FDS8876
N-Channel PowerTrench® MOSFET
30V, 12.5A, 8.2mΩ
General Description
Features
rDS(ON) = 8.2mΩ, VGS = 10V, ID = 12.5A
rDS(ON) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
High performance trench technology for extremely low
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(ON) and fast switching speed.
r DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
Branding Dash
5
1
2
3
4
5
4
6
3
7
2
8
1
SO-8
©2005 Fairchild Semiconductor Corporation
FDS8876 Rev. A
1
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
April 2005
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
VGS
Gate to Source Voltage
±20
V
12.5
A
11.4
A
Drain Current
Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W)
ID
o
o
Continuous (TA = 25 C, VGS = 4.5V, RθJA = 50 C/W)
Pulsed
EAS
PD
TJ, TSTG
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
105
mJ
Power dissipation
2.5
W
Derate above 25oC
20
mW/oC
Operating and Storage Temperature
o
-55 to 150
C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case (Note 2)
25
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
o
C/W
RθJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
85
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8876
Device
FDS8876
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
FDS8876
FDS8876_NL (Note 4)
SO-8
330mm
12mm
2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TA = 150oC
VGS = ±20V
30
-
-
V
-
-
1
-
-
250
µA
-
-
±100
nA
-
2.5
V
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = VDS, ID = 250µA
1.2
ID = 12.5A, VGS = 10V
-
0.0068 0.0082
ID = 11.4A, VGS = 4.5V
-
0.0083 0.0102
ID = 12.5A, VGS = 10V,
TA = 150oC
-
0.0109 0.0141
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
-
2.8
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.0
-
nC
VDS = 15V, VGS = 0V,
f = 1MHz
2
FDS8876 Rev. A
VDD = 15V
ID = 12.5A
Ig = 1.0mA
-
1650
-
pF
-
330
-
pF
-
180
-
pF
0.5
2.3
4.0
Ω
-
28
36
nC
-
15
20
nC
-
1.5
2
nC
-
4.3
-
nC
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
tON
Turn-On Time
-
-
63
td(ON)
Turn-On Delay Time
-
8
-
ns
tr
Rise Time
-
34
-
ns
td(OFF)
Turn-Off Delay Time
-
53
-
ns
tf
Fall Time
-
19
-
ns
tOFF
Turn-Off Time
-
-
108
ns
V
VDD = 15V, ID = 12.5A
VGS = 10V, RGS = 10Ω
ns
Drain-Source Diode Characteristics
ISD = 12.5A
-
-
1.25
ISD = 2.1A
-
-
1.0
V
Reverse Recovery Time
ISD = 12.5A, dISD/dt=100A/µs
-
-
21
ns
Reverse Recovered Charge
ISD = 12.5A, dISD/dt=100A/µs
-
-
10
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 14.5A, VDD = 30V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θJC is guaranteed by design while RθJA is determined by the user’s board design.
3: RθJA is measured with 1.0 in2 copper on FR-4 board
4: FDS8876_NL is lead free product. FDS8876_NL marking will appear on the reel label.
