Central CP127-2N6301 Npn - darlington transistor die Datasheet

CP127-2N6301
NPN - Darlington Transistor Die
8.0 Amp, 80 Volt
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The CP127-2N6301 is a silicon NPN Darlington power transistor designed for high gain amplifier
applications.
MECHANICAL SPECIFICATIONS:
Die Size
110 x 110 MILS
Die Thickness
10.6 MILS
Base Bonding Pad Size
21 x 24 MILS
Emitter Bonding Pad Size
24 x 42 MILS
Top Side Metalization
Al – 20,000Å
Back Side Metalization
Ni/Ag – 2,000Å/10,000Å
Scribe Alley Width
4.3 MILS
Wafer Diameter
4 INCHES
Gross Die Per Wafer
700
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
80
V
VEBO
IC
5.0
V
8.0
A
TJ, Tstg
-65 to +200
°C
MAX
0.5
UNITS
mA
5.0
mA
0.5
mA
2.0
mA
ELECTRICAL
SYMBOL
ICEV
ICEV
CHARACTERISTICS: (TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCE=80V, VBE=1.5V
VCE=80V, VBE=1.5V, TC=150°C
ICEO
VCE=40V
IEBO
VEB=5.0V
BVCEO
VCE(SAT)
IC=100mA
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hfe
fT
Cob
UNITS
V
80
80
V
IC=4.0A, IB=16mA
IC=8.0A, IB=80mA
2.0
V
3.0
V
IC=8.0A, IB=80mA
VCE=3.0V, IC=4.0A
4.0
V
2.8
V
VCE=3.0V, IC=4.0A
VCE=3.0V, IC=8.0A
750
VCE=3.0V, IC=3.0A, f=1.0kHz
VCE=3.0V, IC=3.0A, f=1.0MHz
VCB=10V, IE=0, f=100kHz
300
18K
100
4.0
MHz
200
pF
R1 (3-February 2016)
CP127-2N6301
Typical Electrical Characteristics
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R1 (3-February 2016)
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