AP02N60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Repetitive Avalanche Rated ▼ Fast Switching G ▼ Simple Drive Requirement ▼ RoHS Compliant BVDSS 600V RDS(ON) 8Ω ID 1.6A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 1.6 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 1 A 6 A 39 W 0.31 W/℃ 64 mJ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 1.6 A EAR Repetitive Avalanche Energy 0.5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Value Units Rthj-c Symbol Thermal Resistance Junction-case Max. 3.2 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Parameter Data & specifications subject to change without notice 200705051-1/4 AP02N60H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 600 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1A - 0.2 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=±30V - - ±100 nA ID=1.6A - 14 20 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=250uA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC 3 td(on) Turn-on Delay Time VDD=300V - 9.5 - ns tr Rise Time ID=1.6A - 12 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns tf Fall Time RD=150Ω - 9 - ns Ciss Input Capacitance VGS=0V - 155 240 pF Coss Output Capacitance VDS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Min. Typ. IS=1.6A, VGS=0V - - 1.5 V Source-Drain Diode Symbol Parameter 3 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=1.6A, VGS=0V, - 360 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1970 - nC Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP02N60H/J 0.9 1.5 10V 6.0V 5.5V T C =150 C 1 5.0V 0.5 10V 6.0V 5.5V o ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 0.6 5.0V 0.3 V G = 4.5 V V G = 4.5 V 0 0 0 5 10 15 20 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 15 20 Fig 2. Typical Output Characteristics 1.2 3 I D =1A V G =10V Normalized RDS(ON) 1.1 Normalized BVDSS (V) 5 V DS , Drain-to-Source Voltage (V) 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C ) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 100 5 4 T j = 150 o C VGS(th) (V) IS (A) 10 o T j = 25 C 3 1 2 0.1 1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP02N60H/J f=1.0MHz 16 1000 12 V DS =320V V DS =400V V DS =480V 8 C (pF) VGS , Gate to Source Voltage (V) I D =1.6A C iss 100 4 C oss C rss 0 10 0 4 8 12 16 20 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 10 1ms 10ms ID (A) 1 100ms 1s DC 0.1 T c =25 o C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4