PHILIPS BUT12F Silicon diffused power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
BUT12F; BUT12AF
PINNING
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 plastic
package.
PIN
1
base
2
collector
3
emitter
mb
APPLICATIONS
DESCRIPTION
mounting base; electrically isolated from all pins
• Converters
• Inverters
handbook, halfpage
• Switching regulators
2
handbook, halfpage
• Motor control systems.
1
MBB008
1 2 3
3
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
PARAMETER
collector-emitter peak voltage
CONDITIONS
MAX.
UNIT
VBE = 0
BUT12F
850
V
BUT12AF
1000
V
BUT12F
400
V
BUT12AF
450
V
1.5
V
BUT12F
6
A
BUT12AF
5
A
collector-emitter voltage
VCEsat
collector-emitter saturation voltage
ICsat
collector saturation current
open base
see Figs 7 and 9
IC
collector current (DC)
see Figs 2 and 4
8
A
ICM
collector current (peak value)
see Fig.2
20
A
Ptot
total power dissipation
Th ≤ 25 °C; see Fig.3
23
W
tf
fall time
resistive load; see Figs 11 and 12
0.8
µs
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to external heatsink note 1
5.5
K/W
note 2
3.9
K/W
55
K/W
MAX.
UNIT
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCESM
VCEO
ICsat
PARAMETER
CONDITIONS
collector-emitter peak voltage
MIN.
VBE = 0
BUT12F
−
850
V
BUT12AF
−
1000
V
BUT12F
−
400
V
BUT12AF
−
450
V
−
6
A
collector-emitter voltage
open base
collector saturation current
BUT12F
−
5
A
IC
collector current (DC)
see Figs 2 and 4
−
8
A
ICM
collector current (peak value)
see Fig.2
−
20
A
IB
base current (DC)
−
4
A
IBM
base current (peak value)
−
6
A
Ptot
total power dissipation
−
23
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
BUT12AF
Th ≤ 25 °C; see Fig.3; note 1
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VisolM
isolation voltage from all terminals to external heatsink (peak value)
−
1500
V
Cisol
isolation capacitance from collector to external heatsink
−
12
pF
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VCEOsust
PARAMETER
CONDITIONS
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
see Figs 5 and 6
BUT12F
BUT12AF
VCEsat
VBEsat
ICES
MIN.
TYP.
MAX.
UNIT
400
−
−
V
450
−
−
V
collector-emitter saturation voltage
BUT12F
IC = 6 A; IB = 1.2 A; see
Figs 7 and 9
−
−
1.5
V
BUT12AF
IC = 5 A; IB = 1 A; see
Figs 7 and 9
−
−
1.5
V
BUT12F
IC = 6 A; IB = 1.2 A; see Fig.7
−
−
1.5
V
BUT12AF
IC = 5 A; IB = 1 A; see Fig.7
−
−
1.5
V
VCE = VCESMmax; VBE = 0; note 1
−
−
1
mA
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
−
−
3
mA
−
−
10
mA
base-emitter saturation voltage
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
hFE
DC current gain
VCE = 5 V; IC = 10 mA; see Fig.10 10
18
35
VCE = 5 V; IC = 1 A; see Fig.10
10
20
35
BUT12F
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
1
µs
BUT12AF
ICon = 5 A; IBon = −IBoff = 1 A
−
−
1
µs
BUT12F
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
4
µs
BUT12AF
ICon = 5 A; IBon = −IBoff = 1 A
−
−
4
µs
BUT12F
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
0.8
µs
BUT12AF
ICon = 5 A; IBon = −IBoff = 1 A
−
−
0.8
µs
BUT12F
ICon = 6 A; IBon = 1.2 A;
VCL = 250 V; Tc = 100 °C
−
1.9
2.5
µs
BUT12AF
ICon = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
−
1.9
2.5
µs
BUT12F
ICon = 6 A; IBon = 1.2 A;
VCL = 250 V; Tc = 100 °C
−
200
300
ns
BUT12AF
ICon = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
−
200
300
ns
Switching times resistive load (see Fig.12)
ton
ts
tf
turn-on time
storage time
fall time
Switching times inductive load (see Fig.14)
ts
tf
storage time
fall time
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BUT12F; BUT12AF
MGB935
102
IC
(A)
ICM max
IC max
10
II
1
I
10−1
DC
10−2
BUT12F
BUT12AF
10−3
10−4
1
10
102
103
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
VCE (V)
104
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGK674
MGB892
10
120
handbook,
halfpage
handbook, halfpage
Ptot max
IC
(A)
(%)
80
5
40
BUT12F
BUT12AF
0
0
0
50
100
Th (oC)
0
150
400
800
VCE (V) 1200
VBE = −1 to −5 V; Tmb = 100 °C.
