Rohm BU7444SF Ground sense low voltage operation cmos operational amplifier Datasheet

Datasheet
Operational Amplifiers
Ground Sense Low Voltage Operation
CMOS Operational Amplifiers
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
General Description
Key Specifications
BU7441G/BU7442xxx/BU7444F are input ground
sense, output full swing CMOS operational
amplifiers.
BU7441SG/BU7442Sxxx/BU7444SF
have an expanded operating temperature range.
They have the features of low operating supply
voltage, low supply current and low input bias
current. They are suitable for portable equipment
and sensor amplifiers.





Features




Low Supply Current
Low Operating Supply Voltage
Wide Temperature Range
Low Input Bias Current
Operating Supply Voltage:
Supply Current:
Temperature Range:
BU7441G/BU7442xxx/BU7444F
+1.7V to +5.5V
50µA/ch (Typ)
-40°C to +85°C
BU7441SG/BU7442Sxxx/BU7444SF
jj-40°C to +105°C
Input Offset Current:
1pA (Typ)
Input Bias Current:
1pA (Typ)
Packages
SSOP5
SOP8
MSOP8
VSON008X2030
SOP14
Applications



BU7444F BU7444SF
Sensor Amplifier
Portable Equipment
Consumer Equipment
W(Typ) x D(Typ) x H(Max)
2.90mm x 2.80mm x 1.15mm
5.00mm x 6.20mm x 1.61mm
2.90mm x 4.00mm x 0.83mm
2.00mm x 1.50mm x 0.60mm
8.70mm x 6.20mm x 1.61mm
Simplified Schematic
VDD
Vbias
IN+
Class
OUT
AB control
IN-
Vbias
VSS
Figure 1. Simplified Schematic (1 channel only)
○Product structure：Silicon monolithic integrated circuit
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TSZ02201-0RAR1G200160-1-2
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Pin Configuration
BU7441G, BU7441SG : SSOP5
Pin No.
Pin Name
1
IN+
+
2
VSS
-
3
IN-
4
OUT
5
VDD
Pin No.
Pin Name
1
OUT1
2
IN1-
3
IN1+
IN+ 1
VSS
2
IN-
3
5 VDD
4
OUT
BU7442F, BU7442SF
: SOP8
BU7442FVM, BU7442SFVM : MSOP8
BU7442NUX, BU7442SNUX : VSON008X2030
8 VDD
1
OUT1
CH1
- +
+
IN1- 2
7
CH2
+ -
IN1+ 3
VSS 4
4
VSS
5
IN2+
6
IN2-
7
OUT2
8
VDD
Pin No.
Pin Name
1
OUT1
14 OUT4
2
IN1-
13 IN4-
3
IN1+
4
VDD
5
IN2+
6
IN2-
7
OUT2
8
OUT3
9
IN3-
10
IN3+
OUT2
6
IN2-
5
IN2+
BU7444F, BU7444SF : SOP14
OUT1
1
IN1-
2
CH1
－
- ＋
+
CH4
＋
+ －
IN1+
3
12 IN4+
VDD
4
11 VSS
IN2+
5
10 IN3+
IN2-
6
OUT2
7
- ＋
+
－
CH2
＋
+ －CH3
9
IN3-
8
OUT3
11
VSS
12
IN4+
13
IN4-
14
OUT4
Package
SSOP5
SOP8
MSOP8
VSON008X2030
SOP14
BU7441G
BU7441SG
BU7442F
BU7442SF
BU7442FVM
BU7442SFVM
BU7442NUX
BU7442SNUX
BU7444F
BU7444SF
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TSZ02201-0RAR1G200160-1-2
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Ordering Information
B
U
7
4
4
x
Part Number
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F
BU7444SF
x
x
x
x
-
Package
G
:ISSOP5
F
: SOP8
F
: SOP14
FVM : MSOP8
NUX : VSON008X2030F
xx
Packaging and forming specification
E2: Embossed tape and reel
(SOP8/SOP14)
TR: Embossed tape and reel
(SSOP5/MSOP8/VSON008X2030)
Line-up
Topr
Channels
1ch
-40°C to +85°C
-40°C to +105°C
Orderable Part Number
SSOP5
Reel of 3000
BU7441G-TR
SOP8
Reel of 2500
BU7442F-E2
MSOP8
Reel of 3000
BU7442FVM-TR
VSON008X2030
Reel of 4000
BU7442NUX-TR
4ch
SOP14
Reel of 2500
BU7444F-E2
1ch
SSOP5
Reel of 3000
BU7441SG-TR
SOP8
Reel of 2500
BU7442SF-E2
MSOP8
Reel of 3000
BU7442SFVM-TR
VSON008X2030
Reel of 4000
BU7442SNUX-TR
SOP14
Reel of 2500
BU7444SF-E2
2ch
2ch
4ch
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Package
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TSZ02201-0RAR1G200160-1-2
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Absolute Maximum Ratings(TA=25°C)
Parameter
Rating
Symbol
Supply Voltage
BU7441G
BU7442xxx
VDD-VSS
+7
-
-
SOP8
-
0.55
(Note2,6)
PD
-
MSOP8
-
0.47
(Note3,6)
-
0.41
(Note4,6)
(Note 7)
0.54
VSON008X2030
-
SOP14
-
-
Unit
V
(Note1,6)
SSOP5
Power Dissipation
BU7444F
W
0.45
(Note5,6)
Differential Input Voltage
VID
VDD - VSS
V
Input Common-mode
Voltage Range
VICM
(VSS-0.3) to (VDD+0.3)
V
II
±10
mA
Operating Supply Voltage
Vopr
+1.7V to +5.5V
V
Operating Temperature
Topr
-40 to +85
°C
Tstg
-55 to +125
°C
TJmax
+125
°C
(Note 8)
Input Current
Storage Temperature
Maximum Junction Temperature
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
To use at temperature above TA=25C reduce 5.4mW/°C.
