UMS CHA3063 5.5-23ghz driver amplifier Datasheet

CHA3063
RoHS COMPLIANT
5.5-23GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3063 is a two-stage general
purpose
monolithic
medium
power
amplifier.The backside of the chip is both RF
and DC grounded.This helps to simplify the
assembly process.
The circuit is manufactured with a pHemt
process: 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Feature
24
dBS21
20
Broadband performance: 5.5-23GHz
21dBm output power (Psat)
19dB gain, ± 1dB gain flatness
Typical PAE:11% @ P-1dB comp.
Chip size: 1.33 x 0.910x 0.1mm
16
Gain Rlosses & NF ( dB )
12
8
NF
4
0
-4
-8
dBS11
-12
dBS22
-16
-20
-24
2
4
6
8
10
12
14
16
18
20
22
24
Frequency ( GHz )
Typical On wafer measurements
Main Characteristics
Tamb = +25°C
Symbol
Fop
G
Pout
Parameter
Operating frequency range
Small signal gain
Output power, Pin=0dBm
Min
Typ
5.5
Max
Unit
23
GHz
18
19
dB
+18
+20
dBm
Id_small_signal Bias current
160
210
mA
ESD Protection : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA3063-8144 - 23 May 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.5-23GHz Driver Amplifier
CHA3063
Electrical Characteristics on wafer
Tamb = +25°C, Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V)
Symbol
Parameter
Fop
G
∆G
Min
Operating frequency range
5.5
Small signal gain (5.5-6GHz)
17
Small signal gain (6-23GHz)
18
Typ
Unit
23
GHz
dB
Small signal gain flatness
Is
Max
19
dB
±1.0
dB
35
dB
Reverse isolation
P1dB
CW output power at 1dB compression (1)
+16
+18
dBm
Pout
Output Power (Pin=0dBm)
+18
+20
dBm
OIP3
Output 3rd order intercept point (2)
28
dBm
RL_IN
Input Return Loss (3)
-15
-7
dB
Output Return Loss (3)
-15
-7
dB
Noise figure
4.5
6
dB
Id_small signal Bias current
160
210
mA
RL_OUT
NF
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement
(3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
5.0
V
Ids
Drain bias current_small signal
210
mA
Vg
Gate bias voltage
-2 to +0.4
V
Ig
Gate bias current
0.7
mA
Vgd
Maximum negative gate drain Voltage (Vg-Vd)
-5
V
Pin
Maximum continuous input power
Maximum peak input power overdrive (2)
+1
+15
dBm
dBm
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref : DSCHA3063-8144 - 23 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.5-23GHz Driver Amplifier
CHA3063
Typical Scattering Parameters (On wafer Sij measurements)
Bias Conditions: Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C.
FREQ
GHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
S11
dB
-0.3
-0.7
-3.4
-5.7
-7.9
-9.0
-11.3
-13.5
-14.3
-14.0
-13.2
-13.2
-15.3
-16.7
-21.2
-18.6
-19.8
-18.8
-20.8
-19.8
-15.4
-14.2
-11.5
-11.6
-3.9
-2.0
-1.3
-1.3
-1.3
-1.2
S11
/°
-35.6
-75.6
-113.7
-140.7
-170.3
162.5
121.8
82.5
39.7
0.9
-34.0
-62.6
-95.8
-125.2
-125.5
-140.0
-124.7
-172.0
101.6
23.1
-14.7
-34.2
-43.5
-30.9
-46.7
-74.8
-99.2
-115.8
-128.4
-140.1
Ref : DSCHA3063-8144 - 23 May 08
S12
dB
-60.9
-63.1
-54.5
-53.1
-43.5
-44.2
-41.0
-38.7
-37.6
-37.1
-36.7
-35.6
-36.0
-35.0
-34.7
-36.4
-36.4
-38.5
-37.4
-35.2
-34.0
-33.8
-35.3
-33.1
-34.9
-35.3
-39.7
-33.9
-32.3
-28.7
S12
/°
84.0
142.8
-53.2
138.2
67.4
34.7
13.6
-16.7
-39.6
-61.4
-82.9
-107.7
-126.6
-148.4
-175.9
170.4
137.3
135.9
154.6
125.8
101.5
71.7
46.5
-0.4
-86.0
-172.0
157.6
138.6
128.4
96.4
S21
dB
-12.7
-13.7
11.6
15.2
16.4
18.8
19.3
