ON FCDN608 1-channel esd protector Datasheet

FCDN608-UBM
1-Channel ESD Protector
Product Description
The FCDN608-UBM provides robust ESD protection for sensitive
parts that may be subjected to electrostatic discharge (ESD). The tiny
form factor and single pad allows it to be used in very confined spaces.
The electrical ‘back-to-back zener’ configuration provides
symmetrical ESD protection in cases where nodes with AC signals are
present. This device is designed and characterized to safely dissipate
ESD strikes of at least 15 kV, according to the MIL-STD-883
(Method 3015) specification for Human Body Model (HBM) ESD.
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Features
 Compact Die Protects from ESD Discharges
 Almost No Conduction at Signal Amplitudes Less than 5 V
 ESD Protection to over 15 kV (Human Body Model HBM) per
MIL_STD_883 International ESD Standard
Applications
 LED Lighting
 Modules
 Interface Circuits
Signal
Node
Signal
Node
Reference
Node
1
2
3
Top View
1
Wirebond Pad
2
DAP
3
4
Test Point
(Green Pad)
Reference Node
(Backside is the Bare Silicon)
Figure 1. Electrical Schematic and Top View
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 3
1
Publication Order Number:
FCDN608−UBM/D
FCDN608−UBM
Table 1. PIN DESCRIPTIONS
FCDN608−UBM (Schematic and Top View)
Designation
Schematic
Top View
Metal Composition
1
Signal Node
Wirebond Pad
Al
2
Signal Node
DAP
Cu
3
Reference Node
Test Point
−
4
Reference Node
N/A
Bare Silicon
Table 2. ORDERING INFORMATION
Ordering Part Number
DAP (Die Attach Pad)
Backside Metal
BG Thickness
Shipping Method
FCDN608−UBM
Cu (Copper)
Bare Silicon
10 mils
Wafer Form
SPECIFICATIONS
Table 3. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Junction Temperature Range
−40 to +150
C
Storage Junction Temperature Range
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. STANDARD OPERATING CONDITIONS
Parameter
Operating Junction Temperature Range
Rating
Units
−40 to +150
C
Table 5. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
ILEAK
VCL
VESD
VCL_ESD
RDYN
CIN
Parameter
Test Conditions
Min
Typ
Leakage Current
V = 5 V, 25C
V = −10 V, 25C
V = 5 V, 150C
Clamp Voltage on Signal Node
Positive Polarity
Negative Polarity
TA = 25C
at 10 mA
at −10 mA
ESD Protection − Withstand Voltage:
Human Body Model
(MIL−STD−883, Method 3015)
TA = 25C
Clamping Voltage on Signal Node for Transients
Positive Polarity
Negative Polarity
IPP = 1 A, tP = 8/20 ms
Positive Transients
Negative Transients
+7
−12
Dynamic Resistance
RDYN+
RDYN−
IPP = 1 A, tP = 8/20 ms
Positive Transients
Negative Transients
0.2
0.4
Input Capacitance
At 1 MHz, 30 mV osc. Level,
0 VDC Bias (Note 2)
At 1 MHz, 30 mV osc. Level,
3 VDC Bias
+5
−14
+7
−11.5
Max
Units
+0.35
−0.35
4.0
mA
mA
mA
+9
−10
V
kV
15
1. Operating characteristics are over standard operating conditions unless otherwise specified.
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2
175
120
V
W
pF
FCDN608−UBM
MECHANICAL DETAILS
Table 6. MECHANICAL SPECIFICATIONS
Parameter
Condition
Units
Composition
Silicon Wafer,
n+ Doped
Die Shape
Rectangular
Length (Stepping Size)
1560
mm
Width (Stepping Size)
1160
mm
BG Thickness
10
mils
Saw Street Widths (Space
between Devices on Wafer)
(Note 1)
40 (X−Direction)
40 (Y−Direction)
mm
Die Attach Pad Length
1000
mm
Die Attach Pad Width
1000
mm
Die Attach Pad (DAP)
Cu (Copper)
Backside Metal
Bare Silicon
Reflective Surface
1100 mm x 1.500 mm
+ 250 mm
Submount
Pitch (Solid
Line Area)
1560 mm x
1160 mm
Stepping Size
50 mm
50 mm
Soldable DAP
1000 mm x 1000 mm
250 mm
Test Pad Opening
90 mm x 90 mm
Figure 2. Die Dimensions
1. The saw street is defined as the passivation−free area between
devices.
Passivation−Free
Saw Street: 40 mm
+
+
+
+
Passivation−Free
Saw Street: 40 mm
Figure 3. Die−Array on Wafer
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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FCDN608−UBM/D
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