To use at temperature above TA=25C reduce 5.5mW/°C.
To use at temperature above TA=25C reduce 4.7mW/°C.
To use at temperature above TA=25C reduce 4.1mW/°C.
To use at temperature above TA=25C reduce 4.5mW/°C.
Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (Copper foil area less than 3%).
The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
(Note 8) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied.
The input current can be set to less than the rated current by adding a limiting resistor.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as
short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is
operated in a special mode exceeding the absolute maximum ratings.
Parameter
Rating
Symbol
Supply Voltage
BU7441SG
VDD-VSS
0.54
SOP8
Power Dissipation
PD
(Note 15)
Input Common-mode
Voltage Range
(Note 16)
Input Current
BU7444SF
+7
SSOP5
Differential Input Voltage
BU7442Sxxx
(Note9,14)
-
MSOP8
-
VSON008X2030
-
SOP14
-
V
-
-
0.55
(Note10,14)
-
0.47
(Note11,14)
-
0.41
(Note12,14)
-
Unit
W
0.45
(Note13,14)
VID
VDD - VSS
V
VICM
(VSS-0.3) to (VDD+0.3)
V
II
±10
mA
Operating Supply Voltage
Vopr
+1.7V to +5.5V
V
Operating Temperature
Topr
-40 to +105
°C
Tstg
-55 to +125
°C
TJmax
+125
°C
Storage Temperature
Maximum Junction Temperature
(Note 9)
(Note 10)
(Note 11)
(Note 12)
(Note 13)
(Note 14)
(Note 15)
To use at temperature above TA=25C reduce 5.4mW/°C.
To use at temperature above TA=25C reduce 5.5mW/°C.
To use at temperature above TA=25C reduce 4.7mW/°C.
To use at temperature above TA=25C reduce 4.1mW/°C.
To use at temperature above TA=25C reduce 4.5mW/°C.
Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (Copper foil area less than 3%).
The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
(Note 16) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied.
The input current can be set to less than the rated current by adding a limiting resistor.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as
short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is
operated in a special mode exceeding the absolute maximum ratings.
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TSZ02201-0RAR1G200160-1-2
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Electrical Characteristics
○BU7441G, BU7441SG（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Limit
Symbol
Temperature
Range
Min
Typ
Max
Unit
Conditions
Input Offset Voltage
(Note 17)
VIO
25°C
-
1
6
mV
-
Input Offset Current
(Note 17)
IIO
25°C
-
1
-
pA
-
IB
25°C
-
1
-
pA
-
25°C
-
50
120
Full range
-
-
240
Input Bias Current
Supply Current
(Note 17)
(Note 18)
IDD
μA
RL=∞
AV=0dB, IN+=0.9V
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
ISINK
25°C
5
10
-
mA
VSS+0.4V
SR
25°C
-
0.3
-
V/μs
CL=25pF
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
THD+N
25°C
-
0.05
-
%
Input Common-mode
Voltage Range
Output Source Current
Output Sink Current
(Note 19)
(Note 19)
Slew Rate
Gain Bandwidth
Phase Margin
Total Harmonic Distortion +
Noise
OUT=0.8VP-P
f=1kHz
(Note 17) Absolute value
(Note 18) Full range: BU7441G: TA=-40°C to +85°C, BU7441SG: TA=-40°C to +105°C
(Note 19) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Electrical Characteristics - continued
○BU7442xxx, BU7442Sxxx（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Limit
Symbol
Temperature
Range
Min
Typ
Max
Unit
Conditions
Input Offset Voltage
(Note 20)
VIO
25°C
-
1
6
mV
-
Input Offset Current
(Note 20)
IIO
25°C
-
1
-
pA
-
IB
25°C
-
1
-
pA
-
Input Bias Current
Supply Current
(Note 20)
(Note 21)
IDD
25°C
-
100
240
Full range
-
-
480
μA
RL=∞, All Op-Amps
AV=0dB, +IN=0.9V
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
ISINK
25°C
5
10
-
mA
VSS+0.4V
SR
25°C
-
0.3
-
V/μs
CL=25pF
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
THD+N
25°C
-
0.05
-
%
OUT=0.8VP-P
f=1kHz
CS
25°C
-
100
-
dB
AV=40dB, OUT=1Vrms
Input Common-mode
Voltage Range
Output Source Current
Output Sink Current
(Note 22)
(Note 22)
Slew Rate
Gain Bandwidth
Phase Margin
Total Harmonic Distortion +
Noise
Channel Separation
(Note 20) Absolute value
(Note 21) Full range: BU7442xxx: TA=-40°C to +85°C, BU7442Sxxx: TA=-40°C to +105°C
(Note 22) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Electrical Characteristics - continued
○BU7444F, BU7444SF（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Limit
Symbol
Temperature
Range
Min
Typ
Max
Unit
Conditions
Input Offset Voltage
(Note 23)
VIO
25°C
-
1
6
mV
-
Input Offset Current
(Note 23)
IIO
25°C
-
1
-
pA
-
IB
25°C
-
1
-
pA
-
25°C
-
200
480
Full range
-
-
960
Input Bias Current
Supply Current
(Note 23)
(Note 24)
IDD
μA
RL=∞, All Op-Amps
AV=0dB, +IN =0.9V
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
ISINK
25°C
5
10
-
mA
VSS+0.4V
SR
25°C
-
0.3
-
V/μs
CL=25pF
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
THD+N
25°C
-
0.05
-
%
OUT=0.8VP-P
f=1kHz
CS
25°C
-
100
-
dB
AV=40dB, OUT=1Vrms
Input Common-mode
Voltage Range
Output Source Current
Output Sink Current
(Note 25)
(Note 25)
Slew Rate
Gain Bandwidth
Phase Margin
Total Harmonic Distortion +
Noise
Channel Separation
(Note 23) Absolute value
(Note 24) Full range: BU7444F: TA=-40°C to +85°C, BU7444SF: TA=-40°C to +105°C
(Note 25) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Description of Electrical Characteristics
Described here are the terms of electric characteristics used in this technical note. Items and symbols used are also shown.
