AP4N1R1CDT-A Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ 100% Rg & UIS Test ▼ Ultra Low On-resistance BVDSS RDS(ON) ID4 D 45V 1.15mΩ 265A G ▼ RoHS Compliant & Halogen-Free S Description AP4N1R1C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PDFN 5x6 package used advanced package and silicon combination for ultra low on-resistance and high efficiency, special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. D D D PDFN 5x6 D G S S S Bottom View Top View . o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ 4 Total Power Dissipation 3 5 Rating Units 45 V +20 / -12 V 265 A 50.6 A 40.5 A 350 A 138.8 W 5 W 256 mJ EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Unit 0.9 ℃/W 25 ℃/W 1 201605191 AP4N1R1CDT-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=1mA 45 - - V VGS=10V, ID=20A - - 1.15 mΩ VGS=4.5V, ID=20A - - 1.85 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2 V gfs Forward Transconductance VDS=5V, ID=20A - 120 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 172 275 nC Qgs Gate-Source Charge VDS=20V - 30 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 17 - nC td(on) Turn-on Delay Time VDS=20V - 15 - ns tr Rise Time ID=30A - 64 - ns td(off) Turn-off Delay Time RG=1.6Ω - 140 - ns tf Fall Time VGS=10V - 22 - ns Ciss Input Capacitance VGS=0V - 11600 18560 pF Coss Output Capacitance VDS=20V - 1330 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 3 6 Ω Min. Typ. IS=20A, VGS=0V - - 1.3 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=20A, VGS=0V, - 54 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 80 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 o 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec; 60 C/W at steady state. 4.Package limitation current is 100A . 5.Starting Tj=25oC , VDD=30V , L=0.5mH , RG=25Ω . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4N1R1CDT-A 160 320 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V 240 T C = 150 o C ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 160 80 120 80 40 0 0 0 0.4 0.8 1.2 1.6 2 0 0 V DS , Drain-to-Source Voltage (V) 1 1 2 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 1.8 I D =20A V G =10V I D = 20 A o T C =25 C 1.6 1.6 1.4 . Normalized RDS(ON) RDS(ON) (mΩ) 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V 1.2 1.2 0.8 1 0.4 2 4 6 8 10 -100 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 2.0 I D =250uA Normalized VGS(th) 1.6 IS(A) 10 T j =150 o C T j =25 o C 1.2 0.8 1 0.4 0.0 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4N1R1CDT-A 12 I D = 20 A V DS =20V 10 12000 C iss 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 16000 6 8000 4 4000 2 0 C oss C rss 0 0 40 80 120 160 200 240 1 11 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 31 41 51 Fig 8. Typical Capacitance Characteristics 1 10us Operation in this area limited by RDS(ON) 100 10 100us . 1 1ms 10ms 0.1 T C =25 o C Single Pulse DC Normalized Thermal Response (Rthjc) 1000 ID (A) 21 V DS , Drain-to-Source Voltage (V) 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T c 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 200 320 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 160 240 160 Limited by package 120 80 T j =150 o C 80 o T j =25 C 40 o T j = -55 C 0 0 25 50 75 100 T C , Case Temperature ( 125 o C) Fig 11. Drain Current v.s. Case Temperature 150 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4 AP4N1R1CDT-A 160 2 I D =1mA PD, Power Dissipation(W) Normalized BVDSS 1.6 1.2 0.8 120 80 40 0.4 0 0 -100 -50 T 0 j 50 100 150 0 , Junction Temperature ( o C) 50 100 150 o T C , Case Temperature( C) Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature 10 T j =25 o C RDS(ON) (mΩ) 8 6 . 4 2 4.5V V GS =10V 0 0 20 40 60 80 100 120 I D , Drain Current (A) Fig 15. Typ. Drain-Source on State Resistance 5 AP4N1R1CDT-A MARKING INFORMATION Part Number 4N1R1C YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6