BC856 ... BC860 BC856 ... BC860 IC = 100 mA hFE ~ 180/290/520 Tjmax = 150°C SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren VCEO = 30...65 V Ptot = 250 mW Version 2017-12-06 Typical Applications Signal processing, Switching, Amplification Commercial grade 1 +0.1 1.1 -0.2 2.9 ±0.1 0.4+0.1 -0.05 Type Code 2 1.9 RoHS Pb Mechanische Daten 1) Taped and reeled 2=E Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) ±0.1 1=B Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) EE WE 1 1.3±0.1 2.4 ±0.2 3 Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) EL V SOT-23 (TO-236) 3=C Dimensions - Maße [mm] 3000 / 7“ Weight approx. Gegurtet auf Rolle 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Type Code BC856A = 3A BC856B = 3B BC856C = 3C Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC857A = 3E BC857B = 3F BC857C = 3G BC858A = 3E BC858B = 3F BC858C = 3G BC860B = 3F BC860C = 3G or 4G BC859A = 3E BC859B = 3F BC859C = 3G or 4C BC846 ... BC850 Maximum ratings 2) Grenzwerte 2) BC856 BC857 BC860 BC858 BC859 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 65 V 45 V 30 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 250 mW 3) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856 ... BC860 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C hFE – – – 90 150 270 – – – - VCE = 5 V, - IC = 2 mA Group A Group B Group C hFE 125 220 420 180 290 520 250 475 800 - VCEsat – – – – 300 mV 650 mV - VBEsat – – 700 mV 900 mV – – - VBE 600 mV – – – 750 mV 820 mV - ICBO – – – – 15 nA 4 µA - IEBO – – 100 nA fT 100 MHz – – CCBO – 4.5 pF – CEB0 – 9 pF – F – – 2 dB 1.2 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, IC = - 2 mA - VCE = 5 V, IC = - 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz BC856 ... BC858 BC859 ... BC860 Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 420 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG