Single N-channel MOSFET ELM34406AA-N ■General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Ta=100°C Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit Note 40 V ±20 V Pulsed drain current 7.5 6.5 20 Id Idm Tc=25°C Power dissipation Tc=100°C Junction and storage temperature range Pd Tj, Tstg A A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 Typ. 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM34406AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=30V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 40 Vds=32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.0 20 1.5 μA ±250 nA 2.5 V A Vgs=10V, Id=7.5A 21 28 mΩ Vgs=4.5V, Id=6.5A 30 42 mΩ Vds=10V, Id=7.5A If=Is, Vgs=0V 19 1 S V Is 1.3 A Ism 2.6 A Gfs Vsd 1 1 1 1 3 Ciss 790 pF Coss Vgs=0V, Vds=10V, f=1MHz Crss 175 65 pF pF Gate-source charge Qg Qgs 16.0 2.5 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 2.1 2.2 4.4 nC ns 2 2 Turn-on rise time Turn-off delay time tr 7.5 15.0 ns 2 11.8 21.3 ns 2 7.4 ns ns 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Vgs=10V, Vds=20V, Id=7.5A Vgs=10V, Vds=20V, Id=1A td(off) Rgen=6Ω Turn-off fall time Body diode reverse recovery time tf trr If=5A, dIf/dt=100A/μs 3.7 15.5 Body diode reverse recovery charge Qrr If=5A, dIf/dt=100A/μs 7.9 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 nC NIKO-SEM N-Channel Logic Level Enhancement P2804BVG SingleMode N-channel MOSFET Field Effect Transistor SOP-8 Lead-Free ELM34406AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 -55° C 0.1 0.01 0.001 4-3 25° C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement Mode Field Effect Transistor ELM34406AA-N 4-4 P2804BVG SOP-8 Lead-Free