BC856S ... BC859S BC856S ... BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 2 2.1 Type Code 1 1.25±0.1 2 3 2.4 Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 Power dissipation Verlustleistung 300 mW Plastic case Kunststoffgehäuse SOT-363 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) per transistor – pro Transistor BC856S BC857S BC858S BC859S Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCBO 65 V 45 V 30 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCEO 80 V 50 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEB0 5V Power dissipation – Verlustleistung Ptot 300 mW 1) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) per transistor – pro Transistor Min. Typ. Max. hFE hFE – 110 90 ... 270 – – 800 Small signal current gain – Kleinsignal-Stromverstärkung hfe – 220 ... 600 – Input impedance – Eingangs-Impedanz hie 1.6 kΩ – 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 µS – 110 µS Reverser voltage transfer ratio – Spannungsrückwirkung hre – 1.5 ... 3*10-4 – DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856S ... BC859S Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) per transistor – pro Transistor Min. Typ. Max. - VCEsat - VCEsat – – 90 mV 200 mV 250 mV 600 mV - VBEsat - VBEsat – – 700 mV 900 mV – – - VBE - VBE 600 mV – 650 mV – 750 mV 820 mV - ICB0 - ICB0 – – – – 15 nA 5 µA - IEB0 – – 100 nA fT 100 MHz – – CCBO – – 6 pF CEB0 – 10 pF – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren RthA < 420 K/W 1) BC846S ... BC849S Pinning – Anschlussbelegung 6 T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5 2 4 T2 T1 1 2 1 5 2 3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG