Diotec BC856 Smd general purpose pnp transistor Datasheet

BC856 ... BC860
BC856 ... BC860
IC
= 100 mA
hFE ~ 180/290/520
Tjmax = 150°C
SMD General Purpose PNP Transistors
SMD Universal-PNP-Transistoren
VCEO = 30...65 V
Ptot = 250 mW
Version 2017-12-06
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1
+0.1
1.1 -0.2
2.9 ±0.1
0.4+0.1
-0.05
Type
Code
2
1.9
RoHS
Pb
Mechanische Daten 1)
Taped and reeled
2=E
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
±0.1
1=B
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
EE
WE
1
1.3±0.1
2.4 ±0.2
3
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
EL
V
SOT-23 (TO-236)
3=C
Dimensions - Maße [mm]
3000 / 7“
Weight approx.
Gegurtet auf Rolle
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Type
Code
BC856A = 3A
BC856B = 3B
BC856C = 3C
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC860B = 3F
BC860C = 3G or 4G
BC859A = 3E
BC859B = 3F
BC859C = 3G or 4C
BC846 ... BC850
Maximum ratings 2)
Grenzwerte 2)
BC856
BC857
BC860
BC858
BC859
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
65 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
250 mW 3)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
2
3
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC856 ... BC860
Characteristics
Kennwerte
Tj = 25°C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
hFE
–
–
–
90
150
270
–
–
–
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
hFE
125
220
420
180
290
520
250
475
800
- VCEsat
–
–
–
–
300 mV
650 mV
- VBEsat
–
–
700 mV
900 mV
–
–
- VBE
600 mV
–
–
–
750 mV
820 mV
- ICBO
–
–
–
–
15 nA
4 µA
- IEBO
–
–
100 nA
fT
100 MHz
–
–
CCBO
–
4.5 pF
–
CEB0
–
9 pF
–
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, IC = - 2 mA
- VCE = 5 V, IC = - 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA
RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
< 420 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
2
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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