3
FDS8876 Rev. A
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FDS8876 N-Channel PowerTrench® MOSFET
Switching Characteristics (VGS = 10V)
1.2
16
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
12
VGS = 10V
8
VGS = 4.5V
4
0.2
RθJA=50 oC/W
0
0
0
25
50
75
100
125
150
25
50
TA , AMBIENT TEMPERATURE (o C)
75
100
125
150
TA , AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1
0.1
RθJA=50oC/W
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-5
10-4
10 -3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
101
10 2
103
Figure 3. Normalized Maximum Transient Thermal Impedance
1400
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TA = 25oC
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
I = I25
150 - TA
125
VGS = 4.5V
100
10
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t , PULSE WIDTH (s)
Figure 4. Peak Current Capability
4
FDS8876 Rev. A
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FDS8876 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
STARTING TJ = 25o C
STARTING TJ = 150o C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
40
TJ = 25oC
30
20
TJ = 150oC
0
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
2.0
100
3.0
3.5
Figure 6. Transfer Characteristics
Figure 5. Unclamped Inductive Switching
Capability
50
50
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (mΩ)
VGS = 5V
40
VGS = 3.5V
30
VGS = 3V
20
10
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
ID = 12.5A
30
20
10
ID = 1A
0
0
0
0.2
0.4
0.6
VDS , DRAIN TO SOURCE VOLTAGE (V)
2
0.8
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = VDS, ID = 250µA
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
VGS , GATE TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
ID, DRAIN CURRENT (A)
TJ = -55oC
10
1.2
1.0
1.0
0.8
0.6
0.8
VGS = 10V, ID = 12.5A
0.6
0.4
-80
-40
0
40
80
120
160
-80
TJ, JUNCTION TEMPERATURE (oC)
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
5
FDS8876 Rev. A
-40
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted
3000
CISS = CGS + C GD
ID = 250µA
1.05
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.10
1.00
0.95
COSS ≅ CDS + C GD
1000
CRSS = CGD
VGS = 0V, f = 1MHz
0.90
100
-80
-40
0
40
80
120
160
0.1
TJ , JUNCTION TEMPERATURE (o C)
1
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
VGS , GATE TO SOURCE VOLTAGE (V)
10
VDD = 15V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 12.5A
ID = 1A
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
6
FDS8876 Rev. A
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted
BVDSS
VDS
tP
VDS
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
VDS
VDD
RL
Qg(TOT)
VDS
VGS
VGS = 10V
Qg(5)
VGS
+
Qgs2
VGS = 5V
VDD
DUT
VGS = 1V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
+
VGS
VDD
10%
10%
0
DUT
90%
RGS
VGS
VGS
0
Figure 18. Switching Time Test Circuit
10%
50%
PULSE WIDTH
Figure 19. Switching Time Waveforms
7
FDS8876 Rev. A
50%
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FDS8876 N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
maximum transient thermal impedance curve.
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
(T
–T )
JM
A
P
= ------------------------------DM
R θ JA
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2. The area, in square inches is the top copper
area including the gate and source pads.
26
0.23 + Area
R θ JA = 64 + -------------------------------
(EQ. 2)
(EQ. 1)
The transient thermal impedance (ZθJA) is also effected by
varied top copper board area. Figure 22 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
In using surface mount devices such as the SO8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of PDM is complex
and influenced by many factors:
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
Therefore, CTHERM1 through CTHERM5 and RTHERM1
through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
in Table 1.
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
200
5. Air flow and board orientation.
RθJA = 64 + 26/(0.23+Area)
RθJA (o C/W)
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
150
100
50
0.001
0.01
0.1
1
AREA, TOP COPPER AREA (in2)
10
Figure 21. Thermal Resistance vs Mounting
Pad Area
ZθJA, THERMAL
IMPEDANCE (o C/W)
150
COPPER BOARD AREA - DESCENDING ORDER
0.04 in2
0.28 in2
0.52 in2
0.76 in2
1.00 in2
120
90
60
30
0
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
103
Figure 22. Thermal Impedance vs Mounting Pad Area
8
FDS8876 Rev. A
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FDS8876 N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
.SUBCKT FDS8876 2 1 3 ;
Ca 12 8 10.3e-10
Cb 15 14 10.3e-10
Cin 6 8 1.6e-9
rev January 2005
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
LDRAIN
DPLCAP
DRAIN
2
5
10
Ebreak 11 7 17 18 33.7
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
5
51
EVTHRES
+ 19 8
+
LGATE
GATE
1
ESLC
11