18.9
19.1
19.3
19.5
19.6
19.5
19.2
18.5
18.2
18.1
18.1
18.0
18.0
18.2
18.9
19.5
20.4
17.6
10.9
3.9
-3.5
-12.1
-21.0
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
S21
/°
86.9
-179.2
123.1
58.5
19.0
-12.3
-46.9
-75.2
-100.4
-125.2
-150.7
-175.1
159.3
133.1
111.1
89.1
70.4
44.3
22.0
-2.5
-26.4
-57.7
-89.3
-144.0
153.9
104.5
69.9
44.6
29.3
47.7
S22
dB
-0.6
-1.4
-4.7
-6.2
-7.4
-11.1
-12.0
-11.6
-12.9
-14.4
-13.7
-13.5
-11.9
-11.9
-13.1
-14.7
-19.5
-17.4
-18.5
-19.4
-23.3
-21.4
-16.9
-6.3
-3.1
-3.2
-4.3
-4.7
-5.0
-5.9
S22
/°
-35.0
-67.7
-93.2
-111.6
-133.3
-149.1
-155.1
-173.2
171.7
165.8
164.9
148.9
131.3
116.0
95.0
79.9
72.4
72.2
57.4
47.4
32.5
76.8
77.6
46.6
-13.3
-59.0
-90.9
-113.7
-133.9
-153.6
Specifications subject to change without notice
5.5-23GHz Driver Amplifier
CHA3063
Typical ON JIG Measurements (deembedded)
Bias Conditions: Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C
GAIN & ReturnLosses MEASUREMENTS IN TEST JIG
25
S21
19
Gain/ReturnLosses (dB)
13
7
1
-5
S22
-11
-17
S11
-23
-29
-35
1
3
5
7
9
11
13
15
17
19
21
23
25
27
Frequency (GHz)
POWER MEASUREMENTS IN TEST JIG (deembedded)
30
25
Linear Gain
20
Psat (Glin-3dB)
20
15
P-1dB
15
10
PAE @ 1 db compression
10
5
5
0
0
-5
4
6
8
Ref : DSCHA3063-8144 - 23 May 08
10
12
14
16
Frequency (GHz)
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18
20
22
24
Specifications subject to change without notice
Gain (dB)
Output Power (dBm) / PAE (%)
25
5.5-23GHz Driver Amplifier
CHA3063
Typical ON JIG Power Measurements (deembedded)
Bias Conditions: Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C
Frequency : 6 GHz
25
500
20
400
350
Gain
15
300
250
10
Id (mA)
Pout (dBm) / Gain (dB) / PAE (%)
450
200
Pout
150
Id
5
100
PAE
50
0
0
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
Input Power (dBm)
Frequency : 20GHz
25
500
20
400
350
Gain
15
300
250
10
200
Pout
150
Id
5
100
50
PAE
0
0
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
Input Power (dBm)
Ref : DSCHA3063-8144 - 23 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
Id (mA)
Pout (dBm) / Gain (dB) / PAE (%)
450
5.5-23GHz Driver Amplifier
CHA3063
Vd=4V Id=160mA @ 23GHz ∆ f=10MHz
35
OIP3 # 28.5dBm
30
75
25
20
65
Fundamental
10
55
3rd order
5
IM3
0
45
-5
-10
35
-15
H3
-20
H1
-25
F2 + ( F2-F1 ) Df=10MHz
-30
F2 Df=10MHz
-35
IM3
IM3 (dBm)
Output power (dBm)
15
25
15
-40
5
-16
-14
-12
-10
-8
-6
-4
-2
0
2
Input power (dBm)
4
6
8
10
12
14
Typical ON JIG Noise Figure Measurements
Noise Figure versus Temperature
6,5
6
Noise Figure (dB)
5,5
5
4,5
85°C
25°C
-40°C
4
3,5
3
2,5
2
5
7
9
11
13
15
17
19
21
23
Frequency (GHz)
Ref : DSCHA3063-8144 - 23 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.5-23GHz Driver Amplifier
CHA3063
Chip Assembly and Mechanical Data
To Vd1,2 drain supply feed
To Vg gate supply feed
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Chip Mechanical Data and Pin references
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref : DSCHA3063-8144 - 23 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.5-23GHz Driver Amplifier
CHA3063
Ordering Information
Chip form
:
CHA3063-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref : DSCHA3063-8144 - 23 May 08
8/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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