SMD Schottky Barrier Diode SMD Diodes Specialist CDBF54-HF (RoHS Device) Io = 200 mA V R = 30 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Low forward Voltage. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package. Majority carrier conduction. Mechanical data 0.035(0.90) Case: 1005(2512) standard package, molded plastic. 0.027(0.70) 0.020(0.50) Typ. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.012 (0.30) Typ. Marking code: cathode band & BF Mounting position: Any 0.040(1.00) Typ. Weight: 0.006 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power dissipation Symbol Min Typ Max Unit V RM 30 V VR 30 V V R(RMS) 21 V IO 200 mA I FRM 0.3 A I FSM 0.6 A PD 200 mW Storage temperature T STG Junction temperature Tj -65 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA Reverse current Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 V V R = 25V IR 2 uA Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage CT 10 pF Reverse recovery time I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm T rr 5 nS REV:A Page 1 QW-G1019 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF54-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 Reverse current ( A ) 100 10 O 75 C 1u O 25 C C 100n O C 10u -25 O 25 C O 125 75 C 1 O Forward current (mA ) O 125 C 100u O -25 C 0.1 10n 0 0.2 0.4 0.6 0.8 0 5 15 20 30 25 Reverse voltage (V) Forward voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 120 14 Mounting on glass epoxy PCBs f=1MHz O T A =25 C 12 Average forward current(%) Capacitance between terminals ( P F) 10 10 8 6 4 2 100 80 60 40 20 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A Page 2 QW-G1019 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed F/1005 F/1005 SYMBOL A B C d D D1 D2 (mm) 1.55 ± 0.10 2.65 ± 0.10 1.05 ± 0.10 1.55 ± 0.05 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.061 ± 0.004 0.104 ± 0.004 0.041 ± 0.004 0.061 ± 0.002 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.23 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:A Page 3 QW-G1019 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number Marking Code CDBF54-HF BF BF Suggested PAD Layout F/1005 SIZE A (mm) (inch) 2.10 0.083 D A B 1.20 0.047 C 1.20 0.047 E C D 3.30 0.130 E 0.90 0.035 B Standard Package Qty per Reel Reel Size (Pcs) (inch) 4000 7 Case Type F/1005 REV:A Page 4 QW-G1019 Comchip Technology CO., LTD.