1/4 ◇ STRUCTURE Silicon Monolithic Integrated Circuit ◇ PRODUCT SPI BUS 16Kbit (2,048×8bit) EEPROM ◇ PART NUMBER BR35H160-WC series PART NUMBER BR35H160F-WC BR35H160FJ-WC BR35H160FVT-WC BR35H160FVM-WC ◇ FEATURES PACKAGE SOP8 SOP-J8 TSSOP-B8 MSOP8 Serial Peripheral Interface Single power supply (2.5V~5.5V) 1,000,000 erase/write cycles endurance (85℃) 500,000 erase/write cycles endurance (105℃) 300,000 erase/write cycles endurance (125℃) ◇ ABSOLUTE MAXIMUM RATING (Ta=25℃) Parameter Symbol Supply Voltage Vcc Rating Unit V -0.3~6.5 560 (BR35H160F-WC) *1 560 (BR35H160FJ-WC) *2 Pd mW Power Dissipation 410 (BR35H160FVT-WC) *3 380 (BR35H160FVM-WC) *4 Tstg -65~150 ℃ Storage Temperature Topr -40~125 ℃ Operating Temperature Terminal Voltage - -0.3~Vcc+0.3 V * Degradation is done at 4.5mW/℃(※1,2), 3.3mW/℃(※3), 3.1mW/℃(※4) for operation above 25℃ ◇ RECOMMENDED OPERATING CONDITION Parameter Symbol Rating Supply Voltage Vcc 2.5~5.5 Input Voltage VIN 0~Vcc Unit V V REV. B 2/4 ◇MEMORY CELL CHARACTERISTICS(Vcc=2.5~5.5V) Specification Parameter Write/Erase Cycle Data Retention Min. Test Condition Unit Typ. Max. 1,000,000 - - Cycle Ta≦85℃ 500,000 - - Cycle Ta≦105℃ 300,000 - - Cycle Ta≦125℃ 40 - - Year Ta≦25℃ 20 - - Year Ta≦125℃ *1 *1 ○Initial Data:Memory array FFh *1 Not 100% TESTED ◇DC OPERATING CHARACTERISTICS ◇AC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40~125℃, CL=100pF) (Unless otherwise specified Ta=-40~125℃, Vcc=2.5~5.5V) Parameter Symbol Specification Min. Typ. Max. Unit test condition Parameter Symbol 2.5V≦VCC≦5.5V Min. Typ. Max. Unit “H” Input Voltage VIH1 0.7xVcc - Vcc+0.3 V 2.5V≦Vcc≦5.5V SCK clock Frequency fSCK - - 5 “L” Input Voltage VIL1 -0.3 - 0.3xVcc V 2.5V≦Vcc≦5.5V SCK High Time tSCKWH 85 - - ns “L” Output Voltage VOL 0 - 0.4 V IOL=2.1mA (Vcc=2.5V~5.5V) SCK Low Time tSCKWL 85 - - ns “H” Output Voltage V IOH=-0.4mA (Vcc=2.5V~5.5V) CS High Time ns MHz VOH Vcc-0.5 - Vcc tCS 85 - - Input Leakage Current ILI -10 - 10 μA VIN=0V~Vcc CS Setup Time tCSS 90 - - ns Output Leakage Current ILO -10 - 10 μA VOUT=0V~Vcc , CSB=Vcc CS Hold Time tCSH 85 - - ns ICC1 - - 2 mA ICC2 - - 3 mA ICC3 - - 1.5 mA Operating Current Write Operating Current Read ICC4 Standby Current ISB - - - - 2 10 mA Vcc=2.5V , fSCK=5MHz , tE/W=5ms SCK Setup Time tSCKS 90 - - ns Byte Write,Page Write SCK Hold Time tSCKH 90 - - ns Vcc=5.5V , fSCK=5MHz , tE/W=5ms SI Setup Time tDIS 20 - - ns Byte Write,Page Write SI Hold Time tDIH 30 - - ns Vcc=2.5V , fSCK=5MHz Output Data Delay Time1 tPD1 - - 70 ns Read,Read Status Register Output Data Delay Time2 (CL=30pF) tPD2 - - 55 ns Vcc=5.5V , fSCK=5MHz Output Hold Time tOH 0 - - ns Read,Read Status Register Output Disable Time Vcc=5.5V SCK Rise Time *1 SCK Fall Time *1 Output Rise Time *1 Output Fall Time *1 tFO μA CSB=Vcc SCK=SI=Vcc or GND, SO=OPEN ○This product is not designed for protection against ○radioactive rays. tOZ - - 100 ns tRC - - 1 μs tFC - - 1 μs tRO - - 50 ns - - 50 ns - - 5 ms tE/W Write Cycle Time ※1 Not 100% TESTED ◇ BLOCK DIAGRAM CSB ◇PIN No. / PIN NAME 1 8 VCC VOLTAGE INSTRUCTION DECODE DETECTION CONTROL CLOCK