DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN 1 base 2 collector 3 emitter mb APPLICATIONS DESCRIPTION mounting base; electrically isolated from all pins • Converters • Inverters handbook, halfpage • Switching regulators 2 handbook, halfpage • Motor control systems. 1 MBB008 1 2 3 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MAX. UNIT VBE = 0 BUT12F 850 V BUT12AF 1000 V BUT12F 400 V BUT12AF 450 V 1.5 V BUT12F 6 A BUT12AF 5 A collector-emitter voltage VCEsat collector-emitter saturation voltage ICsat collector saturation current open base see Figs 7 and 9 IC collector current (DC) see Figs 2 and 4 8 A ICM collector current (peak value) see Fig.2 20 A Ptot total power dissipation Th ≤ 25 °C; see Fig.3 23 W tf fall time resistive load; see Figs 11 and 12 0.8 µs 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to external heatsink note 1 5.5 K/W note 2 3.9 K/W 55 K/W MAX. UNIT thermal resistance from junction to ambient Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat PARAMETER CONDITIONS collector-emitter peak voltage MIN. VBE = 0 BUT12F − 850 V BUT12AF − 1000 V BUT12F − 400 V BUT12AF − 450 V − 6 A collector-emitter voltage open base collector saturation current BUT12F − 5 A IC collector current (DC) see Figs 2 and 4 − 8 A ICM collector current (peak value) see Fig.2 − 20 A IB base current (DC) − 4 A IBM base current (peak value) − 6 A Ptot total power dissipation − 23 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C BUT12AF Th ≤ 25 °C; see Fig.3; note 1 Note 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL PARAMETER TYP. MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V Cisol isolation capacitance from collector to external heatsink − 12 pF 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUT12F BUT12AF VCEsat VBEsat ICES MIN. TYP. MAX. UNIT 400 − − V 450 − − V collector-emitter saturation voltage BUT12F IC = 6 A; IB = 1.2 A; see Figs 7 and 9 − − 1.5 V BUT12AF IC = 5 A; IB = 1 A; see Figs 7 and 9 − − 1.5 V BUT12F IC = 6 A; IB = 1.2 A; see Fig.7 − − 1.5 V BUT12AF IC = 5 A; IB = 1 A; see Fig.7 − − 1.5 V VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 3 mA − − 10 mA base-emitter saturation voltage collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 9 V; IC = 0 hFE DC current gain VCE = 5 V; IC = 10 mA; see Fig.10 10 18 35 VCE = 5 V; IC = 1 A; see Fig.10 10 20 35 BUT12F ICon = 6 A; IBon = −IBoff = 1.2 A − − 1 µs BUT12AF ICon = 5 A; IBon = −IBoff = 1 A − − 1 µs BUT12F ICon = 6 A; IBon = −IBoff = 1.2 A − − 4 µs BUT12AF ICon = 5 A; IBon = −IBoff = 1 A − − 4 µs BUT12F ICon = 6 A; IBon = −IBoff = 1.2 A − − 0.8 µs BUT12AF ICon = 5 A; IBon = −IBoff = 1 A − − 0.8 µs BUT12F ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 °C − 1.9 2.5 µs BUT12AF ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 °C − 1.9 2.5 µs BUT12F ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 °C − 200 300 ns BUT12AF ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 °C − 200 300 ns Switching times resistive load (see Fig.12) ton ts tf turn-on time storage time fall time Switching times inductive load (see Fig.14) ts tf storage time fall time Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 13 3 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUT12F; BUT12AF MGB935 102 IC (A) ICM max IC max 10 II 1 I 10−1 DC 10−2 BUT12F BUT12AF 10−3 10−4 1 10 102 103 Tmb < 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.2 Forward bias SOAR. 1997 Aug 13 4 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF MGK674 MGB892 10 120 handbook, halfpage handbook, halfpage Ptot max IC (A) (%) 80 5 40 BUT12F BUT12AF 0 0 0 50 100 Th (oC) 0 150 400 800 VCE (V) 1200 VBE = −1 to −5 V; Tmb = 100 °C. Fig.3 Power derating curve. handbook, halfpage Fig.4 Reverse bias SOAR. handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.5 1997 Aug 13 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.6 5 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF MGB914 2.0 handbook, full pagewidth VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10−1 IC/IB = 5. 10 1 (1) VBE; Tj = 25 °C. (2) VBE; Tj = 100 °C. 102 IC (A) (3) VCE; Tj = 100 °C. (4) VCE; Tj = 25 °C. Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values. MGB911 1.6 handbook, full pagewidth VBE (V) 1.4 (1) 1.2 (2) (3) 1.0 0.8 0 Tj = 25 °C. (1) IC = 8 A. 0.5 1 1.5 2 2.5 (2) IC = 6 A. (3) IC = 3 A. Fig.8 Base-emitter voltage as a function of collector current; typical values. 1997 Aug 13 6 IB (A) 3 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF MGB872 10 (1) (2) MBC096 102 handbook, halfpage handbook, halfpage (3) VCEsat hFE (V) VCE = 5 V 1V 10 1 10−1 10−2 10−1 1 IB (A) 1 10−2 10 10−1 1 10 2 IC (A) 10 (1) IC = 3 A. (2) IC = 6 A. (3) IC = 8 A. Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.9 Collector-emitter saturation voltage as a function of base current. Fig.10 DC current gain; typical values. handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% VCC handbook, halfpage t IB off RL VIM RB 0 D.U.T. tp T IC on 90% IC MGE244 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. ts tr ≤ 20 ns. Fig.12 Switching time waveforms with resistive load. Fig.11 Test circuit resistive load. 1997 Aug 13 tf 7 t Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF handbook, halfpage tr IB on 90% IB 10% VCC handbook, halfpage t LC +IB −IB off VCL LB D.U.T. IC on 90% −VBE MGE246 IC 10% ts toff VCL = up to 1000 V; VCC = 30 V; VBE = −1 to −5 V; LB = 1 µH; LC = 200 µH. Fig.13 Test circuit inductive load and reverse bias SOAR. 1997 Aug 13 t tf MGE238 Fig.14 Switching times waveforms with inductive load. 8 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E E1 e e1 L L1(1) L2 m P Q q w mm 4.4 4.0 2.9 2.5 0.9 0.7 1.5 1.3 0.55 0.38 17.0 16.4 7.9 7.5 10.2 9.6 5.7 5.3 2.54 5.08 14.3 13.5 4.8 4.0 10 0.9 0.5 3.2 3.0 1.4 1.2 4.4 4.0 0.4 Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 1997 Aug 13 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 9 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137067/00/01/pp11 Date of release: 1997 Aug 13 Document order number: 9397 750 02715