BFP843F Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP843F BFP843F, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Revision History: 2013-06-19, Revision 1.0 Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.0, 2013-06-19 BFP843F Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 8 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 9 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 4 11 11 11 12 Revision 1.0, 2013-06-19 BFP843F List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 6-1 Figure 6-2 Figure 6-3 Figure 6-4 Figure 6-5 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Figure 7-5 Figure 7-6 Figure 7-7 Figure 7-8 Figure 7-9 Figure 7-10 Figure 7-11 Figure 7-12 Figure 9-1 Figure 9-2 Figure 9-3 Figure 9-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP843F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP843F: T2s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 15 15 16 16 17 18 18 19 19 20 20 21 21 22 22 23 23 25 25 25 25 Revision 1.0, 2013-06-19 BFP843F List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Table 5-10 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 1.8 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 1.8 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 1.8 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision 1.0, 2013-06-19 BFP843F Product Brief 1 Product Brief The BFP843F is a very low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in an easy to use plastic thin flat package with visible leads. Data Sheet 7 Revision 1.0, 2013-06-19 BFP843F Features 2 • • • • • • • • • • Features Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness Unique combination of high RF performance, robustness and ease of application circuit design Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available Applications As Low Noise Amplifier (LNA) in • • • • • Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA) Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz ISM bands up to 10 GHz Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP843F TSFP-4-1 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E T2s Revision 1.0, 2013-06-19 BFP843F Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage VCEO Values Min. Max. – 2.25 2.0 Unit Note / Test Condition V TA = 25 °C TA = -55 °C Open base 1) Collector emitter voltage VCES – 2.25 2.0 V TA = 25 °C TA = -55 °C E-B short circuited 2) Collector base voltage VCBO – 2.9 2.6 V TA =25 °C TA = -55 °C Open emitter Base current IB -5 5 mA Collector current IC – 55 mA RF input power PRFin – 20 dBm ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation3) Ptot – 125 mW TS ≤ 101 °C Junction temperature TJ – 150 °C Storage temperature TStg -55 150 °C 1) VCES is identical to VCEO due to design 2) VCBO is similar to VCEO due to design 3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.0, 2013-06-19 BFP843F Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 395 – K/W – 1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation). 130 120 110 100 90 Ptot [mW] 80 70 60 50 40 30 20 10 0 0 25 50 75 T [°C] 100 125 150 S Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.0, 2013-06-19 BFP843F Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 Collector emitter leakage current ICES – – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base nA VCE = 1.5 V, VBE = 0 Max. 400 E-B short circuited Collector base leakage current ICBO – – 400 nA VCB = 1.5 V, IE = 0 Open emitter Emitter base leakage current IEBO – – 10 DC current gain hFE 150 260 450 μA VEB = 0.5 V, IC = 0 Open collector VCE = 1.8 V, IC = 15 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol 1) Collector base capacitance CCB Values Min. Typ. Max. – 5.23 0.06 – Unit Note / Test Condition pF f = 1 MHz f = 1 GHz VCB = 1.8 V, VBE = 0 Emitter grounded Collector emitter capacitance CCE – 0.46 – pF f = 1 MHz VCE = 1.8 V, VBE= 0 Base grounded Emitter base capacitance CEB – 0.70 – pF f = 1 MHz VEB = 0.4 V,VCB = 0 Collector grounded 1) Including integrated feedback capacitance Data Sheet 11 Revision 1.0, 2013-06-19 BFP843F Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT C E VB B Bias-T E (Pin 1) IN Figure 5-1 BFP843F Testing Circuit Table 5-3 AC Characteristics, VCE = 1.8 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 25 24.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.8 22.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7 24.5 – – Table 5-4 dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 900 MHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 24.5 24 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.8 22 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm OP1dB OIP3 – – 8 24 12 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.0, 2013-06-19 BFP843F Electrical Characteristics Table 5-5 AC Characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Symbol Values Unit Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 24 23 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.85 21 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7 23 – – Table 5-6 dB dB Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 23.5 22.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.9 20.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7.5 23.5 – – IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 22.5 21.