FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCP190N60 FCPF190N60 600 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Continuous (TC = 100oC) (Note 1) V ±30 20.2 20.2* 12.7 12.7* IDM Drain Current Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ (Note 2) 60.6* A 400 MOSFET dv/dt mJ 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL 60.6 A EAS dv/dt - Pulsed Unit V - Derate Above 25oC V/ns 20 208 39 W 1.67 0.31 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP190N60 FCPF190N60 RθJC Thermal Resistance, Junction to Case, Max. 0.6 3.2 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 1 Unit oC/W www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET December 2013 Part Number FCP190N60 Top Mark FCP190N60 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF190N60 FCPF190N60 TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ID = 10 mA, Referenced to 25oC - 0.67 - V/oC VGS = 0 V, ID = 20 A - 700 - V Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain to Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 480 V, VGS = 0 V V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±20 V, VDS = 0 V - - ±100 2.5 - 3.5 V - 0.17 0.199 Ω - 21 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 10 A VDS = 20 V, ID = 10 A Dynamic Characteristics - 2220 2950 pF - 1630 2165 pF - 85 128 pF - 42 - pF VDS = 0 V to 480 V, VGS = 0 V - 160 - pF VDS = 380 V, ID = 10 A, VGS = 10 V - 57 74 nC - 9 - nC - 21 - nC - 1 - Ω - 20 50 ns - 10 30 ns - 64 138 ns - 5 20 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25 V, VGS = 0 V f = 1 MHz (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 10 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time - 280 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/μs - 3.8 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 2 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 1 o 150 C 10 o 25 C o -55 C *Notes: 1. 250μs Pulse Test o 0.3 0.1 2. TC = 25 C 1 VDS, Drain to Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 VGS, Gate to Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.4 0.3 VGS = 10V 0.2 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.1 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics VGS, Gate to Source Voltage [V] 1000 Coss 100 1 0.5 0.1 1.4 10 Ciss 10 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.5 RDS(ON) [Ω], Drain to Source On-Resistance 2 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 6 4 2 0 600 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 10A 0 20 40 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 10A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area for FCP190N60 100 2.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Safe Operating Area for FCPF190N60 100 10μs 10μs 10 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) 0.1 100μs 10 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) *Notes: *Notes: 0.1 o o 1. TC = 25 C 1. TC = 25 C o 0.01 0.1 o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain to Source Voltage [V] 0.01 0.1 1000 25 10 20 8 15 10 5 0 25 1 10 100 VDS, Drain to Source Voltage [V] 1000 Figure 12. Eoss vs. Drain to Source Voltage EOSS, [μJ] ID, Drain Current [A] Figure 11. Maximum Drain Current vs. Case Temperature 2. TJ = 150 C 3. Single Pulse 6 4 2 50 75 100 125 o TC, Case Temperature [ C] ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 0 150 4 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve for FCP190N60 θ JC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration [sec] [sec] -1 10 1 Figure 14. Transient Thermal Response Curve for FCPF190N60 ZθJC (t), Thermal Response [o]C/W] Thermal Response [ZθJC 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 o 1. ZθJC(t) = 3.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 t2 *Notes: 0.01 -4 10 -3 -2 -1 10 10 10 1 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET IG = const. Figure 15. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 16. Resistive Switching Test Circuit & Waveforms VGS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 6 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 7 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Mechanical Dimensions Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 8 www.fairchildsemi.com FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET Mechanical Dimensions Figure 20. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C16 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. 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