Ordering number : ENA1465A ECH8672 P-Channel Power MOSFET http://onsemi.com –20V, –3.5A, 85mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit --20 V ±10 V --3.5 A --30 A When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C PW≤10μs, duty cycle≤1% This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8672-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TT 5 LOT No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/42809PE MSIM TC-00001909 No. A1465-1/7 ECH8672 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 2.1 --1 μA ±10 μA --1.3 3.6 V S 65 85 mΩ 98 137 mΩ 155 235 mΩ 320 pF 66 pF Crss 50 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 21 ns 37 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--3.5A IS=--3.5A, VGS=0V 32 ns 4.0 nC 0.6 nC 1.1 nC --0.84 --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --1.5A RL=6.67Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8672 P.G 50Ω S Ordering Information Device ECH8672-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1465-2/7 ECH8672 ID -- VDS --2.0 .8 V --5.0 --4.5 --1 --8V --3.5 V --2.5 V --2.5 --10V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A --1A 120 --1.5A 90 60 30 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V C 25 °C --1.0A , I D= V 5 . 2 = -VGS .5A I = --1 --4.5V, D = V GS 120 100 80 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT14658 IS -- VSD 7 5 VGS=0V 2 3 2 = Ta 5 --2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 140 3 °C °C 75 1.0 °C 25 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --0.5 --0.6 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 --0.01 --0.3 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 10 td(on) 7 --0.9 --1.0 --1.1 IT14538 f=1MHz 5 Ciss 3 7 --0.8 Ciss, Coss, Crss -- VDS 7 2 100 --0.7 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4.5V 3 --0.4 IT14537 SW Time -- ID 5 Switching Time, SW Time -- ns = VGS = --0 V, I D --1.8 Ambient Temperature, Ta -- °C 5 0.1 --0.01 160 0 --60 --40 --8 VDS= --10V 7 .5A 180 IT14657 | yfs | -- ID 10 200 25° C --2 5°C 0 220 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 IT14534 RDS(on) -- Ta 240 210 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 150 0 IT14533 RDS(on) -- VGS 240 --1.5 --0.5 VGS= --1.2V --0.1 --2.0 --1.0 --0.5 0 --2.5 --25 ° --1.5V --3.0 75° C --1.0 --3.5 Ta= Drain Current, ID -- A V --1.5 0 ID -- VGS VDS= --10V --4.0 --4. 5 Drain Current, ID -- A --3.0 2 100 Coss Crss 7 5 5 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14539 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14540 No. A1465-3/7 ECH8672 VGS -- Qg 5 VDS= --10V ID= --3.5A --4.0 3 2 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --0.5 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta 1.8 4.0 4.5 IT14659 10 0μ 1m s s 10 10 ms 0m s ID= --3.5A DC op era tio n( Ta = 3 2 --0.1 7 5 0 PW≤10μs --1.0 7 5 --1.0 0 Allowable Power Dissipation, PD -- W --10 7 5 3 2 ASO IDP= --30A 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14660 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 1u 0.8 di ss nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14661 No. A1465-4/7 ECH8672 Embossed Taping Specification ECH8672-TL-H No. A1465-5/7 ECH8672 Outline Drawing ECH8672-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1465-6/7 ECH8672 Note on usage : Since the ECH8672 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1465-7/7