AP9972GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 18mΩ ID G 60A S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9972GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Drain Current, VGS @ 10V 60 A ID@TC=100℃ Drain Current, VGS @ 10V 38 A 230 A 89 W 0.7 W/℃ 45 mJ 30 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 3 EAS Single Pulse Avalanche Energy 3 IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 Units 1.4 ℃/W 40 ℃/W 62 ℃/W 1 201501157 AP9972GS/P-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ VGS=4.5V, ID=25A - - 22 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=35A - 55 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125 C) VDS=48V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA Qg Total Gate Charge ID=35A - 32 51 nC Qgs Gate-Source Charge VDS=48V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC td(on) Turn-on Delay Time VDS=30V - 11 - ns tr Rise Time ID=35A - 58 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 45 - ns tf Fall Time RD=0.86Ω - 80 - ns Ciss Input Capacitance VGS=0V - 3170 5070 pF Coss Output Capacitance VDS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Min. Typ. IS=35A, VGS=0V - - 1.2 V o Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=35A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=100uH , RG=25Ω , IAS=30A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9972GS/P-HF 200 150 10V 7.0V o 10V 7.0V T C = 150 o C 150 ID , Drain Current (A) ID , Drain Current (A) T C =25 C 5.0V 100 4.5V 5.0V 100 4.5V 50 50 V G =3.0V V G =3.0V 0 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 I D = 25 A T C =25 o C I D =35A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ ) 18 16 1.2 1.0 0.8 0.6 14 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.7 o o T j =150 C IS(A) Normalized VGS(th) 15 T j =25 C 10 1.2 0.7 5 0.2 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9972GS/P-HF f=1.0MHz 10 10000 8 C iss V DS = 30 V V DS = 38 V V DS = 48 V 6 C (pF) VGS , Gate to Source Voltage (V) I D = 35 A 1000 4 C oss C rss 2 100 0 0 20 40 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 ID (A) 100 100us 10 1ms 10ms 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 1 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V ID , Drain Current (A) 80 T j =25 o C QG T j =150 o C 4.5V 60 QGS QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP9972GS/P-HF MARKING INFORMATION TO-263 9972GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence TO-220 9972GP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5