information AZ494 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Package M: SOIC-16 P: DIP-16 Reference Voltage B: 4.95V D: 5.0V Package Temperature Range SOIC-16 -40 to 85oC DIP-16 Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ494BM AZ494BM-E1 AZ494BM AZ494BM-E1 Tube AZ494BMTR AZ494BMTR-E1 AZ494BM AZ494BM-E1 Tape & Reel AZ494DM AZ494DM-E1 AZ494DM AZ494DM-E1 Tube AZ494DMTR AZ494DMTR-E1 AZ494DM AZ494DM-E1 Tape & Reel AZ494BP AZ494BP-E1 AZ494BP AZ494BP-E1 Tube AZ494DP AZ494DP-E1 AZ494DP AZ494DP-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 3 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage (Note 2) VCC 40 V Amplifier Input Voltage VI -0.3 to VCC + 0.3 V Collector Output Voltage VO 40 V Collector Output Current IO 250 mA Package Thermal Impedance (Note 3) θJA M Package 73 P Package 67 Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range TSTG ESD rating (Machine Model) oC/W 260 oC -65 to 150 oC 200 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA ) / θJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit VCC 7 36 V Amplifier Input Voltage VI -0.3 VCC - 2 V Collector Output Voltage VO 36 V 200 mA Supply Voltage Collector Output Current (Each Transistor) Current Into Feedback Terminal 0.3 mA 300 KHz 0.47 10000 nF RT 1.8 500 KΩ TA -40 85 oC 10 mA Oscillator Frequency fosc Timing Capacitor CT Timing Resistor Operating Free-Air Temperature Reference Output Current IREF BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 4 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Electrical Characteristics TA = 25oC, VCC=15V, f=10KHz unless otherwise noted. Parameter Symbol Conditions (Note 4) Min Typ Max Unit for AZ494B VREF IREF=1mA 4.875 4.95 5.025 V for AZ494D VREF IREF=1mA 4.925 5.0 5.075 V Line Regulation RLINE VCC = 7V to 36V 2 25 mV Load Regulation RLOAD IREF=1mA to 10mA 1 15 mV VREF = 0V 25 mA 10 KHz 100 Hz/KHz 1 Hz/KHz Reference Section Output Reference Voltage Short-Circuit Output Current(Note 5) ISC Oscillator Section, CT = 0.01µF, RT = 12KΩ (See Figure 4) Frequency fosc Standard Deviation of Frequency (Note 6) All values of VCC, CT, RT and TA constant Frequency Change with Voltage VCC=7V to 36V, TA = 25oC Frequency Change with Temperature (Note 7) ∆TA= MIN to MAX 10 Hz/KHz Error-Amplifier Section Input Offset Voltage VIO VO (FEEDBACK) = 2.5V 2 10 mV Input Offset Current IIO VO (FEEDBACK) = 2.5V 25 250 nA Input Bias Current IBIAS VO (FEEDBACK) = 2.5V 0.2 1 µA Common-Mode Input Voltage Range VCM VCC=7V to 36V VCC2 V Large-Signal Gain AVO ∆VO = 3V, RL =2KΩ, VO =0.5V to 3.5V Open-Loop Voltage Unity-Gain Bandwidth -0.3 70 GB Common-Mode Rejection Ratio Output Sink Current (FEEDBACK) Output Source Current (FEEDBACK) CMRR ISINK ISOURCE 95 dB 800 KHz VCC=7V to 36V 65 80 dB VID = -15mV to -5V, V(FEEDBACK) = 0.7V - 0.3 - 0.7 mA VID = 15mV to 5V, V(FEEDBACK) = 3.5V 2 mA Output Section Collector Off-State Current IC, OFF VCE = 36V, VCC=36V Emitter Off-State Current IE, OFF VCC = VC = 36V, VE = 0 Collector-Emitter Saturation Voltage 2 100 µA -100 µA V Common Emitter VE = 0, IC =200mA 1.1 1.3 Emitter Follower VO (C1 or C2) = 15V, IE = -200mA 1.5 2.5 BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 5 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Electrical Characteristics (Continued) Parameter Symbol Conditions (Note 4) Min Typ VI = VREF Output Control Input Current Max Unit 3.5 mA -10 µA Dead-Time Control Section Input Bias Current VI = 0 to 5.25V -2 Maximum Duty Cycle, Each Output VI (DEAD-TIME CTRL) = 0, CT =0.01µF, RT =12KΩ 45 Input Threshold Voltage Zero Duty Cycle 3 3.3 V 4 4.5 V Maximum Duty Cycle % 0 PWM Comparator Section (See Figure 4) Input Threshold Voltage (FEEDBACK) Zero duty cycle Input Sink Current (FEEDBACK) V(FEEDBACK) = 0.7V -0.3 -0.7 mA Total Device Standby Supply Current ISTDBY Average Supply Current VRT=VREF, All VCC = 15V other inputs and V = 36V CC outputs open 6 10 9 15 mA VI (DEAD-TIME-CTRL) =2V See Figure 4. 