AP9569GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Fast Switching Characteristic
D
D
▼ RoHS Compliant
G
S
SO-8
BVDSS
-40V
RDS(ON)
90mΩ
ID
-4.2A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-40
V
± 20
V
3
-4.2
A
3
-3.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-40
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200527051-1/4
AP9569GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-4A
-
-
90
mΩ
VGS=-4.5V, ID=-2A
-
-
130
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=± 20V
-
-
±100
nA
ID=-4A
-
8
13
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-20V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
23
-
ns
tf
Fall Time
RD=20Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.9A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
25
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2/4
AP9569GM
20
20
-10V
-7.0V
-5.0V
-4.5V
15
o
T A =150 C
10
V G =-3.0V
5
10
V G =-3.0V
5
0
0
0
2
4
6
0
8
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
260
I D =-4A
V G = -10V
I D =-2A
o
Normalized RDS(ON)
T A =25 C
210
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
15
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
160
1.4
1.0
110
0.6
60
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
Normalized -VGS(th) (V)
1.6
3
-IS(A)
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =150 o C
2
T j =25 o C
1.2
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9569GM
f=1.0MH
1000
C iss
I D = -4A
V DS = -30V
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
100
C oss
C rss
4
0
10
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
10
1ms
-ID (A)
9
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Rthja=125 oC/W
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
V DS =-5V
-ID , Drain Current (A)
15
QG
-4.5V
T j =25 o C
10
T j =150 o C
QGS
QGD
5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4