WILLAS FM120-M+ BC868 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE SOT-89 Package outline TRANSISTOR (NPN) Features • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. SOD-123H High• Low current profile surface mounted application in order to optimize board space. Low• voltage Low power loss, high efficiency. z z 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. • High surge capability. unless otherwise noted) MAXIMUM RATINGS (Ta=25℃ protection. for overvoltage • Guardring • Ultra high-speed switching. planar chip, metal silicon junction. Unit Symbol• Silicon epitaxial Parameter Value Lead-free parts meet environmental standards of • 32 V V 0.012(0.3) Typ. 1. BASE 2. COLLECTOR 0.071(1.8) 0.056(1.4) 3. EMITTER Collector-Base Voltage CBO MIL-STD-19500 /228 VCEO product for packing code suffix "G" • RoHS Collector-Emitter Voltage VEBO Emitter-Base Voltage Mechanical data IC PC Collector Current -Continuous 1 : UL94-V0 rated flame retardant • Epoxy Collector Power Dissipation 500 : Molded plastic, SOD-123H • Case TJ • Terminals terminals, solderable per Junction:Plated Temperature 150MIL-STD-750 ℃ V 5 V Pb-Free package is available 0.040(1.0) 0.024(0.6) RoHS product for packing code suffix ”G” A ina ry Tstg 20 Halogen free product for packing code suffix "H" Method 2026 Storage Temperature -55~150 mW , Typ. 0.031(0.8) Typ. Halogen0.031(0.8) free product for packing code suffix “H” ℃ Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Position : Any • Mounting ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) • Weight : Approximated 0.011 gram Symbol Test conditions Min im Parameter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃breakdown ambient temperature specified. IC=100μA,IE=0 V(BR)CBO Collector-base voltageunless otherwise RATINGS Max V(BR)EBO VRRM Maximum Recurrent Peak Reverse Voltage 32 V 20 V IE=100μA,IC=0 12 20 13 30 14 40 15 50 16 60 14 5 18 80 10 100 Collector cut-off current ICBO VCB=25V,IE=0 21 28 35 42 56 70 Maximum DC Blocking Voltage Emitter cut-off current VDC IEBO 30 VEB20 =5V,IC=0 40 50 60 80 100 0.1 VRMS Maximum RMS Voltage IO Maximum Average Forward Rectified Current VCE=1V,IC=500mA hFE(2) VCE=1V,IC=1A CJ hFE(3) VCE=10V,IC=5mA 40 120 50 TSTG VCE(sat) IC=1A,IB=100mA - 65 to +175 superimposed on rated load (JEDEC method) DC current gain IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range Collector-emitter saturation voltage CHARACTERISTICS 0.1 115 150 V 120 200 V 105 140 V 150μA 200 V μA 1.0 hFE(1) Peak Forward Surge Current 8.3 ms single half sine-wave A 85 375 30 A 60 -55 to +125 ℃ -55 to +150 0.5 V FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH VSYMBOL VCE=10V,I 0.62 V FM1200-MH BE1 C=5mA VF Maximum Forward Voltage at 1.0A DC Base-emitter voltage Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Emitter-base breakdown voltage Marking Code IC=1mA,IB=0 Pr el Single phase half wave, 60Hz, resistive of inductive load. V(BR)CEO For capacitive load, derate current by 20% Collector-emitter breakdown voltage Typ @T A=125℃ VBE2IR Transition frequency fT NOTES: 0.50 0.70 0.9 0.85 0.5 VCE=1V,IC=1A 1 0.92 V 10 VCE=5V,IC=10mA,f=100MHz 40 U V m MHz 1- Measured at 1 MHZ and OF applied CLASSIFICATION hreverse FE(1) voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Rank Range Marking 2012-06 2012-0 BC868-10 BC868-16 BC868-25 85-160 100-250 160-375 CBC CCC CDC WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC868 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) Mechanical data 0.040(1.0) 0.024(0.6) ina ry retardant • Epoxy : UL94-V0 rated flame.173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code .154(3.91) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM 12 20 VDC 20 .023(0.58) 14 VRMS .016(0.40) .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) Typical Thermal Resistance (Note 2) 16 60 18 80 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 40 120 TSTG 115 150 30 RΘJA TJ 10 100 21 30 Operating Temperature Range -55 to +125 -55 to +150 - 65 to +175 .197(0.52) .013(0.32) .017(0.44) .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at .118TYP (3.0)TYP @T A=25℃ Rated DC Blocking Voltage @T A=125℃ Maximum Forward Voltage at 1.0A DC 50 IFSM CJ CHARACTERISTICS 40 1.0 Typical Junction Capacitance (Note 1) .060TYP (1.50)TYP 13 30 IO Maximum Average Forward Rectified Current Storage Temperature Range .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el .167(4.25) VF 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.