Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT Isolated AlSiC Base With AlN Substrates APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1200ASM45-TS001 is a single switch 4500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 4500V 2.7V 1200A 2400A * Measured at the auxiliary terminals 3(C) 9(C) 7(C) 5(C) 8(E) 6(E) 4(E) 2(G) 1(E) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM1200ASM45-TS001 Outline type code: A Note: When ordering, please use the complete part number (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM1200ASM45-TS001 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 4500 V ±20 V Continuous collector current Tcase = 90°C 1200 A IC(PK) Peak collector current 1ms, Tcase = 120°C 2400 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 125°C 12.5 kW Diode I t value VR = 0, tp = 10ms, Tj = 125ºC 460 kA s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 10.2 kV QPD Partial discharge – per module IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS 10 pC 2 It 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Rth(j-c) Thermal resistance – transistor Rth(j-c) Thermal resistance – diode Rth(c-h) Thermal resistance – case to heatsink (per module) Tj Tstg Typ. Max Units - - 8 °C/kW - - 16 °C/kW - - 6 °C/kW Transistor - - 125 °C Diode - - 125 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Junction temperature Storage temperature range Screw torque 2/8 Min - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ASM45-TS001 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Max Units VGE = 0V, VCE = VCES 4 mA VGE = 0V, VCE = VCES, Tcase = 125°C 90 mA Gate leakage current VGE = ± 20V, VCE = 0V 1 μA Gate threshold voltage IC = 120mA, VGE = VCE 5.8 V Collector-emitter saturation voltage VGE = 15V, IC = 1200A 2.7 V VGE = 15V, IC = 1200A, Tj = 125°C 3.5 V IF Diode forward current DC 1200 A IFM Diode maximum forward current tp = 1ms 2400 A IF = 1200A 2.8 V IF = 1200A, Tj = 125°C 3.2 V ICES VGE(TH) VF Test Conditions Min Typ Collector cut-off current IGES VCE(sat) Parameter † † Diode forward voltage Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 150 nF Qg Gate charge ±15V 17 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 12 nF LM Module inductance 10 nH Internal transistor resistance 90 μ 4800 A RINT Tj = 125°C, VCC = 3400V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM1200ASM45-TS001 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol td(off) tf Parameter Min Turn-off delay time IC = 1200A Fall time VGE = ±15V EOFF Turn-off energy loss td(on) Turn-on delay time tr Test Conditions VCE = 2800V RG(ON) = 2.4 RG(OFF) = 2.7 Cge = 220nF LS ~ 165nH Rise time Typ. Max Units 3000 ns 600 ns 4500 mJ 900 ns 350 ns 4800 mJ 1340 μC EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current VCE = 2800V 1030 A Erec Diode reverse recovery energy dIF/dt = 3000A/μs 2220 mJ IF = 1200A Tcase = 125°C unless stated otherwise Parameter Symbol td(off) tf Turn-off delay time IC = 1200A Fall time EOFF Turn-off energy loss td(on) Turn-on delay time tr Test Conditions VGE = ±15V VCE = 2800V RG(ON) = 2.4 RG(OFF) = 2.7 Cge = 220nF LS ~ 165nH Rise time Min Typ. Max Units 3100 ns 560 ns 4650 mJ 900 ns 360 ns 6450 mJ 2200 μC EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current VCE = 2800V 1100 A Erec Diode reverse recovery energy dIF/dt = 3000A/μs 3750 mJ 4/8 IF = 1200A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ASM45-TS001 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM1200ASM45-TS001 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ASM45-TS001 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 190 ±0.5 171 ±0.15 57 ±0.1 6 x M8 screwing depth max. 16 3 x M4 14 ±0.2 18 ±0.2 41 ±0.2 44 ±0.4 140 ±0.5 124 ±0.1 18 ±0.1 7 8 xØ 7 59.2 ±0.2 38 ±0.5 screwing depth max. 8 61.2±0.3 61.2±0.3 5 ±0.2 48 ±0.5 12 ±0.2 external connection external connection 5(C) 7(C) 9(C) 3(C) Nominal Weight: 7(C) 1700g 9(C) 2(G)Type Code: Module Outline 2(G) 5(A) 3(C) A Fig. 11 Module outline drawing 1(E) 1(E) 4(E) 6(E) external connection DIM...ASM....... 8(E) 6(E) 8(E) DIM...ACM....... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4(C) external connection 7 /8 DIM1200ASM45-TS001 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 2012 Technical Documentation – Not for resale. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com