APT8018L2VR
800V 43A
POWER MOS V® MOSFET
0.180Ω
L2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
TO-264
Max
• Avalanche Energy Rated
D
• Faster Switching
• Lower Leakage
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8018L2VR
UNIT
800
Volts
Drain-Source Voltage
43
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
1
172
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
43
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 21.5A)
TYP
MAX
Volts
0.180
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
Ohms
µA
±100
nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
3-2006
Characteristic / Test Conditions
050-5992 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8018L2VR
MIN
Test Conditions
Characteristic
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
1180
Crss
Reverse Transfer Capacitance
f = 1 MHz
610
VGS = 10V
610
VDD = 400V
60
ID = 43A @ 25°C
360
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
VGS = 15V
19
Rise Time
VDD = 400V
17
ID = 43A @ 25°C
80
RG = 0.6Ω
12
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
10700
Qgd
tr
MAX
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
43
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -43A, dl S /dt = 100A/µs)
930
ns
Q rr
Reverse Recovery Charge (IS = -43A, dl S /dt = 100A/µs)
29
µC
dv/
Peak Diode Recovery
dt
dv/
172
(Body Diode)
1.3
(VGS = 0V, IS = -43A)
dt
5
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.15
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 43A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤800V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.12
0.7
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5992 Rev B
3-2006
0.16
0.08
0.3
Duty Factor D = t1/t2
0.1
0
10-5
t1
t2
0.04
SINGLE PULSE
0.05
10-4
°C/W
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8018L2VR
RC MODEL
Junction
temp. (°C)
0.0545
0.0487F
Power
(watts)
0.0957
0.922F
ID, DRAIN CURRENT (AMPERES)
120
VGS =15 &10V
100
6V
5.5V
80
60
5V
40
4.5V
20
Case temperature. (°C)
0
120
1.40
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
TJ = -55°C
40
TJ = +25°C
20
TJ = +125°C
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
I
D
1.10
1.05
1.00
0.95
0.90
-50
= 21.5A
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.5
1.0
0.5
0.0
-50
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
NORMALIZED TO
= 10V @ 21.5A
GS
1.30
1.15
50
ID, DRAIN CURRENT (AMPERES)
V
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
3-2006
0
0
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5992 Rev B
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
4V
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
D
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
= 43A
12
VDS=160V
8
VDS=400V
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Crss
100
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
VDS=640V
4
0
APT8018L2VR
30,000
172
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 MAXTM(L2) Package Outline (L2VR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
050-5992 Rev B
3-2006
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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