AOSMD AO4466 30v n-channel mosfet Datasheet

AO4466
30V N-Channel MOSFET
General Description
Product Summary
The AO4466 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
VDS (V) = 30V
ID = 10A
RDS(ON) < 23mΩ
RDS(ON) < 35mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current AF
VGS
TA=25°C
TA=70°C
TA=25°C
Avalanche Current B, G
B, G
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
±20
V
ID
7
IDM
64
W
2
IAR
12
A
EAR
7
mJ
-55 to 150
°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
3.1
PD
TA=70°C
Repetitive avalanche energy 0.1mH
Units
V
10
Pulsed Drain Current B
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
34
62
18
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4466
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
64
VGS=10V, ID=10A
TJ=125°C
VGS=4.5V, ID=5A
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30 VGS=0V
IGSS
RDS(ON)
Typ
µA
100
nA
2.1
2.6
V
16.7
23
24.3
30
23.7
35
mΩ
1
V
2.4
A
A
17
0.75
mΩ
S
298
373
448
pF
46
67
88
pF
24
41
58
pF
0.6
1.8
2.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
7.1
8.6
nC
Qg(4.5V) Total Gate Charge
2.7
3.5
4.2
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
1.2
nC
1.6
nC
4.3
ns
2.8
ns
15.8
ns
3
ns
IF=10A, dI/dt=100A/µs
8.4
10.5
12.6
3.6
4.5
5.4
trr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
4.7
6.0
7.2
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
5.3
6.6
8
Qrr
Body Diode Reverse Recovery Time
ns
nC
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 9: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
6V
50
VDS=5V
12
9
4.5V
ID(A)
ID (A)
40
30
6
20
125°C
VGS=3.5V
3
10
0
25°C
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
40
Normalized On-Resistance
1.8
35
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
30
25
20
VGS=10V
15
10
VGS=10V
1.6
VGS=4.5V
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=10A
1.0E+00
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
50
125°C
1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=15V
ID=10A
500
Capacitance (pF)
VGS (Volts)
8
6
4
2
300
200
Coss
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
10.0
10.0
100µs
RDS(ON)
limited
1ms
10ms
100ms
1s
10s
1.0
TJ(Max)=150°C
TA=25°C
0.1
1.0
1
10
100
Time in Avalache, tA (ms)
Figure 9: Single Pulse Avalanche Capability
30
100.0
In descending order
TA=25°C, 100°C, 125°C,
ID (Amps)
IA, Peak Avalanche Current (A)
Ciss
400
1000
0.1
DC
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note E)
50
Power (W)
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.0001
0.01
1
100
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4466
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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