Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date :2015.09.02 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114YN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114YN3 Equivalent Circuit Outline SOT-23 DTC114YN3 R1=10kΩ , R2=47 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Ordering Information Device DTC114YN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC114YN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date :2015.09.02 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Input Voltage Output Current Symbol Limits Unit VCC VI IO 50 -6~+40 70 100 200 150 -55~+150 V V mA mA mW °C °C IO(max.) Pd Tj Tstg Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Vi(off) Vi(on) Vo(on) Ii Io(off) Gi R1 R2/R1 fT Min. 3 68 7 3.7 - Typ. 0.1 10 4.7 250 Max. 0.3 0.3 0.88 0.5 13 5.7 - Unit V V V mA uA kΩ MHz Test Conditions Vcc=5V, Io=100uA Vo=0.3V, Io=1mA Io/Ii=5mA/0.25mA Vi=5V Vcc=50V, Vi=0V Vo=5V, Io=5mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Recommended Soldering Footprint DTC114YN3 CYStek Product Specification Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date : 2010.07.23 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics DC Current Gain vs Output Current Output Voltage vs Output Current 1000 100 Output Voltage---Vo(on)(mV) Current Gain--- HFE 1000 Vo=5V Io/Ii=20 10 10 1 10 1 100 10 100 Output Current ---Io(mA) Output Current ---Io(mA) Input Voltage vs Output Current (ON Characteristics) Output Current vs Input Voltage (OFF Characteristics) 100 10 Vo=0.3V Output Current --- Io(mA) Input Voltage --- Vi(on)(V) 100 1 Vcc=5V 10 1 0.1 0.1 0.1 1 10 Output Current --- Io(mA) 100 0.1 1 10 Input Voltage --- Vi(off)(V) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 DTC114YN3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date : 2010.07.23 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC114YN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date : 2010.07.23 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC114YN3 CYStek Product Specification Spec. No. : C355N3 Issued Date : 2002.11.04 Revised Date : 2010.07.23 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code 8D Date Code: Year+Month Year: 5→2015, 6→2016 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC114YN3 CYStek Product Specification