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
It 8 17 1
Lgate 1 9 5.29e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.18e-10
RLDRAIN
RSLC1
51
EVTEMP
RGATE + 18 22
9
20
21
EBREAK
16
+
17
18
-
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
RLgate 1 9 52.9
RLdrain 2 5 10
RLsource 3 7 1.8
LSOURCE
CIN
8
7
SOURCE
3
RSOURCE
RLSOURCE
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
14
13
13
8
S1B
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.6e-3
Rgate 9 20 2.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3.8e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
CA
RBREAK
15
17
18
RVTEMP
S2B
13
CB
6
8
EGS
5
8
EDS
-
19
VBAT
+
IT
14
+
+
-
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}
.MODEL DbodyMOD D (IS=2.0E-12 IKF=10 N=1.01 RS=5.6e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=5.7e-10 M=0.52 TT=7e-11 XTI=2)
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5.3e-10 IS=1e-30 N=10 M=0.37)
.MODEL MmedMOD NMOS (VTO=1.9 KP=5 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.3)
.MODEL MstroMOD NMOS (VTO=2.42 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.62 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=23 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=8.0e-3 TC2=1.0e-6)
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=3e-6)
.MODEL RvthresMOD RES (TC1=-2.0e-3 TC2=-6e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-1.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
9
FDS8876 Rev. A
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FDS8876 N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
REV January 2005
template FDS8876 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.0e-12,ikf=10,nl=1.01,rs=5.6e-3,trs1=8e-4,trs2=2e-7,cjo=5.7e-10,m=0.52,tt=7e-11,xti=2)
dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=5.3e-10,isl=10e-30,nl=10,m=0.37)
m..model mmedmod = (type=_n,vto=1.9,kp=5,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.42,kp=150,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.62,kp=0.02,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)
LDRAIN
DPLCAP 5
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)
DRAIN
2
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.5,voff=-1.0) 10
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-1.0,voff=-1.5)
RLDRAIN
RSLC1
c.ca n12 n8 = 10.3e-10
51
c.cb n15 n14 = 10.3e-10
RSLC2
c.cin n6 n8 = 1.6e-9
ISCL
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
spe.ebreak n11 n7 n17 n18 = 33.7
spe.eds n14 n8 n5 n8 = 1
GATE
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
LGATE
EVTEMP
RGATE + 18 22
9
20
21
11
DBODY
16
MWEAK
6
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
8
LSOURCE
7
SOURCE
3
RSOURCE
i.it n8 n17 = 1
RLSOURCE
S1A
l.lgate n1 n9 = 5.29e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 0.18e-9
res.rlgate n1 n9 = 52.9
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 1.8
DBREAK
50
-
12
S2A
13
8
CA
15
14
13
S1B
RBREAK
17
18
RVTEMP
S2B
13
CB
6
8
EGS
-
19
IT
14
+
+
VBAT
5
8
EDS
-
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
+
8
22
RVTHRES
res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7
res.rdrain n50 n16 = 2.6e-3, tc1=8.0e-3,tc2=1.0e-6
res.rgate n9 n20 = 2.3
res.rslc1 n5 n51 = 1e-6, tc1=1e-4,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.8e-3, tc1=1e-3,tc2=3e-6
res.rvthres n22 n8 = 1, tc1=-2.0e-3,tc2=-6e-6
res.rvtemp n18 n19 = 1, tc1=-1.8e-3,tc2=2e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))
}
}
10
FDS8876 Rev. A
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
SABER Electrical Model
JUNCTION
th
REV January 2005
FDS8876
Copper Area =1.0 in2
CTHERM1 TH 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 2e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3
RTHERM1
CTHERM1
8
RTHERM2
RTHERM1 TH 8 1e-1
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
RTHERM3
SABER Thermal Model
RTHERM4
CTHERM2
7
CTHERM3
6
SABER thermal model FDS8876
Copper Area = 1.0 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 =2.0e-3
ctherm.ctherm2 8 7 =5.0e-3
ctherm.ctherm3 7 6 =1.0e-2
ctherm.ctherm4 6 5 =4.0e-2
ctherm.ctherm5 5 4 =9.0e-2
ctherm.ctherm6 4 3 =2e-1
ctherm.ctherm7 3 2 1
ctherm.ctherm8 2 tl 3
CTHERM4
5
RTHERM5
CTHERM5
4
RTHERM6
CTHERM6
3
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25
}
RTHERM7
CTHERM7
2
CTHERM8
RTHERM8
tl
CASE
TABLE 1. THERMAL MODELS
0.04 in2
0.28 in2
0.52 in2
0.76 in2
1.0 in2
CTHERM6
1.2e-1
1.5e-1
2.0e-1
2.0e-1
2.0e-1
CTHERM7
0.5
1.0
1.0
1.0
1.0
CTHERM8
1.3
2.8
3.0
3.0
3.0
RTHERM6
26
20
15
13
12
RTHERM7
39
24
21
19
18
RTHERM8
55
38.7
31.3
29.7
25
COMPONANT
11
FDS8876 Rev. A
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
SPICE Thermal Model
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12
FDS8876 Rev. A
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FDS8876 N-Channel PowerTrench® MOSFET
TRADEMARKS