BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 2110 to 2170 30 40 16.0 25 −38[1] −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: u Average output power = 40 W u Power gain = 16.0 dB u Efficiency = 25 % u IMD3 = −38 dBc u ACPR = −42 dBc n Easy power control n Integrated ESD protection n Enhanced ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2000 MHz to 2200 MHz) n Internally matched for ease of use BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G22-180RN (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF6G22LS-180RN (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF6G22-180RN Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF6G22LS-180RN - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 49 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 2 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 40 W BLF6G22-180RN 0.50 K/W BLF6G22LS-180RN 0.37 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 2.0 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1.62 A 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 45 - A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 13.5 A - 19.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A - 0.06 - Ω Crs feedback capacitance VGS = 0 V; VDS = 30 V; f = 1 MHz - 3.3 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 30 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 40 - W Gp power gain PL(AV) = 40 W 15.0 16.0 - dB RLin input return loss PL(AV) = 40 W - −11 −8 dB ηD drain efficiency PL(AV) = 40 W 22 25 - % IMD3 third order intermodulation distortion PL(AV) = 40 W - −38 −34.5 dBc ACPR adjacent channel power ratio PL(AV) = 40 W - −42 −39 dBc 7.1 Ruggedness in class-AB operation The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 30 V; IDq = 1400 mA; PL = 180 W (CW); f = 2170 MHz. BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 3 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aai641 17 60 ηD (%) Gp (dB) Gp 16 40 ηD 15 20 14 0 60 0 180 120 PL (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone CW 001aai642 17 Gp (dB) 60 ηD (%) Gp 16 001aai643 −20 IMD (dBc) −30 40 −40 IMD5 −50 ηD 15 IMD3 IMD7 20 −60 14 0 60 0 180 120 −70 0 PL(PEP) (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. Fig 2. 40 60 80 100 PL(PEP) (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G22-180RN_22LS-180RN_1 Product data sheet 20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 4 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aai644 17 ηD (%) Gp (dB) 001aai645 −30 IMD3 ACPR (dBc) −35 60 Gp 16 IMD3 40 −40 ACPR −45 ηD 15 20 −50 14 −55 0 0 20 40 60 0 20 40 PL(AV) (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. Fig 4. 60 PL(AV) (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values 8. Test information VGG R2 C7 C8 C6 VDD C5 C20 C4 R1 C3 C13 C14 C15 C16 C2 C1 C9 input C10 C12 C17 C18 C11 output C19 001aai646 The drawing is not to scale. Fig 6. Test circuit for operation at 2200 MHz BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 5 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor R2 C20 C8 C7 C15 C6 C5 C4 C3 C16 C13 C14 R1 C2 C11 C9 C1 C10 C17 C18 C19 C12 001aai647 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components (see Figure 6 and Figure 7) The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with εr = 3.5 and thickness = 0.76 mm. Component Description Value C1, C3, C12, C13 multilayer ceramic chip capacitor 13 pF [1] ATC 100B or capacitor of same quality multilayer ceramic chip capacitor 1.4 pF [1] ATC 100B or capacitor of same quality C4, C5, C14, C17 multilayer ceramic chip capacitor 220 nF Vishay or capacitor of same quality C6, C7 multilayer ceramic chip capacitor 100 nF Vishay or capacitor of same quality C8 multilayer ceramic chip capacitor 10 µF C9 multilayer ceramic chip capacitor 12 pF [1] ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality C2 Remarks C10 multilayer ceramic chip capacitor 1.1 pF [1] C11 multilayer ceramic chip capacitor 0.7 pF [1] C15, C18 multilayer ceramic chip capacitor 1.5 µF C16, C19 multilayer ceramic chip capacitor 10 µF; 50 V C20 electrolytic capacitor 220 µF; 63 V L1 ferrite SMD bead - R1 SMD resistor 2.7 Ω R2, R3 SMD resistor 6.8 Ω [1] TDK or capacitor of same quality Ferroxcube BDS 3/3/4.6-4S2 or equivalent Solder vertically. BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 6 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 8. EUROPEAN PROJECTION Package outline SOT502A BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 7 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 9. 0.390 0.010 0.380 Package outline SOT502B BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 8 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G22-180RN_22LS-180RN_1 20081120 Product data sheet - - BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 9 of 11 BLF6G22(LS)-180RN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G22-180RN_22LS-180RN_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 20 November 2008 10 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 November 2008 Document identifier: BLF6G22-180RN_22LS-180RN_1