AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 10A RDS(ON) < 23mΩ RDS(ON) < 35mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C TA=70°C TA=25°C Avalanche Current B, G B, G Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C ±20 V ID 7 IDM 64 W 2 IAR 12 A EAR 7 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 3.1 PD TA=70°C Repetitive avalanche energy 0.1mH Units V 10 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 34 62 18 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4466 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 VGS=10V, ID=10A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30 VGS=0V IGSS RDS(ON) Typ µA 100 nA 2.1 2.6 V 16.7 23 24.3 30 23.7 35 mΩ 1 V 2.4 A A 17 0.75 mΩ S 298 373 448 pF 46 67 88 pF 24 41 58 pF 0.6 1.8 2.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.7 7.1 8.6 nC Qg(4.5V) Total Gate Charge 2.7 3.5 4.2 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 1.2 nC 1.6 nC 4.3 ns 2.8 ns 15.8 ns 3 ns IF=10A, dI/dt=100A/µs 8.4 10.5 12.6 3.6 4.5 5.4 trr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs IF=10A, dI/dt=500A/µs Body Diode Reverse Recovery Time 4.7 6.0 7.2 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 5.3 6.6 8 Qrr Body Diode Reverse Recovery Time ns nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V Rev 9: May. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V 6V 50 VDS=5V 12 9 4.5V ID(A) ID (A) 40 30 6 20 125°C VGS=3.5V 3 10 0 25°C 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 40 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 2 VGS=4.5V 30 25 20 VGS=10V 15 10 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=10A 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ Ω) 50 125°C 1.0E-02 125°C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=10A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 300 200 Coss 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10µs 10.0 10.0 100µs RDS(ON) limited 1ms 10ms 100ms 1s 10s 1.0 TJ(Max)=150°C TA=25°C 0.1 1.0 1 10 100 Time in Avalache, tA (ms) Figure 9: Single Pulse Avalanche Capability 30 100.0 In descending order TA=25°C, 100°C, 125°C, ID (Amps) IA, Peak Avalanche Current (A) Ciss 400 1000 0.1 DC 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note E) 50 Power (W) 40 TJ(Max)=150°C TA=25°C 30 20 10 0 0.0001 0.01 1 100 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4466 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com