Renesas CT30SM-12 General inverter â ¢ ups use Datasheet

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April 1st, 2010
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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
CT30SM-12
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
¡VCES ................................................................................ 600V
¡IC ......................................................................................... 30A
¡High Speed Switching
¡Low VCE Saturation Voltage
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
q
e
TO-3P
APPLICATION
AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS
Symbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
—
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Conditions
600
±20
Unit
V
V
VCE = 0V
±30
30
60
250
–40 ~ +150
V
A
A
W
°C
–40 ~ +150
4.8
°C
g
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
Ratings
VGE = 0V
VCE = 0V
Typical value
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
Parameter
V (BR) CES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE = 600V, VGE = 0V
IC = 3.0mA, VCE = 10V
IC = 30A, VGE = 15V
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Rth (j-c)
Limits
Test conditions
Unit
Min.
600
—
—
Typ.
—
—
—
Max.
—
±0.5
1
VCE = 25V, VGE = 0V, f = 1MHz
4.5
—
—
—
6.0
2.5
1480
180
7.5
3.0
—
—
V
V
pF
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VCC = 300V, Resistance load,
IC = 30A, VGE = 15V, RGE = 20Ω
—
—
—
—
54
30
135
135
—
—
—
—
pF
ns
ns
ns
Thermal resistance
Junction to case
—
—
250
—
—
0.50
ns
°C/W
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
V
µA
mA
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
15V
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
VGE = 20V
50
Tj = 25°C
12V
11V
40
30
10V
20
9V
10
0
8V
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
Tj = 25°C
8
6
4
IC = 60A
30A
2
10A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
5
VGE = 15V
Tj = 25°C
4
3
2
1
0
0
10
20
30
40
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
50
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VCE = 10V
Tj = 25°C
40
30
20
10
0
50
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
104
7
5
3
2
Cies
103
7
5
3
2
102
7
5
3 Tj = 25°C
2 VGE = 0V
101
Coes
16
300V
12
8
4
80
GATE CHARGE Qg (nc)
tf
2
td(off)
102
7
5
tr
3
td(on)
100
2 3
5 7 101
2 3
5 7 102
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
GATE-EMITTER VOLTAGE VGE (V)
VCC = 200V
60
20
Tj = 25°C
VCC = 300V
VGE = 15V
RG = 20Ω
3
101 0
10
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
40
16
2
Cres
f = 1MHZ
20
12
103
7
5
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
0
8
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
0
4
GATE-EMITTER VOLTAGE VGE (V)
SWITCHING TIME (ns)
CAPACITANCE Cies, Coes, Cres (pF)
COLLECTOR CURRENT IC (A)
0
7
5
3
2
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
7
5
3
2
3
2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 710–3
PULSE WIDTH tw (s)
Feb.1999
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