IXYS DSEP2X61-06A Hiperfred epitaxial diode with soft recovery Datasheet

DSEP 2x 61-06A
HiPerFREDTM Epitaxial Diode
IFAV = 2x 60 A
VRRM = 600 V
trr
= 35 ns
with soft recovery
VRSM
VRRM
V
V
600
600
miniBLOC, SOT-227 B
Type
DSEP 2x 61-06A
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 65°C; rectangular, d = 0.5
100
60
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
600
A
EAS
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
0.3
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
-40...+150
150
-40...+150
°C
°C
°C
140
W
●
2500
V~
●
TVJ
TVJM
Tstg
Features
●
●
●
●
●
●
●
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight
typical
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
Applications
●
g
●
●
Symbol
IR
①
VF ②
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
0.65
2.5
mA
mA
IF = 60 A;
1.48
2.01
V
V
0.85
0.1
K/W
K/W
35
ns
TVJ = 125°C
TVJ = 25°C
RthJC
RthCH
trr
IF = 1 A; -di/dt = 300 A/ms;
VR = 30 V; TVJ = 25°C
IRM
VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
8.3
A
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
●
●
●
●
●
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
●
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
912
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 2x 61-06A
4000
160
A
140
IF
80
TVJ= 100°C
VR = 300V
nC
A
3000
120
TVJ= 25°C
60
IF=120A
IF= 60A
IF= 30A
Qr
100
TVJ=100°C
80
TVJ= 100°C
VR = 300V
IRM
2000
40
1000
20
IF=120A
IF= 60A
IF= 30A
TVJ=150°C
60
40
20
0
0
1
2
0
100
V
A/ms 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
140
trr
1.5
Kf
0
400
ms 1000
600 A/
800
-diF/dt
20
1.6
V
VFR
15
µs
tfr
IF=120A
IF= 60A
IF= 30A
110
1.2
VFR
tfr
120
1.0
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
ns
130
0
10
0.8
5
0.4
I RM
100
0.5
Qr
90
0.0
80
0
40
80
120 °C 160
0
TVJ
200
400
800
A/
ms 1000
600
TVJ= 100°C
IF = 60A
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
0.0
ms 1000
600 A/
800
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
0.001
0.0001
0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
s
0.1
1
t
912
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2-2
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