Note that item name and symbol and their meaning may differ from those on another manufacture’s document or general
document.
1. Absolute maximum ratings
Absolute maximum rating item indicates the condition which must not be exceeded. Application of voltage in excess of absolute
maximum rating or use out of absolute maximum rated temperature environment may cause deterioration of characteristics.
(1) Supply Voltage (VDD/VSS)
Indicates the maximum voltage that can be applied between the VDD terminal and VSS terminal without deterioration
or destruction of characteristics of internal circuit.
(2) Differential Input Voltage (VID)
Indicates the maximum voltage that can be applied between non-inverting terminal and inverting terminal without
deterioration and destruction of characteristics of IC.
(3) Input Common-mode Voltage Range (VICM)
Indicates the maximum voltage that can be applied to the non-inverting and inverting terminals without deterioration
or destruction of electrical characteristics. Input common-mode voltage range of the maximum ratings does not assure
normal operation of IC. For normal operation, use the IC within the input common-mode voltage range characteristics.
(4) Power Dissipation (PD)
Indicates the power that can be consumed by the IC when mounted on a specific board at the ambient temperature 25°C
(normal temperature). As for package product, PD is determined by the temperature that can be permitted by the IC in
the package (maximum junction temperature) and the thermal resistance of the package.
2. Electrical characteristics
(1) Input Offset Voltage (VIO)
Indicates the voltage difference between non-inverting terminal and inverting terminals. It can be translated into the
input voltage difference required for setting the output voltage at 0V.
(2) Input Offset Current (IIO)
Indicates the difference of input bias current between the non-inverting and inverting terminals.
(3) Input Bias Current (IB)
Indicates the current that flows into or out of the input terminal. It is defined by the average of input bias currents at
the non-inverting and inverting terminals.
(4) Supply Current (IDD)
Indicates the current that flows within the IC under specified no-load conditions.
(5) Maximum Output Voltage(High) / Maximum Output Voltage(Low) (VOH/VOL)
Indicates the voltage range of the output under specified load condition. It is typically divided into maximum output
voltage High and low. Maximum output voltage high indicates the upper limit of output voltage. Maximum output
voltage low indicates the lower limit.
(6) Large Signal Voltage Gain (AV)
Indicates the amplifying rate (gain) of output voltage against the voltage difference between non-inverting terminal
and inverting terminal. It is normally the amplifying rate (gain) with reference to DC voltage.
AV = (Output voltage) / (Differential Input voltage)
(7) Input Common-mode Voltage Range (VICM)
Indicates the input voltage range where IC operates normally.
(8) Common-mode Rejection Ratio (CMRR)
Indicates the ratio of fluctuation of input offset voltage when the input common mode voltage is changed. It is
normally the fluctuation of DC.
CMRR = (Change of Input common-mode voltage)/(Input offset fluctuation)
(9) Power Supply Rejection Ratio (PSRR)
Indicates the ratio of fluctuation of input offset voltage when supply voltage is changed.
It is normally the fluctuation of DC.
PSRR = (Change of power supply voltage)/(Input offset fluctuation)
(10) Output Source Current/ Output Sink Current (ISOURCE / ISINK)
The maximum current that can be output from the IC under specific output conditions. The output source current
indicates the current flowing out from the IC, and the output sink current indicates the current flowing into the IC.
(11) Slew Rate (SR)
Indicates the ratio of the change in output voltage with time when a step input signal is applied.
(12) Gain Bandwidth (GBW)
The product of the open-loop voltage gain and the frequency at which the voltage gain decreases 6dB/octave.
(13) Phase Margin (θ)
Indicates the margin of phase from 180 degree phase lag at unity gain frequency.
(14) Total Harmonic Distortion + Noise (THD+N)
Indicates the fluctuation of input offset voltage or that of output voltage with reference to the change of output voltage
of driven channel.
(15) Channel Separation (CS)
Indicates the fluctuation in the output voltage of the driven channel with reference to the change of output voltage of
the channel which is not driven.
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BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves
1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
○BU7441G, BU7441SG
0.6
BU7441G
0.4
0.6
BU7441SG
0.4
0.2
0.2
0.0
0
25
50
75
85
0.0
100
125
150
0
25
50
105
100
125
75
Ambient Temperature [°C]
Ambient Temperature [°C]
Figure 2.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 3.
Power Dissipation vs Ambient Temperature
Derating Curve
120
120
100
100
105°C
5.5V
Supply Current [µA]
85°C
Supply Current [µA]
150
80
60
25°C
40
80
3.0V
60
1.7V
40
-40°C
20
20
0
0
1
2
3
4
5
-50
6
-25
0
25
50
75
100
Supply Voltage [V]
Ambient Temperature [°C]
Figure 4.
Supply Current vs Supply Voltage
Figure 5.