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.95 20 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 15 mA IC = 15 mA AC Characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Table 5-7 Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm OP1dB OIP3 – – 6.5 22.5 13 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.0, 2013-06-19 BFP843F Electrical Characteristics Table 5-8 AC Characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Symbol Values Unit Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 21 19.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.0 18 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6 22 – – Table 5-9 Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 18 16.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.1 15.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 4.5 19.5 – – dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition Table 5-10 AC Characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 13.5 10 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.7 10 – – Linearity 1 dB compression point at output 3rd order intercept point at output dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm OP1dB OIP3 – – 0.5 16.5 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 14 Revision 1.0, 2013-06-19 BFP843F Characteristic DC Diagrams 6 Characteristic DC Diagrams IC [mA] 22 20 80µA 18 70µA 16 60µA 14 50µA 12 40µA 10 30µA 8 20µA 6 4 10µA 2 0 0 0.5 1 1.5 2 2.5 VCE [V] Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 3 hFE 10 2 10 −2 10 −1 10 0 10 Ic [mA] 1 10 2 10 Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V Data Sheet 15 Revision 1.0, 2013-06-19 BFP843F Characteristic DC Diagrams 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V Data Sheet 16 Revision 1.0, 2013-06-19 BFP843F Characteristic DC Diagrams −6 10 −7 10 −8 IB [A] 10 −9 10 −10 10 −11 10 0.3 0.35 0.4 0.45 0.5 0.55 VEB [V] 0.6 0.65 0.7 Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V Data Sheet 17 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 7 Characteristic AC Diagrams 24 22 20 18 OIP3 [dBm] 16 14 12 10 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 8 6 4 2 0 0 5 10 15 20 I [mA] C 25 30 35 Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters 35 4 5 9 10 11 6 7 8 12 14 15 30 13 9 10 11 16 20 21 17 18 19 20 12 14 15 19 21 16 17 20 18 IC [mA] 25 17 18 13 19 20 16 15 10 17 16 1513 14 5 1 17 18 19 18 12 1.2 19 20 20 20 19 1820 18 17 17 16 16 1513 1513 14 14 12 12 1.4 1.6 1.8 VCE [V] 19 2 Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz Data Sheet 18 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 35 −4−3−2 −6 1 2 4 6 5 7 −1 0 1 3 2 6 4 5 30 25 6 5 4 IC [mA] 7 3 20 6 3 5 15 4 3 2 1 10 0 −2 −3 −4 5 −5 1 4 3 2 1 0 −1 −2 −3 −4 −5 1.4 1.2 3 2 1 0 −1 −2 −3 −4 −5 1.6 −1 1.8 2 VCE [V] Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 26 24 22 Gma 20 18 |S21|2 G [dB] 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA Data Sheet 19 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 28 26 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 24 22 20 3.50GHz Gmax [dB] 18 5.50GHz 16 14 12 10.00GHz 12.00GHz 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 I [mA] C Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz 28 26 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 24 Gmax [dB] 22 3.50GHz 20 5.50GHz 18 16 14 10.00GHz 12.00GHz 12 10 0 0.5 1 1.5 V CE 2 2.5 [V] Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz Data Sheet 20 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 1 1.5 0.5 2 0.4 12.0 0.3 3 12.0 11.0 11.0 4 10.0 10.0 0.2 9.0 0.1 5 9.0 0.03 to 12 GHz 8.0 10 7.0 8.0 6.0 0.1 0 7.0 0.2 0.3 0.4 0.5 5.04.0 1 3.0 6.0 1.5 2 3 4 5 1.0 2.0 5.0 −0.1 4.0 −10 1.0 3.0 2.0 0.03 0.03 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8.0mA 15mA −1 Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45 to 10 GHz 0.1 10 0.1 0 0.2 0.3 0.4 0.5 5.5 3.5 2.4 1.9 0.9 1 1.5 0.45 0.45 5.5 2 3 4 5 −0.1 −10 10.0 10.0 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 8mA 15mA Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA Data Sheet 21 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 1 1.5 0.5 2 0.4 12.0 12.0 0.3 11.0 10.0 0.2 3 11.0 4 10.0 5 0.03 to 12 GHz 9.0 9.0 0.1 10 8.0 8.0 0.1 0 0.2 0.3 0.4 0.5 7.0 7.0 6.0 −0.1 1 1.5 2 3 4 5 6.0 1.0 5.0 3.0 2.0 4.0 5.0 4.0 −10 1.0 0.03 3.0 0.03 2.0 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8.0mA 15mA −1 Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 15mA 0.6 IC = 8mA 0.4 0.2 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt Data Sheet 22 Revision 1.0, 2013-06-19 BFP843F Characteristic AC Diagrams 3 f = 10GHz 2.8 2.6 f = 5.5GHz 2.4 f = 3.5GHz 2.2 f = 2.4GHz NFmin [dB] 2 f = 0.9GHz 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz 4 f = 10GHz 3.5 f = 5.5GHz f = 3.5GHz 3 f = 2.4GHz NF50 [dB] 2.5 f = 0.9GHz 2 1.5 1 0.5 0 0 5 10 15 20 25 IC [mA] Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. Data Sheet 23 Revision 1.0, 2013-06-19 BFP843F Simulation Data 8 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP843F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP843F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 24 Revision 1.0, 2013-06-19 BFP843F Package Information TSFP-4-1 9 Package Information TSFP-4-1 1.4 ±0.05 2 10° MAX. 1 3 1.2 ±0.05 0.2 ±0.05 4 0.55 ±0.04 0.8 ±0.05 0.2 ±0.05 0.2 ±0.05 0.15 ±0.05 0.5 ±0.05 0.5 ±0.05 TSFP-4-1, -2-PO V04 Figure 9-1 Package Outline 0.9 0.45 0.35 0.5 0.5 TSFP-4-1, -2-FP V04 Figure 9-2 Package Footprint Figure 9-3 Marking Description (Marking BFP843F: T2s) 0.2 Pin 1 8 1.4 4 0.7 1.55 TSFP-4-1, -2-TP V05 Figure 9-4 Tape dimensions Data Sheet 25 Revision 1.0, 2013-06-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG