MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES ............................................................................... 600V ¡IC ......................................................................................... 75A ¡High Speed Switching ¡Low VCE Saturation Voltage q e q GATE w COLLECTOR e EMITTER r COLLECTOR TO-3PL APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Conditions 600 ±20 Unit V V VCE = 0V ±30 75 150 300 –40 ~ +150 V A A W °C –40 ~ +150 9.8 °C g Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight Ratings VGE = 0V VCE = 0V Typical value Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage Collector-emitter leakage current IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V Gate-emitter leakage current Gate-emitter threshold voltage VCE = 600V, VGE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V Limits Test conditions Unit Min. 600 — — Typ. — — — Max. — ±0.5 1 VCE = 25V, VGE = 0V, f = 1MHz 4.5 — — — 6.0 2.5 3100 400 7.5 3.0 — — V V pF pF td (off) tf Turn-on delay time Rise time Turn-off delay time Fall time VCC = 300V, Resistance load, IC = 75A, VGE = 15V, RGE = 10Ω — — — — 130 40 265 175 — — — — pF ns ns ns Rth (j-c) Thermal resistance Junction to case — — 245 — — 0.42 ns °C/W IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance V µA mA PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V COLLECTOR CURRENT IC (A) 100 15V Tj = 25°C 12V 80 PC = 300W 60 11V 40 10V 20 9V 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 6 150A 4 75A 2 30A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE 5 VGE = 15V Tj = 25°C 4 3 2 1 0 0 20 40 60 80 COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 100 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCE = 10V Tj = 25°C 80 60 40 20 0 100 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 Cies 3 2 103 7 5 3 2 Coes 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 Cres tf tr 102 7 5 16 300V 12 8 4 160 GATE CHARGE Qg (nc) 200 td(off) td(on) 3 Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth ( j – c) GATE-EMITTER VOLTAGE VGE (V) VCE = 200V 120 20 2 101 0 10 GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 80 16 3 2 f = 1MHZ 40 12 103 7 5 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 0 8 SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) 0 4 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (pF) COLLECTOR CURRENT IC (A) 0 7 5 3 2 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 7 5 3 2 3 2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999