Supply Current vs Ambient Temperature
125
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
9/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves – continued
○BU7441G, BU7441SG
8
Maximum Output Voltage (High) [V]
Maximum Output Voltage (High) [V]
6
5
105°C
4
85°C
25°C
3
-40°C
2
1
0
4
3.0V
1.7V
2
0
1
2
3
4
5
6
-50
Supply Voltage [V]
0
25
50
75
Ambient Temperature [°C]
Figure 6.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
Figure 7.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
-25
100
125
8
Maximum Output Voltage (Low) [mV]
12
Maximum Output Voltage (Low) [mV]
5.5V
6
9
105°C
6
85°C
3
-40°C
25°C
5.5V
6
4
1.7V
3.0V
2
0
0
1
2
3
4
Supply Voltage [V]
5
-50
6
Figure 8.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 9.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
10/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7441G, BU7441SG
40
20
Output Source Current [mA]
Output Source Current [mA]
-40°C
30
25°C
20
85°C
105°C
10
0
15
5.5V
10
3.0V
5
1.7V
0
0
0.5
1
1.5
2
Output Voltage [V]
2.5
3
-50
Figure 10.
Output Source Current vs Output Voltage
(VDD=3V)
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 11.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
80
60
50
60
Output Sink Current [mA]
-40°C
Output Sink Current [mA]
-25
25°C
40
105°C
85°C
20
40
30
3.0V
5.5V
20
1.7V
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
Output Voltage [V]
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 13.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 12.
Output Sink Current vs Output Voltage
(VDD=3V)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
11/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves – continued
○BU7441G, BU7441SG
4.0
4.0
3.0
3.0
25°C
2.0
Input Offset Voltage [mV]
Input Offset Voltage [mV]
-40°C
1.0
0.0
105°C
85°C
-1.0
-2.0
-3.0
2.0
5.5V
1.7V
0.0
-1.0
-2.0
-3.0
-4.0
-4.0
1
2
3
4
Supply Voltage [V]
5
6
-50
Figure 14.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 15.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
200
4
-40°C
180
25°C
85°C
2
1
0
105°C
-1
-2
-3
Large Signal Voltage Gain [dB]
3
Input Offset Voltage [mV]
3.0V
1.0
160
140
25°C
-40°C
120
100
105°C
80
85°C
60
40
20
-4
0
-1.0
-0.5
0.0
0.5 1.0 1.5
Input Voltage [V]
2.0
2.5
3.0
1
Figure 16.
Input Offset Voltage vs Input Voltage
(VDD=3V)
2
3
4
Supply Voltage [V]
5
6
Figure 17.
Large Signal Voltage Gain vs Supply Voltage
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
12/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7441G, BU7441SG
200
180
180
Common Mode Rejection Ratio [dB]
200
Large Signal Voltage Gain [dB]
160
3.0V
140
5.5V
120
100
1.7V
80
60
40
160
140
-40°C
120
80
85°C
40
20
0
0
-25
0
25
50
75
Ambient Temperature [°C]
100
125
1
200
180
180
Power Supply Rejection Ratio [dB]
Common Mode Rejection Ratio [dB]
200
160
140
5.5V
120
100
80
1.7V
60
40
6
120
100
80
60
40
0
0
0
25
50
75
100
Ambient Temperature [°C]
5
140
20
-25
3
4
Supply Voltage [V]
160
20
-50
2
Figure 19.
Common Mode Rejection Ratio vs Supply Voltage
Figure 18.
Large Signal Voltage Gain vs Ambient Temperature
3.0V
105°C
60
20
-50
25°C
100
-50
125
Figure 20.
Common Mode Rejection Ratio vs Ambient Temperature
-25
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 21.
Power Supply Rejection Ratio vs Ambient Temperature
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
13/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
1.0
1.0
0.8
0.8
Slew Rate H-L [V/µs]
Slew Rate L-H [V/µs]
○BU7441G, BU7441SG
0.6
5.5V
3.0V
0.4
0.6
5.5V
3.0V
0.4
0.2
0.2
1.7V
1.7V
0.0
0.0
-50
-25
0
25
50
75
100
-50
125
-25
Ambient Temperature [°C]
100
125
Figure 23.
Slew Rate H-L vs Ambient Temperature
Figure 22.
Slew Rate L-H vs Ambient Temperature
100
0
25
50
75
Ambient Temperature [°C]
200
Phase
80
60
100
40
Gain
50
20
0
Phase [deg]
Voltage Gain[dB]
150
0
1
1
2
3
4
5
6
7
8
1
10
10
10
10
10
10
10
10
1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
00
01
02
03
04 [Hz]
05
06
07
08
Frequency
Figure 24.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
14/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves
1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
○BU7442xxx, BU7442Sxxx
BU7442F
0.6
BU7442FVM
0.4
BU7442NUX
BU7442SF
0.6
BU7442SFVM
0.4
BU7442SNUX
0.2
0.2
0.0
0.0
85
0
25
50
75
100
125
105
0
150
25
50
75
100
150
Ambient Temperature [°C]
Ambient Temperature [°C]
Figure 25.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 26.
Power Dissipation vs Ambient Temperature
Derating Curve
200
200
180
180
160
160
140
Supply Current [µA]
105°C
Supply Current [µA]
125
85°C
120
100
80
25°C
60
100
80
40
20
0
0
2
1.7V
60
20
1
3.0V
120
-40°C
40
5.5V
140
3
4
5
6
-50
-25
0
25
50
75
100
Supply Voltage [V]
Ambient Temperature [°C]
Figure 27.
Supply Current vs Supply Voltage
Figure 28.
