ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD1107/ALD1117 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other precision analog circuits. • • • • • • • • FEATURES • • • • • • • • • Low threshold voltage of -0.7 Low input capacitance Low VOS 2mV typical High input impedance -- 1014Ω typical Low input and output leakage currents Negative current (IDS) temperature coefficient Enhancement-mode (normally off) DC current gain 10 9 Low input and output leakage currents PIN CONFIGURATION 1 ALD1117 DP1 1 8 DP2 GP1 2 7 GP2 SP1 3 6 SP2 V- 4 5 V+ DA, PA, SA PACKAGE 1 ALD1107 ORDERING INFORMATION -55°C to +125°C Precision current sources Precision current mirrors Voltage Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Precision analog signal processing Operating Temperature Range* 0°C to +70°C 0°C to +70°C DP1 1 14 DP2 GP1 2 13 GP2 SP1 3 12 SP2 V- 4 11 V+ 8-Pin CERDIP Package 8-Pin Plastic Dip Package 8-Pin SOIC Package DP4 5 10 DP3 ALD1117 DA ALD1117PA ALD1117 SA GP4 6 9 GP3 14-Pin CERDIP Package 14-Pin Plastic Dip Package 14-Pin SOIC Package SP4 7 8 SP3 ALD1107 DB ALD1107 PB ALD1107 SB DB, PB, SB PACKAGE * Contact factory for industrial temperature range. BLOCK DIAGRAM BLOCK DIAGRAM ALD1107 ALD1117 V- (4) DP2 (14) DP1 (1) GP2 (13) GP1 (2) SP1 (3) V+ (11) SP2 (12) ~ V - (4) DP4 (5) DP3 (10) GP3 (9) DP1 (1) GP4 (6) SP3 (8) V+ (11) SP4 (7) ~ DP2 (8) GP1 (2) GP2 (7) SP1 (3) V+ (5) SP2 (6) © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range -13.2V -13.2V 500 mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C PA, SA, PB, SB package DA, DB package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1107 Parameter Symbol Gate Threshold Voltage VT Offset Voltage VGS1-VGS2 VOS Gate Threshold Temperature Drift 2 Typ Max -0.4 -0.7 -1.0 2 10 Transconductance Min -0.4 -1.3 TCVT On Drain Current ALD1117 Min Typ Test Max -0.7 -1.0 2 10 -1.3 IDS (ON) -1.3 -2 -1.3 -2 GIS 0.25 0.67 0.25 0.67 Unit V mV Conditions I DS = -1.0µA VGS = VDS IDS = -10µA VGS = VDS mV/°C mA VGS = VDS = -5V mmho VDS = -5V IDS = -10mA Mismatch ∆Gfs 0.5 0.5 % Output Conductance GOS 40 40 µmho VDS = -5V IDS = -10mA Ω VDS = -0.1V VGS = -5V % VDS = -0.1V VGS = -5V V IDS = -1.0µA VGS = 0V Drain Source On Resistance 1200 R DS (ON) Drain Source On Resistance Mismatch ∆RDS (ON) Drain Source Breakdown Voltage BVDSS 1800 1200 0.5 1800 0.5 -12 -12 Off Drain Current 1 IDS (OFF) 10 400 4 10 400 4 pA nA VDS = -12V VGS = 0V TA = 125°C Gate Leakage Current IGSS 0.1 10 1 0.1 10 1 pA nA VDS = 0V VGS = -12V TA = 125°C Input Capacitance 2 CISS 1 3 1 3 pF Notes: 1 2 Consists of junction leakage currents Sample tested parameters ALD1107/ALD1117 Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS VGS = -12V VBS = 0V TA = 25°C -7.5 DRAIN SOURCE CURRENT (µA) DRAIN SOURCE CURRENT (mA) 500 -10 -10V -8V -5.0 -6V -2.5 -4V -2V 0 250 -4V -2V 0 -250 -2 -4 -6 -8 -10 -12 -320 -160 DRAIN SOURCE VOLTAGE (V) 320 160 0 DRAIN SOURCE VOLTAGE (mV) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE -20 1.0 IDS = -5mA VBS = 0V f = 1KHz 0.5 DRAIN SOURCE CURRENT (µA) FORWARD TRANSCONDUCTANCE (mmho) -6V -500 0 0.2 0.1 TA = +125°C TA = +25°C 0.05 IDS = -1mA 0.02 VBS = 0V 4V 6V 8V 10V 12V 2V -15 -10 -5 VGS = VDS TA = 25°C 0 0.01 0 -2 -4 -6 -8 -10 0 -12 -0.8 DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE -2.4 -3.2 -4.0 OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA) 100 VDS = 0.4V VBS = 0V 10 -1.6 GATE SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE (KΩ) VGS = -12V VBS = 0V TA = 25°C TA = +125°C 1 TA = +25°C 1000 VDS = -12V VGS = VBS = 0V 100 10 1 0.1 0 -2 -4 -6 -8 -10 -12 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE (°C) GATE SOURCE VOLTAGE (V) ALD1107/ALD1117 -50 Advanced Linear Devices 3 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL V+ = +5V V+ = +5V 1/2 ALD1107 or ALD1117 1/2 ALD1107 or ALD1117 V+ = +5V Q4 Q3 ISET Q3 Q4 RSET ISET I SOURCE Q1 ON Q2 I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET 1/2 ALD1106 or ALD1116 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET 1/4 ALD1106 or 1/2 ALD1116 Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET CURRENT SOURCE MULTIPLICATION 1/2 ALD1107 or ALD1117 V+ = +5V PMOS PAIR Q3 Q1 OFF DIFFERENTIAL AMPLIFIER V+ ISOURCE RSET Digital Logic Control of Current Source ISET RSET ISOURCE = ISET x N Q4 VOUT Q1 VIN+ Q2 NMOS PAIR 1/2 ALD1106 or ALD1116 Q2 Q3 QN Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET ALD1107/ALD1117 Q1 QSET VIN- QSET, Q1..QN: ALD1106 or ALD1116 N - Channel MOSFET Advanced Linear Devices 4 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE P- CHANNEL CURRENT SOURCE V+ = +5V V+ = +5V 1/2 ALD1107 or ALD1117 RSET ISET ISOURCE 8 Q2 8 5 6 Q1 2 7 3 2 Q4 5 1 I SOURCE ISET 1/2 ALD1106 or ALD1116 ISOURCE = ISET = 7 6 Q3 3 V+ - Vt RSET V+ - 1.0 ~ ~ = = RSET RSET 4 RSET Q3, Q4: P - Channel MOSFET Q1, Q2 : N - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ALD1107 ISET RSET ISOURCE Q4 Q1 Q2 Q3 Q4 Q3 Q2 Q1 ISET ISOURCE RSET ALD1106 ISOURCE = ISET = ~ = 3 RSET Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) ALD1107/ALD1117 V+ - 2Vt RSET Advanced Linear Devices 5