Fig.3 Power derating curve.
handbook, halfpage
Fig.4 Reverse bias SOAR.
handbook,IC
halfpage
+ 50 V
MGE239
(mA)
100 to 200 Ω
250
L
200
horizontal
oscilloscope
100
vertical
6V
30 to 60 Hz
Fig.5
1997 Aug 13
300 Ω
1Ω
0
MGE252
Test circuit for collector-emitter
sustaining voltage.
Fig.6
5
VCE (V)
min
VCEOsust
Oscilloscope display for collector-emitter
sustaining voltage.
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB914
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
1.0
(1)
(2)
0.5
(3)
(4)
0
10−1
IC/IB = 5.
10
1
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
102
IC (A)
(3) VCE; Tj = 100 °C.
(4) VCE; Tj = 25 °C.
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.
MGB911
1.6
handbook, full pagewidth
VBE
(V)
1.4
(1)
1.2
(2)
(3)
1.0
0.8
0
Tj = 25 °C.
(1) IC = 8 A.
0.5
1
1.5
2
2.5
(2) IC = 6 A.
(3) IC = 3 A.
Fig.8 Base-emitter voltage as a function of collector current; typical values.
1997 Aug 13
6
IB (A)
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB872
10
(1)
(2)
MBC096
102
handbook, halfpage
handbook, halfpage
(3)
VCEsat
hFE
(V)
VCE = 5 V
1V
10
1
10−1
10−2
10−1
1
IB (A)
1
10−2
10
10−1
1
10
2
IC (A) 10
(1) IC = 3 A.
(2) IC = 6 A.
(3) IC = 8 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9
Collector-emitter saturation voltage as a
function of base current.
Fig.10 DC current gain; typical values.
handbook, halfpage
MBB731
tr ≤30 ns
IB on
90%
IB
10%
VCC
handbook, halfpage
t
IB off
RL
VIM
RB
0
D.U.T.
tp
T
IC on
90%
IC
MGE244
10%
ton
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
ts
tr ≤ 20 ns.
Fig.12 Switching time waveforms with
resistive load.
Fig.11 Test circuit resistive load.
1997 Aug 13
tf
7
t
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, halfpage
tr
IB on
90%
IB
10%
VCC
handbook, halfpage
t
LC
+IB
−IB off
VCL
LB
D.U.T.
IC on
90%
−VBE
MGE246
IC
10%
ts
toff
VCL = up to 1000 V; VCC = 30 V; VBE = −1 to −5 V; LB = 1 µH;
LC = 200 µH.
Fig.13 Test circuit inductive load and reverse
bias SOAR.
1997 Aug 13
t
tf
MGE238
Fig.14 Switching times waveforms with
inductive load.
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E1
A
P
A1
m
q
D1
D
L1
Q
b1
L
L2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
E1
e
e1
L
L1(1)
L2
m
P
Q
q
w
mm
4.4
4.0
2.9
2.5
0.9
0.7
1.5
1.3
0.55
0.38
17.0
16.4
7.9
7.5
10.2
9.6
5.7
5.3
2.54
5.08
14.3
13.5
4.8
4.0
10
0.9
0.5
3.2
3.0
1.4
1.2
4.4
4.0
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT186
1997 Aug 13
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
TO-220
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp11
Date of release: 1997 Aug 13
Document order number:
9397 750 02715
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