Supply Current vs Ambient Temperature
125
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
15/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
8
Maximum Output Voltage (High) [V]
Maximum Output Voltage (High) [V]
6
5
105°C
4
85°C
25°C
3
-40°C
2
1
5.5V
6
4
3.0V
1.7V
2
0
0
1
2
3
4
5
-50
6
-25
Supply Voltage [V]
Figure 29.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
100
125
Figure 30.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
12
8
Maximum Output Voltage (Low) [mV]
Maximum Output Voltage (Low) [mV]
0
25
50
75
Ambient Temperature [°C]
9
105°C
6
85°C
3
-40°C
25°C
0
5.5V
6
3.0V
4
1.7V
2
0
1
2
3
4
Supply Voltage [V]
5
-50
6
Figure 31.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 32.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
16/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
40
20
Output Source Current [mA]
Output Source Current [mA]
-40°C
30
25°C
20
85°C
105°C
10
0
15
5.5V
10
3.0V
1.7V
5
0
0
0.5
1
1.5
2
Output Voltage [V]
2.5
3
-50
Figure 33.
Output Source Current vs Output Voltage
(VDD=3V)
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 34.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
80
60
50
-40°C
60
Output Sink Current [mA]
Output Sink Current [mA]
-25
25°C
40
105°C
85°C
20
40
30
5.5V
20
1.7V
10
0
3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
Output Voltage [V]
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 36.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 35.
Output Sink Current vs Output Voltage
(VDD=3V)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
17/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
4.0
4.0
3.0
3.0
85°C
5.5V
2.0
Input Offset Voltage [mV]
Input Offset Voltage [mV]
105°C
1.0
25°C
-40°C
0.0
-1.0
-2.0
-3.0
2.0
1.0
3.0V
1.7V
0.0
-1.0
-2.0
-3.0
-4.0
-4.0
1
2
3
4
Supply Voltage [V]
5
6
-50
Figure 37.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 38.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
200
4
-40°C
180
3
Input Offset Voltage [mV]
Large Signal Voltage Gain [dB]
85°C
25°C
2
1
105°C
0
-1
-2
-3
160
-40°C
140
85°C
25°C
120
100
105°C
80
60
40
20
-4
0
-1.0
-0.5
0.0
0.5 1.0 1.5
Input Voltage [V]
2.0
2.5
3.0
1
Figure 39.
Input Offset Voltage vs Input Voltage
(VDD=3V)
2
3
4
Supply Voltage [V]
5
6
Figure 40.
Large Signal Voltage Gain vs Supply Voltage
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
18/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
200
180
180
Common Mode Rejection Ratio [dB]
200
Large Signal Voltage Gain [dB]
160
3.0V
5.5V
140
120
100
1.7V
80
60
40
160
140
120
0
100
125
1
200
200
180
180
160
140
5.5V
120
100
80
3.0V
1.7V
40
6
120
100
80
60
40
0
0
0
25
50
75
100
Ambient Temperature [°C]
5
140
20
-25
3
4
Supply Voltage [V]
160
20
-50
2
Figure 42.
Common Mode Rejection Ratio vs Supply Voltage
Power Supply Rejection Ratio [dB]
Common Mode Rejection Ratio [dB]
Figure 41.
Large Signal Voltage Gain vs Ambient Temperature
60
85°C
40
0
0
25
50
75
Ambient Temperature [°C]
105°C
60
20
-25
-40°C
80
20
-50
25°C
100
-50
125
Figure 43.
Common Mode Rejection Ratio vs Ambient Temperature
-25
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 44.
Power Supply Rejection Ratio vs Ambient Temperature
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
19/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves – continued
1.0
1.0
0.8
0.8
Slew Rate H-L [V/µs]
Slew Rate L-H [V/µs]
○BU7442xxx, BU7442Sxxx
0.6
5.5V
0.4
0.6
5.5V
0.4
3.0V
3.0V
0.2
0.2
1.7V
1.7V
0.0
0.0
-50
-25
0
25
50
75
100
-50
125
-25
Ambient Temperature [°C]
100
125
Figure 46.
Slew Rate H-L vs Ambient Temperature
Figure 45.
Slew Rate L-H vs Ambient Temperature
100
0
25
50
75
Ambient Temperature [°C]
200
Phase
80
60
100
40
Gain
50
20
0
Phase [deg]
Voltage Gain[dB]
150
0
1
1
2
3
4
5
6
7
8
1
10
10
10
10
10
10
10
10
1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
00
01
02
03
04 [Hz]
05
06
07
08
Frequency
Figure 47.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
20/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
Datasheet
BU7444F BU7444SF
Typical Performance Curves
1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
○BU7444F, BU7444SF
0.6
BU7444F
0.4
0.6
0.4
BU7444SF
0.2
0.2
0.0
0
25
50
75
85
0.0
100
125
105
0
150
25
75
100
125
150
Ambient Temperature [°C]
Ambient Temperature [°C]
Figure 49.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 48.
Power Dissipation vs Ambient Temperature
Derating Curve
400
400
350
350
300
Supply Current [µA]
300
Supply Current [µA]
50
105°C
250
200
25°C
85°C
150
5.5V
250
200
3.0V
150
1.7V
100
100
-40°C
50
50
0
0
1
2
3
4
5
-50
6
-25
0
25
50
75
100
Supply Voltage [V]
Ambient Temperature [°C]
Figure 50.
Supply Current vs Supply Voltage
Figure 51.
Supply Current vs Ambient Temperature
125
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
21/40
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F BU7444SF
Datasheet
Typical Performance Curves – continued
○BU7444F, BU7444SF
8
Maximum Output Voltage (High) [V]
Maximum Output Voltage (High) [V]
6
5
105°C
4
85°C
25°C
3
-40°C
2
1
5.5V
6
4
3.0V
1.7V
2
0
0
1
2
3
4
5
-50
6
-25
Supply Voltage [V]
Figure 52.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
100
125
Figure 53.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
12
8
Maximum Output Voltage (Low) [mV]
Maximum Output Voltage (Low) [mV]
0
25
50
75
Ambient Temperature [°C]
9
105°C
6
85°C
3
25°C
-40°C
5.5V
6
3.0V
4
1.7V
2
0
0
1
2
3
4
Supply Voltage [V]
5
-50
6
Figure 54.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 55.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
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Typical Performance Curves – continued
○BU7444F, BU7444SF
40
20
Output Source Current [mA]
Output Source Current [mA]
-40°C
30
25°C
20
85°C
105°C
10
0
15
5.5V
10
3.0V
5
1.7V
0
0
0.5
1
1.5
2
Output Voltage [V]
2.5
-50
3
Figure 56.
