NXP BZX79-B7V5 Voltage regulator diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 25
2002 Feb 27
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
k
a
APPLICATIONS
MAM239
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb = 50 °C; note 1
−
400
mW
Tamb = 50 °C; note 2
−
500
mW
40
W
tp = 100 μs; square wave;
−
Tj = 25 °C prior to surge; see Fig.3
250
UNIT
mA
PZSM
non-repetitive peak reverse power
dissipation
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
2002 Feb 27
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
2
MAX.
UNIT
0.9
V
NXP Semiconductors
Product data sheet
Voltage regulator diodes
SYMBOL
IR
2002 Feb 27
BZX79 series
PARAMETER
CONDITIONS
MAX.
UNIT
reverse current
BZX79-B/C2V4
VR = 1 V
50
μA
BZX79-B/C2V7
VR = 1 V
20
μA
BZX79-B/C3V0
VR = 1 V
10
μA
BZX79-B/C3V3
VR = 1 V
5
μA
BZX79-B/C3V6
VR = 1 V
5
μA
BZX79-B/C3V9
VR = 1 V
3
μA
BZX79-B/C4V3
VR = 1 V
3
μA
BZX79-B/C4V7
VR = 2 V
3
μA
BZX79-B/C5V1
VR = 2 V
2
μA
BZX79-B/C5V6
VR = 2 V
1
μA
BZX79-B/C6V2
VR = 4 V
3
μA
BZX79-B/C6V8
VR = 4 V
2
μA
BZX79-B/C7V5
VR = 5 V
1
μA
BZX79-B/C8V2
VR = 5 V
700
nA
BZX79-B/C9V1
VR = 6 V
500
nA
BZX79-B/C10
VR = 7 V
200
nA
BZX79-B/C11
VR = 8 V
100
nA
BZX79-B/C12
VR = 8 V
100
nA
BZX79-B/C13
VR = 8 V
100
nA
BZX79-B/C15 to BZX79-B/C75
VR = 0.7VZnom
50
nA
3
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. approx.
±5% (C)
at IZtest = 1 mA
MIN.
MIN.
TYP.
MAX.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP. NON-REPETITIVE PEAK
Cd (pF)
REVERSE CURRENT
IZSM (A)
at f = 1 MHz;
VR = 0 V
at tp = 100 μs; Tamb = 25 °C
at IZtest = 5 mA
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
4
2.45
2.2
2.6
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
−3.5
−2.0
0
450
6.0
3V0
2.94
3.06
2.8
3.2
325
600
80
95
−3.5
−2.1
0
450
6.0
3V3
3.23
3.37
3.1
3.5
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60
20.40
18.8
21.2
60
225
15
55
12.3
15.6
18.0
60
1.5
22
21.60
22.40
20.8
23.3
60
250
20
55
14.1
17.6
20.0
60
1.25
24
23.50
24.50
22.8
25.6
60
250
25
70
15.9
19.6
22.0
55
1.25
Product data sheet
2.35
BZX79 series
2V4
NXP Semiconductors
BZX79Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
2002 Feb 27
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP. NON-REPETITIVE PEAK
Cd (pF)
REVERSE CURRENT
IZSM (A)
at f = 1 MHz;
VR = 0 V
at tp = 100 μs; Tamb = 25 °C
5
Tol. ±2% (B)
Tol. approx.
±5% (C)
MIN.
MAX.
MIN.
27
26.50
27.50
25.1
28.9
65
300
25
80
18.0
22.7
25.3
50
1.0
30
29.40
30.60
28.0
32.0
70
300
30
80
20.6
25.7
29.4
50
1.0
33
32.30
33.70
31.0
35.0
75
325
35
80
23.3
28.7
33.4
45
0.9
36
35.30
36.70
34.0
38.0
80
350
35
90
26.0
31.8
37.4
45
0.8
39
38.20
39.80
37.0
41.0
80
350
40
130
28.7
34.8
41.2
45
0.7
43
42.10
43.90
40.0
46.0
85
375
45
150
31.4
38.8
46.6
40
0.6
47
46.10
47.90
44.0
50.0
85
375
50
170
35.0
42.9
51.8
40
0.5
51
50.00
52.00
48.0
54.0
90
400
60
180
38.6
46.9
57.2
40
0.4
56
54.90
57.10
52.0
60.0
100
425
70
200
42.2
52.0
63.8
40
0.3
62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
MAX.
at IZtest = 0.5 mA at IZtest = 2 mA
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
NXP Semiconductors
BZX79Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
2002 Feb 27
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
Product data sheet
BZX79 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point lead length 8 mm.
300
K/W
Rth j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
103
handbook, full pagewidth
δ=1
Rth j-a
0.75
0.50
0.33
0.20
(K/W)
102
0.10
0.05
0.02
0.01
≤0.001
10
tp
T
1
10−1
1
10
102
103
104
δ=
6
T
tp (ms)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27
tp
105
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3
Fig.4
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
0.8
1
VF (V)
Typical forward current as a function of
forward voltage.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
0
20
40
IZ (mA)
−5
60
0
4
8
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj = 25 to 150 °C.
BZX79-B/C4V7 to BZX79-B/C12.
Fig.5
Fig.6
16
IZ (mA)
20
Tj = 25 to 150 °C.
Temperature coefficient as a function of
working current; typical values.
2002 Feb 27
12
7
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
G1
UNIT
b
max.
D
max.
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
EIAJ
SOD27
A24
DO-35
SC-40
2002 Feb 27
8
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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2002 Feb 27
9
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613514/03/pp10
Date of release: 2002 Feb 27
Document order number: 9397 750 09387