GENERATION SO 2 WRITE HIGH VOLTAGE INHIBITION GENERATOR 7 NC INSTRUCTION REGISTER NC 3 STATUS REGISTER ADDRESS REGISTER 11bit ADDRESS 6 SCK 11bit DECODER 16,384bit EEPROM READ/WRITE DATA GND 4 REGISTER 8bit 8bit AMP 5 SI Fig.1 BLOCK DIAGRAM REV. B PIN No. 1 2 3 4 5 6 7 8 PIN NAME CSB SO NC GND SI SCK NC VCC 3/4 ◇NOTES FOR POWER SUPPLY In order to prevent an inadvertent write, the device has the feature of P.O.R. After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force the device write enable mode with CS=“H”during power ON/OFF. In the case of power up, keep the following conditions to ensure to make the function of P.O.R. tR ◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot Vcc tR tOFF Vbot Below 10ms Above 10ms Below 0.3V tOFF Vbot Below 100ms Above 10ms Below 0.2V 0 Fig.2 Vcc waveform Please keep CS “H” during power ON/OFF. The device is an active state during CS is low. The extraordinary function or data collaption may occur because of noise etc., if power-up is done with CS “L”. In order to prevent above errors from happening, keep CS “H” (=Vcc) during power ON. (The device does not receive any command during CS is high.) It may continue at low Vcc by capacitance of Vcc line during power off. Please keep CS “H” during power off because of the device may make malfunction and inadvertent write. Vcc (Good example) CS follows Vcc. (CS is pull up to Vcc) Vcc GND Vcc CS GND Good Bad Fig.3 CS TIMING DURING POWER ON/OFF (Bad example) CS is low during power ON/OFF. Please take more than 10ms between power ON and power OFF, or the internal circuit is not always reset. ◇CAUTIONS ON USE (1) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (2) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that of GND terminal. (3) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (4) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (5) Strong electromagnetic field Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently. REV. B 4/4 ◇PHYSICAL DIMENSION Product Name:BR35H160F-WC 5.0±0.2 8 7 6 Product Name:BR35H160FJ-WC +6゜ MAX5.35 (include.BURR) 4゜ -4゜ 5 16H 0.3MIN 0.9±0.15 6.2±0.3 4.4±0.2 16H 1 2 3 4 LOT NO. LOT NO. +0.1 0.17 -0.05 1.27 0.42±0.1 Drawing No. : EX111-5002 (UNIT:mm) Drawing No. : EX112-5002 (UNIT:mm) Fig.4-(a) PHYSICAL DIMENSION SOP-8 (BR35H160F-WC) Fig.4-(b) PHYSICAL DIMENSION SOP-J8 (BR35H160FJ-WC) Product Name: BR35H160FVT-WC 3.0±0.1 Product Name:BR35H160FVM-WC 2.9±0.1 +6゜ 4゜ -4゜ MAX3.25 (include.BURR) 6 L6 6 2 3 5 5 H 1 2 3 1PIN MARK 4 LOT NO. 1 +0.05 0.525 0.145 -0.03 1.2MAX 0.1±0.05 1.0±0.05 0.75±0.05 0.08±0.05 0.475 0.5±0.15 0.29±0.15 0.6±0.2 4.0±0.2 2.8±0.1 1 7 16H 7 8 6.4±0.2 4.4±0.1 8 4°±4° MAX3.35 (include.BURR) +0.05 0.22 -0.04 Drawing No. :181-5002 (UNIT:mm) Fig.4-(c) PHYSICAL DIMENSION MSOP8(BR35H160FVM-WC) 4 LOT NO. 0.145 +0.05 -0.03 1PIN MARK 0.65 1.0±0.2 0.11 1.5±0.1 0.595 0.08 S 0.245 +0.05 0.08 M -0.04 Drawing No. :165-5002 (UNIT:mm) Fig.4-(d) PHYSICAL DIMENSION TSSOP-B8(BR35H160FVT-WC) REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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