Output Source Current vs Output Voltage
(VDD=3 V)
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 57.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
80
60
50
60
Output Sink Current [mA]
-40°C
Output Sink Current [mA]
-25
25°C
40
105°C
85°C
20
40
30
3.0V
5.5V
20
1.7V
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
Output Voltage [V]
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 59.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 58.
Output Sink Current vs Output Voltage
(VDD=3V)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
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Typical Performance Curves – continued
4.0
4.0
3.0
3.0
2.0
2.0
1.0
105°C
Input Offset Voltage [mV]
Input Offset Voltage [mV]
○BU7444F, BU7444SF
85°C
0.0
-40°C
25°C
-1.0
-2.0
-3.0
1.0
5.5V
0.0
3.0V
-2.0
-3.0
-4.0
-4.0
1
2
3
4
Supply Voltage [V]
5
6
-50
Figure 60.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
-25
0
25
50
75
Ambient Temperature [°C]
100
125
Figure 61.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
200
4
180
85°C
-40°C
2
25°C
1
0
105°C
-1
-2
-3
Large Signal Voltage Gain [dB]
3
Input Offset Voltage [mV]
1.7V
-1.0
160
140
105°C
25°C
120
-40°C
85°C
100
80
60
40
20
-4
0
-1.0
-0.5
0.0
0.5 1.0 1.5
Input Voltage [V]
2.0
2.5
1
3.0
Figure 62.
Input Offset Voltage vs Input Voltage
(VDD=3V)
2
3
4
Supply Voltage [V]
5
6
Figure 63.
Large Signal Voltage Gain vs Supply Voltage
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
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Typical Performance Curves – continued
○BU7444F, BU7444SF
200
180
180
Common Mode Rejection Ratio [dB]
200
Large Signal Voltage Gain [dB]
160
140
3.0V
5.5V
120
100
1.7V
80
60
40
160
140
120
25°C
60
0
0
0
25
50
75
Ambient Temperature [°C]
100
125
1
200
200
180
180
160
140
120
3.0V
100
80
1.7V
60
40
6
120
100
80
60
40
0
0
0
25
50
75
100
Ambient Temperature [°C]
5
140
20
-25
3
4
Supply Voltage [V]
160
20
-50
2
Figure 65.
Common Mode Rejection Ratio vs Supply Voltage
Power Supply Rejection Ratio [dB]
Common Mode Rejection Ratio [dB]
Figure 64.
Large Signal Voltage Gain vs Ambient Temperature
5.5V
-40°C
40
20
-25
85°C
80
20
-50
105°C
100
-50
125
Figure 66.
Common Mode Rejection Ratio vs Ambient Temperature
-25
0
25
50
75
100
Ambient Temperature [°C]
125
Figure 67.
Power Supply Rejection Ratio vs Ambient Temperature
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
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Typical Performance Curves – continued
1.0
1.0
0.8
0.8
Slew Rate H-L [V/µs]
Slew Rate L-H [V/µs]
○BU7444F, BU7444SF
0.6
5.5V
3.0V
0.4
0.6
5.5V
3.0V
0.4
0.2
0.2
1.7V
1.7V
0.0
0.0
-50
-25
0
25
50
75
100
-50
125
-25
Ambient Temperature [°C]
100
125
Figure 69.
Slew Rate H-L vs Ambient Temperature
Figure 68.
Slew Rate L-H vs Ambient Temperature
100
0
25
50
75
Ambient Temperature [°C]
200
Phase
80
60
100
40
Gain
50
20
0
Phase [deg]
Voltage Gain[dB]
150
0
1
1
2
3
4
5
6
7
8
1
10
10
10
10
10
10
10
10
1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
00
01
02
03
04 [Hz]
05
06
07
08
Frequency
Figure 70.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
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Application Information
NULL method condition for Test Circuit 1
VDD, VSS, EK, VICM Unit:V
Parameter
Input Offset Voltage
VF
S1
S2
S3
VDD
VSS
EK
VICM
Calculation
VF1
ON
ON
OFF
3
0
-1.5
1.8
1
ON
ON
ON
3
0
0.9
2
ON
ON
OFF
3
0
-1.5
ON
ON
OFF
0
-0.9
VF2
Large Signal Voltage Gain
VF3
VF4
Common-mode Rejection Ratio
(Input Common-mode Voltage Range)
VF5
VF6
Power Supply Rejection Ratio
VF7
1.7
5.5
－Calculation－
1. Input Offset Voltage (VIO)
VIO =
2. Large Signal Voltage Gain (AV)
Av = 20Log
3. Common-mode Rejection Ratio (CMRR)
CMRR= 20Log ΔVICM × (1+RF/RS)
|VF4 - VF5|
[dB]
4. Power Supply Rejection Ratio (PSRR)
PSRR = 20Log ΔVDD × (1+ RF/RS)
|VF6 - VF7|
[dB]
|VF1|
-0.5
-2.5
0
1.8
0
3
4
[V]
1+RF/RS
ΔEK × (1+RF/RS)
|VF2-VF3|
[dB]
0.1µF
RF=50kΩ
VDD
EK
RS=50Ω
0.01µF
500kΩ
SW1
RI=1MΩ
15V
Vo
500kΩ
0.015µF
0.015µF
DUT
NULL
SW3
RS=50Ω
RI=1MΩ
1000pF
VF
RL
VICM
50kΩ
SW2
VSS
VRL
-15V
Figure 71. Test Circuit 1 (One Channel Only)
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Switch Condition for Test Circuit 2
SW No.