7.5 mA Common-emitter Configuration See Figure 6 100 200 ns 25 100 ns Emitter-follower Configuration See Figure 7 100 200 ns 40 100 ns Switching Characteristics Rise Time tr Fall Time tf Rise Time tr Fall Time tf Note 4: For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. Note 5: Duration of the short circuit should not exceed one second. Note 6: Standard deviation is a measure of the statistical distribution about the mean as derived from the formula: Note 7: Temperature coefficient of timing capacitor and timing resistor are not taken into account. BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 6 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Parametr Measurement information VCC = 15V 12 4 Test Inputs 3 12KΩ 6 5 VCC C1 DTC FEEDBACK E1 RT C2 CT E2 8 150Ω 4W 150Ω 4W Output 1 9 11 Output 2 10 0.01µF 1 1IN+ 2 16 15 13 1IN2IN+ 2INOUTPUT CTRL GND REF 14 50KΩ 7 Test Circuit Voltage at C1 VCC Voltage at C2 VCC 0V 0V Voltage at CT Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% 0% MAX Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 7 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Parametr Measurement information (Continued) Amplifier Under Test + VI FEEDBACK + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 15V 68Ω 4W Each Output Circuit tf Output tr 90% 90% CL = 15pF (See Note A) 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 15V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 10% 10% 68Ω 4W tr tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 8 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Typical Performance Characteristics 100k VCC=15V Oscillator Frequency (Hz) 0.001µF o TA=25 C 10k 0.01µF 1k 0.1µF CT=1µF 100 10 1k 10k 100k 1M Timing Resistance (Ω) Figure 8. Oscillator Frequency vs. RT and CT 100 VCC=15V ∆VO=3V 90 Voltage Gain (dB) 80 o TA=25 C 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency(Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 9 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Mechanical Dimensions SOIC-16 1.000(0.039) 1.300(0.051) Unit: mm(inch) 1.650(0.065) 0.700(0.028) 7° 0.406(0.016) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) 7° B A 20:1 0.250(0.010) 0.500(0.020) 10.000(0.394) 1° 5° R0.200(0.008) R0.200(0.008) 0.150(0.006) 0.250(0.010) 0.203(0.008) 6.040(0.238) 3.940(0.155) 8° 9.5 ° 0.200(0.008) S φ1.000(0.039) 8° 8° C-C 50:1 B 20:1 C 3° 7° 0.250(0.010) 0.200(0.008)MIN Depth 0.200(0.008) A 0.400(0.016)×45° 1.000(0.039) 1.270(0.050) 0.600(0.024) C BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 10 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ494B/D Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) 7.620(0.300)TYP 6° 3.710(0.146) 4.310(0.170) 5° 6° 1.524(0.060)TYP 3.200(0.126) 3.600(0.142) 4° 4° 2.540(0.100) 0.510(0.020)MIN TYP Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.204(0.008) 0.360(0.014) 0.254(0.010) 0.360(0.014) 0.560(0.022) 0.700(0.028) 8.200(0.323) 9.400(0.370) 3.000(0.118) 3.600(0.142) 6.200(0.244) 6.600(0.260) 18.800(0.740) 19.200(0.756) R0.750(0.030) BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 1 11 http://www.bcdsemi.com BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Advanced Analog Circuits (Shanghai) Corporation 8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor (Taiwan) Company Limited 4F, 298-1 Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656-2808, Fax: +886-2-2656-2806 IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.