DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG540W N9 • High transition frequency BFG540W/X N7 • Gold metallization ensures excellent reliability. BFG540W/XR N8 CODE fpage 4 3 1 2 PINNING APPLICATIONS Top view RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. PIN MBK523 DESCRIPTION BFG540W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter Fig.1 SOT343N. BFG540W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter 3 alfpage 4 2 BFG540W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 1 Top view MSB842 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS open emitter MIN. TYP. MAX. UNIT − − 20 V − − 15 V VCBO collector-base voltage VCES collector-emitter voltage RBE = 0 IC collector current (DC) − − 120 mA Ptot total power dissipation Ts ≤ 85 °C − − 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 16 − dB 10 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C pF |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 14 15 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz − 2.1 − dB 2000 May 23 2 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 120 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Ts ≤ 85 °C; see Fig.3; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s Ts ≤ 85 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG248 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 200 T s (o C) VCE ≤ 10 V. Fig.3 Power derating curve. 2000 May 23 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA ; IE = 0 20 − − V V(BR)CES collector-emitter breakdown voltage RBE = 0; IC = 40 µA 15 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 100 µA; IC = 0 2.5 − − V ICBO collector cut-off current open emitter; VCB = 8 V; IE = 0 − − 50 nA hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; IC = 40 mA; VCE = 8 V; f = 900 MHz; − note 1 Tamb = 25 °C 16 − dB − 10 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C GHz |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 Tamb = 25 °C 15 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz − 2.1 − dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; f = 900 MHz; − RL = 50 Ω; Tamb = 25 °C 21 − dBm ITO third order intercept point note 2 − 34 − dBm Vo output voltage note 3 − 500 − mV d2 second order intermodulation distortion note 4 − −50 − dB Notes s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C; a) fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA; a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C; a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. 2000 May 23 4 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MRA749 250 hFE Cre (pF) 200 0.8 150 0.6 100 0.4 50 0.2 0 10−2 MRA750 1 handbook, halfpage handbook, halfpage 10−1 1 10 IC (mA) 0 102 0 4 VCE = 8 V. IC = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. MLC044 12 handbook, halfpage fT (GHz) VCE = 8 V 8 VCE = 4 V 4 0 10 1 1 10 I C (mA) 10 2 f = 1 GHz; Tamb = 25 °C. Fig.6 Transition frequency as a function of collector current; typical values. 2000 May 23 5 8 VCB (V) 12 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MLC045 30 MLC046 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 20 20 MSG G max G UM 10 G max G UM 10 0 0 0 10 20 50 40 I C (mA) 30 0 10 f = 900 MHz; VCE = 8 V. f = 2 GHz; VCE = 8 V. Fig.7 Fig.8 Gain as a function of collector current; typical values. MLC047 50 50 40 I C (mA) 30 Gain as a function of collector current; typical values. MLC048 50 handbook, halfpage handbook, halfpage gain (dB) 20 gain (dB) G UM 40 40 G UM MSG MSG 30 30 20 20 10 10 G max 0 G max 0 10 102 103 f (MHz) 104 10 102 103 f (MHz) 104 IC = 10 mA; VCE = 8 V. IC = 40 mA; VCE = 8 V. Fig.9 Fig.10 Gain as a function of frequency; typical values. Gain as a function of frequency; typical values. 