SW1 SW2 SW3 SW4 SW5 SW6 SW7 SW8 SW9 SW10 SW11 SW12
Supply Current
OFF OFF
ON
OFF
ON
OFF OFF OFF OFF OFF OFF OFF
Maximum Output Voltage RL=10 [kΩ]
OFF
ON
OFF OFF
ON
OFF OFF
Output Current
OFF
ON
OFF OFF
ON
OFF OFF OFF OFF
Slew Rate
OFF OFF
Gain Bandwidth
ON
ON
OFF OFF OFF
OFF OFF
ON
ON
ON
ON
OFF OFF
ON
ON
OFF
OFF OFF
OFF
ON
OFF OFF
ON
OFF OFF OFF
ON
OFF OFF
ON
SW3
R2 100kΩ
SW4
●
VDD=3V
－
SW1
SW2
＋
SW5
SW6
SW7
SW8
SW9
RL
CL
SW10
SW11 SW12
R1
1kΩ
VSS
IN-
IN+
Vo
Figure 72. Test Circuit 2 (each channel)
Input Voltage
Output Voltage
1.8 V
1.8 V
SR = Δ V / Δ t
90%
ΔV
1.8 V P- P
10%
0V
0V
t
t
Δt
Input Wave
Output Wave
Figure 73. Slew Rate Input Output Wave
R2=100kΩ
R2=100kΩ
VDD
R1=1kΩ
IN
R1//R2
VSS
VDD
R1=1kΩ
OUT1
=1Vrms
OUT2
R1//R2
VSS
CS=20Log
100×OUT1
OUT2
Figure 74. Test Circuit 3
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Examples of Circuit
○Voltage Follower
Voltage gain is 0dB.
VDD
Using this circuit, the output voltage (OUT) is configured
to be equal to the input voltage (IN). This circuit also
stabilizes the output voltage (OUT) due to high input
impedance and low output impedance. Computation for
output voltage (OUT) is shown below.
OUT
IN
OUT=IN
VSS
Figure 75. Voltage Follower Circuit
○Inverting Amplifier
R2
For inverting amplifier, input voltage (IN) is amplified by
a voltage gain and depends on the ratio of R1 and R2.
The out-of-phase output voltage is shown in the next
expression
VDD
IN
R1
OUT
OUT=-(R2/R1)・IN
This circuit has input impedance equal to R1.
VSS
Figure 76. Inverting Amplifier Circuit
○Non-inverting Amplifier
R1
R2
For non-inverting amplifier, input voltage (IN) is amplified
by a voltage gain, which depends on the ratio of R1 and
R2. The output voltage (OUT) is in-phase with the input
voltage (IN) and is shown in the next expression.
VDD
OUT
OUT=(1 + R2/R1)・IN
Effectively, this circuit has high input impedance since its
input side is the same as that of the operational
amplifier.
IN
VSS
Figure 77. Non-inverting Amplifier Circuit
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Power Dissipation
Power dissipation (total loss) indicates the power that the IC can consume at TA=25°C (normal temperature). As the IC
consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature
that the IC can accept is limited. This depends on the circuit configuration, manufacturing process, and consumable power.
Power dissipation is determined by the allowable temperature within the IC (maximum junction temperature) and the thermal
resistance of the package used (heat dissipation capability). Maximum junction temperature is typically equal to the
maximum storage temperature. The heat generated through the consumption of power by the IC radiates from the mold
resin or lead frame of the package. Thermal resistance, represented by the symbol θJA°C/W, indicates this heat dissipation
capability. Similarly, the temperature of an IC inside its package can be estimated by thermal resistance.
Figure 78 (a) shows the model of the thermal resistance of a package. The equation below shows how to compute for the
Thermal resistance (θJA), given the ambient temperature (TA), maximum junction temperature (TJmax), and power dissipation
(PD).
θJA = (TJmax-TA) / PD
°C/W
The Derating curve in Figure 78 (b) indicates the power that the IC can consume with reference to ambient temperature.
Power consumption of the IC begins to attenuate at certain temperatures. This gradient is determined by Thermal resistance
(θJA), which depends on the chip size, power consumption, package, ambient temperature, package condition, wind velocity,
etc. This may also vary even when the same of package is used. Thermal reduction curve indicates a reference value
measured at a specified condition. Figure 78(c) to (h) shows an example of the derating curve for BU7441G, BU7441SG,
BU7442xxx, BU7442Sxxx, BU7444F and BU7444SF.
