, Una. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N channel Enhancement mode Avalanche-rated BUZ 31 Pin1 Type VDS A3 ^DS(on) Package BUZ 31 200V 14.5 A 0.2 Q TO-220 AB Pin 2 Pin 3 Maximum Ratings Parameter Symbol Continuous drain current ID Tc = 30 °C Pulsed drain current Values Unit A 14.5 /Dpuls 7C = 25 °C 58 Avalanche currentjimited by Tjmax /AR 14.5 Avalanche energy, periodic limited by 7jmax EAR 9 Avalanche energy, single pulse £AS mJ /D = 14.5 A, VDD = 50 V, f?GS = 25 Q L = 1.42mH, Tj = 25°C Gate source voltage Power dissipation 200 VGS Ptoi Tc = 25 °C Operating temperature ±20 W 95 T\g Storage temperature -55... + 150 ^thJC <1.32 Thermal resistance, chip to ambient ^thJA 75 IEC climatic category, DIN IEC 68-1 °C -55... + 150 Thermal resistance, chip case DIN humidity category, DIN 40 040 V K/W E 55/150/56 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors BUZ 31 Electrical Characteristics, at 71 = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, /D = 0.25 mA, 7] = 25 °C Gate threshold voltage \/GS=Vbs, /D = 1 rnA Zero gate voltage drain current V ^(BR)DSS 200 - - ^GS(th) 2.1 3 4 MA /DSS VDS = 200 V, VGS = 0 V, 7] = 25 °C - 0.1 1 VDS = 200 V, VGS = 0 V, 7] = 125 °C - 10 100 Gate-source leakage current VGS = 20 v, Vbs = o V Drain-Source on-resistance 1/GS = 10V, /D = 9A nA /GSS - 10 100 Q ^DS(on) - 0.16 0.2 BUZ 31 Electrical Characteristics, at 7i = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance 5 \/DS^ 2 * ID * ^DS(on)max, /D = 9 A Input capacitance PF 840 1120 180 270 95 150 Coss VQS = 0 V, VDS = 25 V, f= 1 MHz Reverse transfer capacitance 10 ciss I/GS = 0 V, VDS = 25 V, f= 1 MHz Output capacitance S flfe Crss V/GS = 0 V, Vbs = 25 V, f= 1 MHz Turn-on delay time VDD = 30 v, VGS = 1 o v, /D = 3 A RGS = 500 ^d(on) Rise time fr ns 12 20 50 75 150 200 60 80 VbD = 30V, i/ G S =10V,/ D = 3 A RGS = 500 Turn-off delay time 'd(off) l/DD = 30V, l/ G S =10V, /D = 3 A RGS = 500 Fall time VDD = 30V, VGS = 10V, /D = 3 A RGS = 500 ff BUZ 31 Electrical Characteristics, at T, = 25°C, unless otherwise specified Parameter Symbol Unit Values min. typ. max. Reverse Diode Inverse diode continuous forward current 7C = 25 °C Inverse diode direct current.pulsed VR = 100 V, /F=/s, dip/tit = 100 A/us 14.5 - - 58 V - 1.6 1.1 ns trr V/R = 100 V, /F=/s, d/F/df = 100 A/MS Reverse recovery charge - VSD VG$ = 0 V, /F = 29 A Reverse recovery time /SM Tc = 25 °C Inverse diode forward voltage A /S - 170 - uC Qrr - 1.1 -