2000 May 23 6 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MEA973 −20 dim MEA972 −20 d2 handbook, halfpage handbook, halfpage (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 20 30 40 50 −70 10 60 IC (mA) 30 40 50 60 IC (mA) Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω. Vo = 500 mV; f(p + q − r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω. Fig.12 Second order intermodulation distortion as a function of collector current; typical values. Fig.11 Intermodulation distortion as a function of collector current; typical values. MLC049 4 20 MRA760 5 handbook, halfpage handbook, halfpage Fmin (dB) 4 F (dB) f = 900 MHz 1000 MHz 3 f = 2000 MHz Gass 3 2000 MHz 20 Gass (dB) 15 10 2 2000 MHz 1000 MHz 900 MHz 500 MHz 1 5 2 1000 MHz 900 MHz 500 MHz 1 0 1 10 I C (mA) Fmin 0 0 102 1 10 IC (mA) −5 102 VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure as a function of collector current; typical values. Fig.14 Associated available gain as a function of collector current; typical values. 2000 May 23 7 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MLC050 4 MRA761 5 handbook, halfpage handbook, halfpage Fmin F (dB) IC = 10 mA (dB) 4 I C = 40 mA 40 mA 20 Gass (dB) 15 Gass 3 10 mA 3 10 2 5 2 40 mA 1 1 0 10 2 10 3 f (MHz) 0 102 10 4 VCE = 8 V. Fmin 0 103 f (MHz) −5 104 VCE = 8 V. Fig.15 Minimum noise figure as a function of frequency; typical values. 2000 May 23 10 mA Fig.16 Associated available gain as a function of frequency; typical values. 8 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor handbook, full pagewidth 90 o stability circle 1.0 1 135 o 45 o 2 0.5 0.8 0.6 unstable region 0.2 0.4 5 F min = 1.3 dB Γ opt 180 o 0.2 0 0.5 1 0.2 2 5 0o 0 F = 1.5 dB F = 2 dB 0.2 5 F = 3 dB 0.5 2 135 o 45 o 1 MLC051 1.0 90 o f = 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.17 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 Γ opt 1 2 5 0o F min = 2.1 dB 0 G max = 9.8 dB G = 9 dB G = 8 dB 0.2 5 F = 1.5 dB F = 3 dB F = 4 dB 0.5 2 135 o 45 o 1 MLC052 90 o f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.18 Common emitter noise figure circles; typical values. 2000 May 23 9 1.0 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 3 GHz 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 0.2 5 40 MHz 0.5 2 135 o 0o 0 5 45 o 1 MLC053 1.0 90 o VCE = 8 V; IC = 40 mA; Zo = 50 Ω. Fig.19 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MLC054 VCE = 8 V; IC = 40 mA. Fig.20 Common emitter forward transmission coefficient (s21); typical values. 2000 May 23 10 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor 90 o handbook, full pagewidth 3 GHz 135 180 o 0.25 o 45 o 40 MHz 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLC055 VCE = 8 V; IC = 40 mA. Fig.21 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 3 GHz 40 MHz 0.2 0.5 2 135 o 5 45 o 1 MLC056 1.0 90 o VCE = 8 V; IC = 40 mA; Zo = 50 Ω. Fig.22 Common emitter output reflection coefficient (s22); typical values. 2000 May 23 11 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor SPICE parameters for the BFG540W crystal SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE UNIT VJS 750.0 mV MJS 0.000 − FC 0.814 − 1 IS 1.045 fA 36 (1) 2 BF 184.3 − 37 (1) 3 NF 0.981 − 38 4 VAF 41.69 V Note 5 IKF 10.00 A 6 ISE 232.4 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.028 − 8 BR 43.99 − 9 NR 0.992 − 10 VAR 2.097 V 11 IKR 166.2 mA C cb handbook, halfpage L1 B LB L2 B' C' C 12 ISC 129.8 aA 13 NC 1.064 − 14 RB 5.000 Ω 15 IRB 1.000 µA 16 RBM 5.000 Ω 17 RE 353.5 mΩ RC 1.340 Ω XTB 0.000 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 1.978 pF 23 VJE 600.0 mV 24 MJE 0.332 − 25 TF 7.457 ps 26 XTF 11.40 − 27 VTF 3.158 V 28 ITF 156.9 mA Cbe 70 fF 29 PTF 0.000 deg Ccb 50 fF 115 fF 18 19 (1) C be E' Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.23 Package equivalent circuit SOT343N; SOT343R. List of components (see Fig.23). DESIGNATION VALUE UNIT 30 CJC 793.7 fF Cce 31 VJC 185.5 mV L1 0.34 nH 32 MJC 0.084 − L2 0.10 nH XCJC 0.150 − L3 0.25 nH TR 1.598 ns LB 0.40 nH CJS 0.000 F LE 0.40 nH 33 34 35 (1) 2000 May 23 12 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343N 2000 May 23 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 2000 May 23 EUROPEAN PROJECTION 14 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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