Power dissipation of LSI [W]
PDmax
°C/W
Power dissipation of IC
θJA=(TJmax-TA)/ PD
Ambient temperature TA [ °C ]
P2
θJA2 < θJA1
P1
θJA2
TJmax
θJA1
0
Chip surface temperature TJ [ °C ]
75
100
125
Ambient temperature TA[C]
(b) Derating Curve
(a) Thermal Resistance
1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
50
25
0.6
BU7441G(Note 26)
0.4
0.6
BU7441SG(Note 26)
0.4
0.2
0.2
0.0
0
25
50
75
85
0.0
100
125
0
150
25
50
75
105
100
125
Ambient Temperature [°C]
Ambient Temperature [°C]
(c) BU7441G
(d) BU7441SG
150
Figure 78. Thermal Resistance and Derating Curve
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1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
Power Dissipation – continued
BU7442F(Note 27)
0.6
BU7442FVM(Note 28)
0.4
BU7442NUX(Note 29)
0.2
BU7442SFVM(Note 28)
0.4
BU7442SNUX(Note 29)
0.2
0.0
0
25
50
75
85
0.0
100
125
150
0
25
50
75
105
100
125
Ambient Temperature [°C]
Ambient Temperature [°C]
(e) BU7442xxx
(f) BU7442Sxxx
1.0
1.0
0.8
0.8
Power Dissipation [W]
Power Dissipation [W]
BU7442SF(Note 27)
0.6
0.6
BU7444F(Note 30)
0.4
0.2
150
0.6
BU7444SF(Note 30)
0.4
0.2
0.0
0
25
50
75
85
0.0
100
125
150
0
25
50
75
105
100
125
Ambient Temperature [°C]
Ambient Temperature [°C]
(g) BU7444F
(h) BU7444SF
(Note 26)
(Note 27)
(Note 28)
(Note 29)
(Note 30)
Unit
5.4
5.5
4.7
4.1
4.5
mW/C
150
When using the unit above TA=25°C, subtract the value above per Celsius degree. Permissible dissipation is the value
when FR4 glass epoxy board 70mm×70mm×1.6mm (copper foil area less than 3%) is mounted
Figure 78. Thermal Resistance and Derating Curve
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the P D stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the P D rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
12.
Regarding the Input Pin of the IC
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power
supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have
voltages within the values specified in the electrical characteristics of this IC.
13.
Unused Circuits
When there are unused op-amps, it is recommended that they are
connected as in Figure 79, setting the non-inverting input terminal to a
potential within the in-phase input voltage range (VICM).
Keep this potential
14.
Input Voltage
Applying VDD+0.3V to the input terminal is possible without causing
deterioration of the electrical characteristics or destruction, regardless of
the supply voltage. However, this does not ensure normal circuit
operation. Please note that the circuit operates normally only when the
input voltage is within the common mode input voltage range of the
electric characteristics.
in VICM
VDD
VICM
VSS
Figure 79. Example of Application Circuit
for Unused Op-amp
15. Power Supply(single/dual)
The op-amp operates when the voltage supplied is between VDD and
VSS. Therefore, the single supply op-amp can be used as dual supply
op-amp as well.
16.
Output Capacitor
If a large capacitor is connected between the output pin and VSS pin, current from the charged capacitor will flow into
the output pin and may destroy the IC when the VDD pin is shorted to ground or pulled down to 0V. Use a capacitor
smaller than 0.1uF between output pin and VSS pin.
17.
Oscillation by Output Capacitor
Please pay attention to the oscillation by output capacitor and in designing an application of negative feedback loop
circuit with these ICs.
18.
Latch up
Be careful of input voltage that exceed the VDD and VSS. When CMOS device have sometimes occur latch up and
protect the IC from abnormaly noise.
19.
Decupling Capacitor
Insert the decupling capacitance between VDD and VSS, for stable operation of operational amplifier.
20.
Radiation Land
The VSON008X2030 package has a radiation land in the center of the back. Please connect to VSS potenital or don't
connect to other terminal.
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Physical Dimensions, Tape and Reel Information
Package Name
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Physical Dimensions, Tape and Reel Information – continued
Package Name
SOP8
(Max 5.35 (include.BURR))
(UNIT : mm)
PKG : SOP8
Drawing No. : EX112-5001-1
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Datasheet
Physical Dimensions, Tape and Reel Information – continued
Package Name
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© 2013 ROHM Co., Ltd. All rights reserved.
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MSOP8
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Datasheet
Physical Dimensions, Tape and Reel Information – continued
Package Name
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
VSON008X2030
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Datasheet
Physical Dimensions, Tape and Reel Information – continued
Package Name
SOP14
(Max 9.05 (include.BURR))
(UNIT : mm)
PKG : SOP14
Drawing No. : EX113-5001
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Datasheet
Marking Diagrams
SSOP5(TOP VIEW)
SOP8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
1PIN MARK
LOT Number
MSOP8(TOP VIEW)
VSON008X2030 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
SOP14(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
Product Name
BU7441
BU7441S
BU7442
Package Type
G
SSOP5
F
SOP8
FVM
MSOP8
NUX
VSON008X2030
F
BU7442S
BU7444
BU7444S
MSOP8
NUX
VSON008X2030
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
A2
B8
7442
SOP8
FVM
F
Marking
SOP14
7442S
BU7444F
BU7444SF
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BU7441SG
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BU7442Sxxx
Datasheet
BU7444F BU7444SF
Land Pattern Data
All dimensions in mm
Land length
Land width
≧ℓ 2
b2
Land pitch
e
Land space
MIE
SSOP5
0.95
2.4
1.0
0.6
SOP8
1.27
4.60
1.10
0.76
MSOP8
0.65
2.62
0.99
0.35
VSON008X2030
0.50
2.20
0.70
0.27
SOP14
1.27
4.60
1.10
0.76
PKG
SSOP5
SOP8, MSOP8, SOP14
e
MIE
?
e
ℓ 2
MIE
e
b2
b2
ℓ 2
D3
MIE
ℓ 2
VSON008X2030
Package
E3
VSON008X2030
Radiation
Land length
D3
1.20
Radiation
Land width
E3
1.60
All dimensions in mm
Thermal Via
Pitch
Diameter
-
Φ0.3
Thermal Via
e
b2
Revision History
Date
Revision
Changes
20.Sep.2013
001
New Release
13.Feb.2015
002
Correction of Figure number (page.30 Power Dissipation)
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.004
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.004
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BU7441G - Web Page
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Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BU7441G
SSOP5
3000
3000
Taping
inquiry
Yes