Seme LAB BDS20 Silicon pnp epitaxial base in to220 metal and smd1 ceramic surface mount package Datasheet

BDS20 BDS20SMD
BDS21 BDS21SMD
MECHANICAL DATA
Dimensions in mm
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
4.6
1 0.6
3.6
Dia.
1 0 .6
1 3 .5
16.5
0.8
1 23
1 3 .7 0
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
1.0
2 .5 4
BSC
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
7 (0
8 (0
8 (0
8 (0
• FULLY ISOLATED (METAL VERSION)
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
2
9 .6
9 .3
1 1 .5
1 1 .2
TO220M
SMD1
• SCREENING TO CECC LEVELS
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
• MILITARY AND SPACE OPTIONS
2. 70
BSC
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
- TO220 Metal Package - Isolated
- Ceramic Surface Mount Package
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC(PK)
IB
Ptot
Tstg
Tj
Semelab plc.
Collector - Base voltage (IE = 0)
Collector - Emitter voltage (IB = 0)
Emitter - Base voltage (IC = 0)
Peak collector current
Base current
Total power dissipation at Tcase £ 75°C
Storage Temperature
Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
BDS20
NPN
80V
80V
5V
5A
0.1A
BDS21
PNP
–80V
–80V
–5V
–5A
–0.1A
50W
–65 to 200°C
200°C
Prelim. 7/00
BDS20 BDS20SMD
BDS21 BDS21SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VBE(on)*
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector - Emitter
sustaining voltage (IB = 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
hFE*
DC Current gain
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
Test Conditions
Max.
Unit
VCB = 80V
0.2
mA
VCE = 40V
0.5
mA
VEB = 5V
2
mA
IC = 30mA
IC = 3A
IC = 5A
IC = 3A
IC = 0.5A
IC = 3A
Min.
Typ.
120
IB = 12mA
IB = 20mA
VCE = 3V
VCE = 3V
VCE = 3V
V
2
4
2.5
V
V
1000
1000
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
THERMAL DATA
RTHj-case
Thermal resistance junction - case
Max. 2.5°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 62.5°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
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