DCR1008SF DCR1008SF Phase Control Thyristor Advance Information Replaces January 2000 version, DS4244-3.0 DS4244-4.0 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 3600V ■ High Surge Capability IT(AV) 1051A ITSM 15000A dVdt* 1000V/µs dI/dt 200A/µs APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies *Higher dV/dt selections available ■ DC Motor Control ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number DCR1008SF36 DCR1008SF35 DCR1008SF34 DCR1008SF33 DCR1008SF32 Repetitive Peak Voltages VDRM VRRM V Conditions 3600 3500 3400 3300 3200 Tvj = 0˚ to 125˚C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1008SF35 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR1008SF CURRENT RATINGS Tcase = 60˚C unless state dotherwise. Symbol Parameter Conditions Max. Units 1051 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1650 A Continuous (direct) on-state current - 1508 A 753 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 1182 A Continuous (direct) on-state current - 1018 A Conditions Max. Units 830 A IT Half wave resistive load CURRENT RATINGS Tcase = 60˚C unless state dotherwise. Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1300 A Continuous (direct) on-state current - 1160 A 565 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 890 A Continuous (direct) on-state current - 770 A IT Half wave resistive load 2/8 www.dynexsemi.com DCR1008SF SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 12.0 kA VR = 50% VRRM - 1/4 sine 0.72 x 106 A2s 10ms half sine; Tcase = 125oC 15.0 kA VR = 0 1.125 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.022 o Anode dc - 0.038 o Cathode dc - 0.052 o C/W Double side - 0.004 o C/W Single side - 0.008 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 18.0 22.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound C Virtual junction temperature C C kN 3/8 www.dynexsemi.com DCR1008SF DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 150 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/µs 75 A/µs Rate of rise of on-state current From 67% VDRM, IT = 1500A, Repetitive 50Hz Gate source1.5A tr ≤ 0.5µs. Tj = 125oC. Non-repetitive - dI/dt - 200 A/µs Threshold voltage At Tvj = 125oC - 1.1 V rT On-state slope resistance At Tvj = 125oC - 0.57 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω Rise time 0.5µs, Tj = 25oC - 2.0 µs IL Latching current Tj = 25oC, VD = 5V 350 900 mA IH Holding current Tj = 25oC, Rg-k = ∞ 230 600 mA tq Turn-off time - 500 µs Max. Units IRRM/IDRM VT(TO) IT = 3000A, tp = 1ms, Tj = 125˚C, VRM = 900V, dIRR/dt = 5A/µs, VDR = 2800V, dVDR/dt = 20V/µs linear GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 200 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table. fig. 4 150 W PG(AV) Mean gate power 10 W 4/8 www.dynexsemi.com DCR1008SF CURVES 3500 4000 Measured under pulse conditions 6 phase 3000 3 phase Half wave 2000 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) d.c. 3000 Tj = 125˚C 2500 2000 1500 1000 1000 500 0 1.0 2.0 3.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 4.0 00 400 800 1200 Mean on-state current, IT(AV) - (A) 1600 Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 1.458475 B = –0.098355 C = 0.000484 D = 0.012565 these values are valid for Tj = 125˚C for IT 500A to 4000A 5/8 www.dynexsemi.com DCR1008SF IT 100 Total stored charge, QS - (µC) Reverse recovery current, IRR - (A) Max. QS Min. QS Max. IRR Min. IRR 100 1000 10 pe Up r lim it 9 5% Tj = 125˚C 1000 10000 Gate trigger voltage, VGT - (V) IRM 1 VGD Conditions: Tj = 125˚C, IT = 3000A 100 0.1 1.0 Lo 10 100 10 0.1 0.001 % 0.1 1 10 40 Anode side cooled Double side cooled 0.01 Peak half sine wave on-state current - (kA) I2t = Î2 x t 2 30 700 20 650 600 10 I2t 550 500 0.001 0.001 0.01 0.1 Time - (s) 1.0 10 0 1 10 ms 1 2 3 45 10 I2t value - (A2s x 103) Thermal Impedance - Junction to case - (˚C/W) d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Anode side 0.038 0.040 0.042 0.043 it 5 Fig.5 Gate characteristics Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 lim Region of certain triggering Gate trigger current, IGT - (A) Fig.4 Stored charge Conduction r we 0.01 Rate of decay of on-state current, dI/dt - (A/µs) 0.1 0W 10 W 50 tp = 1.6ms dI/dt 400 150 125 100 25 - 100 150 150 150 50 - W 20 W 10 5W 50 150 150 150 150 20 100 200 500 1ms 10ms QS Table gives pulse power PGM in Watts Frequency Hz Pulse width µs Tj = 25˚C Tj = -40˚C 10000 100000 450 20 30 50 Cycles at 50Hz Duration Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 6/8 www.dynexsemi.com DCR1008SF PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode tab Cathode Ø76 max Ø48 nom 27.0 25.4 Ø1.5 Gate Ø48 nom Anode Nominal weight: 450g Clamping force: 19.5kN ± 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F 7/8 www.dynexsemi.com DCR1008SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4244-4 Issue No. 4.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com